Patents by Inventor Eric James Shero

Eric James Shero has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160115590
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: January 4, 2016
    Publication date: April 28, 2016
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • Patent number: 9228259
    Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: January 5, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
  • Patent number: 8894870
    Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: November 25, 2014
    Assignee: ASM IP Holding B.V.
    Inventors: Jereld Lee Winkler, Eric James Shero, Fred Alokozai
  • Publication number: 20140217065
    Abstract: A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer.
    Type: Application
    Filed: March 4, 2013
    Publication date: August 7, 2014
    Applicant: ASM IP HOLDING B.V.
    Inventors: Jereld Lee Winkler, Eric James Shero, Fred Alokozai
  • Publication number: 20140220247
    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
    Type: Application
    Filed: January 28, 2014
    Publication date: August 7, 2014
    Applicant: ASM IP Holding B.V.
    Inventors: Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen