Abstract: Embodiments of the present invention relate to a wafer bonding method for heterogenous integration of multiple wafers to a carrier substrate and bonding multiple functional wafers to the substrate to transfer semiconductor thin films. A routing layer for electrical or optical signals is defined on the substrate before a first wafer is bonded to the substrate and is optionally buried with subsequent planarization. Functional ridges are lithographically defined and etched after the first wafer is bonded to the substrate and a thin film is transferred to the substrate. A portion of the wafer surface is then cleared to expose the initial bonding surface on the substrate. A second wafer is bonded to the resulting material by etching pockets in the second functional wafer at the locations of the functional ridges from the first wafer bond.

Abstract: A quantum waveguide infrared photodetector includes: a photon absorption layer that receives infrared photons propagating longitudinally along a longitudinal length of the photon absorption layer, converts the infrared photons into electrons, and communicates the electrons to a conductor layer; a first conductor layer that receives a first electrical potential; and a second conductor layer that receives a second electrical potential, wherein electrons produced by the photon absorption layer are communicated from the photon absorption layer: to the first conductor layer when the first electrical potential is more positive than the second electrical potential, and to the second conductor layer when the second electrical potential is more positive than the first electrical potential, an electrical current produced by the electrons is proportional to an amount of absorption of the infrared photons in the photon absorption layer.

Abstract: A self-referencing nonlinear frequency converting photonic waveguide includes: a supercontinuum input optical taper; a supercontinuum nonlinear optical member that produces supercontinuum light spanning an optical octave with respect to input light; and a supercontinuum output optical taper; a second harmonic input optical taper; a second harmonic nonlinear optical member that receives the supercontinuum light and produces second harmonic light from the supercontinuum light, the second harmonic light including a second harmonic of the supercontinuum light; and a second harmonic output optical taper that receives the second harmonic light, the supercontinuum light, and the input light and co-propagates the second harmonic light, the supercontinuum light, and the input light from the second harmonic generator section as output light.

Abstract: A quantum waveguide infrared photodetector includes: a photon absorption layer that receives infrared photons propagating longitudinally along a longitudinal length of the photon absorption layer, converts the infrared photons into electrons, and communicates the electrons to a conductor layer; a first conductor layer that receives a first electrical potential; and a second conductor layer that receives a second electrical potential, wherein electrons produced by the photon absorption layer are communicated from the photon absorption layer: to the first conductor layer when the first electrical potential is more positive than the second electrical potential, and to the second conductor layer when the second electrical potential is more positive than the first electrical potential, an electrical current produced by the electrons is proportional to an amount of absorption of the infrared photons in the photon absorption layer.