Patents by Inventor Eric James Henderson

Eric James Henderson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preparing nanocrystalline germanium in GeOand freestanding germanium nanoparticles
    Patent number: 8585797
    Abstract: Methods for preparing nc-Ge/GeO2 composites by under reductive thermal processing conditions are described. Also described are methods of preparing freestanding nc-Ge via release from the nc-Ge/GeO2 composites.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: November 19, 2013
    Assignee: The Governors of the University of Alberta
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • Methods for preparing silicon germanium alloy nanocrystals
    Patent number: 8366826
    Abstract: The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.
    Type: Grant
    Filed: January 14, 2008
    Date of Patent: February 5, 2013
    Assignee: The Governors of the University of Alberta
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • Method for preparing size-controlled silicon carbide nancrystals
    Patent number: 7906672
    Abstract: The present disclosure relates to a method of preparing silicon carbon nanocrystals (SiC-NCs) in a size-dependent manner by reacting a compound of the Formula I: R1Si(X1)3, with a compound of the Formula II Si(X2)4(II) under conditions for the hydrolysis and condensation of the compound of the Formula I and the compound of the Formula II to form a siloxane polymer comprising repeating units of the Formula III: —[(R1SiO1.5)x(SiO2)y]—, followed by thermal processing of the siloxane polymer under conditions to form SiC-NC's. Optionally the SiC-NC's are liberated to provide free standing SiC-NC's.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: March 15, 2011
    Assignee: The Governors of the University of Alberta
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • Method for Preparing Size-Controlled Silicon Carbide Nancrystals
    Publication number: 20100256408
    Abstract: The present disclosure relates to a method of preparing silicon carbon nanocrystals (SiC-NCs) in a size-dependent manner by reacting a compound of the Formula I: R1Si(X1)3, with a compound of the Formula II Si(X2)4(II) under conditions for the hydrolysis and condensation of the compound of the Formula I and the compound of the Formula II to form a siloxane polymer comprising repeating units of the Formula III: —[(R1SiO1.5)x(SiO2)y]—, followed by thermal processing of the siloxane polymer under conditions to form SiC-NC's. Optionally the SiC-NC's are liberated to provide free standing SiC-NC's.
    Type: Application
    Filed: December 14, 2009
    Publication date: October 7, 2010
    Applicant: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • METHOD FOR PREPARING NANOCRYSTALLINE GERMANIUM IN GEO2 AND FREESTANDING GERMANIUM NANOPARTICLES
    Publication number: 20100193737
    Abstract: Methods for preparing nc-Ge/GeO2 composites by under reductive thermal processing conditions are described. Also described are methods of preparing freestanding nc-Ge via release from the nc-Ge/GeO2 composites.
    Type: Application
    Filed: June 16, 2008
    Publication date: August 5, 2010
    Applicant: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • METHODS FOR PREPARING SILICON GERMANIUM ALLOY NANOCRYSTALS
    Publication number: 20100068114
    Abstract: The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.
    Type: Application
    Filed: January 14, 2008
    Publication date: March 18, 2010
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson