Patents by Inventor Eric James Shero

Eric James Shero has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200056283
    Abstract: Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.
    Type: Application
    Filed: August 13, 2019
    Publication date: February 20, 2020
    Inventors: Eric James Shero, Carl Louis White, Mohith E. Verghese, Kyle Fondurulia, Timothy James Sullivan
  • Publication number: 20200056286
    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
    Type: Application
    Filed: October 10, 2019
    Publication date: February 20, 2020
    Applicant: ASM IP HOLDING, B.V.
    Inventors: Eric James Shero, Mohith E. Verghese, Carl Louis White, Herbert Terhorst, Dan Maurice
  • Patent number: 10529542
    Abstract: Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: January 7, 2020
    Assignee: ASM IP Holdings B.V.
    Inventors: Carl Louis White, Eric James Shero, Mohith Verghese
  • Publication number: 20190390338
    Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.
    Type: Application
    Filed: September 6, 2019
    Publication date: December 26, 2019
    Applicant: ASM IP Holding B.V.
    Inventors: Petri Raisanen, Michael Givens, Eric James Shero
  • Patent number: 10480072
    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: November 19, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Eric James Shero, Mohith E. Verghese, Carl Louis White, Herbert Terhorst, Dan Maurice
  • Patent number: 10458018
    Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: October 29, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Petri Raisanen, Michael Givens, Eric James Shero
  • Publication number: 20190157054
    Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.
    Type: Application
    Filed: January 18, 2019
    Publication date: May 23, 2019
    Inventors: Carl Louis White, Mohith Verghese, Eric James Shero, Todd Robert Dunn
  • Patent number: 10276355
    Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: April 30, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Carl Louis White, Mohith Verghese, Eric James Shero, Todd Robert Dunn
  • Publication number: 20190003052
    Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.
    Type: Application
    Filed: June 28, 2017
    Publication date: January 3, 2019
    Inventors: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
  • Publication number: 20180323056
    Abstract: A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.
    Type: Application
    Filed: May 8, 2017
    Publication date: November 8, 2018
    Inventors: Jacob Huffman Woodruff, Bed Sharma, Eric James Shero
  • Publication number: 20180094351
    Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
    Type: Application
    Filed: May 3, 2017
    Publication date: April 5, 2018
    Inventors: Mohith Verghese, Eric James Shero, Carl Louis White, Kyle Fondurulia, Herbert Terhorst
  • Publication number: 20180094350
    Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
    Type: Application
    Filed: September 30, 2016
    Publication date: April 5, 2018
    Inventors: Mohith Verghese, Eric James Shero, Carl Louis White, Kyle Fondurulia
  • Publication number: 20160376700
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: September 12, 2016
    Publication date: December 29, 2016
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • Publication number: 20160376704
    Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.
    Type: Application
    Filed: June 26, 2015
    Publication date: December 29, 2016
    Inventors: Petri Raisanen, Michael Givens, Eric James Shero
  • Publication number: 20160289828
    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
    Type: Application
    Filed: June 14, 2016
    Publication date: October 6, 2016
    Inventors: Eric James Shero, Mohith E. Verghese, Carl Louis White, Herbert Terhorst, Dan Mourice
  • Publication number: 20160268107
    Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.
    Type: Application
    Filed: March 12, 2015
    Publication date: September 15, 2016
    Inventors: Carl Louis White, Mohith Verghese, Eric James Shero, Todd Robert Dunn
  • Publication number: 20160268102
    Abstract: Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.
    Type: Application
    Filed: March 11, 2015
    Publication date: September 15, 2016
    Inventors: Carl Louis White, Eric James Shero, Mohith Verghese
  • Publication number: 20160115590
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: January 4, 2016
    Publication date: April 28, 2016
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • Patent number: 9228259
    Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: January 5, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • Patent number: 8894870
    Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: November 25, 2014
    Assignee: ASM IP Holding B.V.
    Inventors: Jereld Lee Winkler, Eric James Shero, Fred Alokozai