Abstract: Washing a microelectronic substrate with an ozonated solution following planarization and proceeding removal of a native oxide layer through acid etching.

Abstract: A method and apparatus for cleaning a surface of a microelectronic substrate. In one embodiment, the apparatus can include a support member having a manifold in fluid communication with a source of liquid and in fluid communication with at least one exit aperture. A porous brush member can be coupled to the support member such that a contact portion of the brush is positioned against the exit aperture to receive liquid directly from the exit aperture. The liquid can flow from the exit aperture through the contact member and to the surface of the microelectronic substrate to keep the contact portion moist. The contact portion can be moistened as it cleans the microelectronic substrate or between cleaning cycles. The liquid can also be supplied to the contact portion at a rate sufficient to remove particulates and other contaminants from a porous outer surface of the contact portion.

Abstract: A composition prepared from water, hydrofluoric acid (HF) and tetraalkylammonium hydroxide (TAAH, preferably tetramethylammonium hydroxide (TMAH)) or tetraalkylammonium fluoride and solvent with or without HF or TAAH is used to clean residue from a semiconductor wafer, where the residue is formed as a result of a planarization process, such as chemical mechanical polishing. Incorporation of TMAH into an aqueous HF composition retards the rate at which the composition dissolves borophosphosilicate (BPSG) without effecting the rate at which silica is dissolved. Thus, the aqueous HF/TMAH composition may be used to completely remove silica-containing residue from a BPSG surface, with a tolerable level of BPSG removal.

Abstract: A method and apparatus for cleaning a surface of a microelectronic substrate. In one embodiment, the apparatus can include a support member having a manifold in fluid communication with a source of liquid and in fluid communication with at least one exit aperture. A porous brush member can be coupled to the support member such that a contact portion of the brush is positioned against the exit aperture to receive liquid directly from the exit aperture. The liquid can flow from the exit aperture through the contact member and to the surface of the microelectronic substrate to keep the contact portion moist. The contact portion can be moistened as it cleans the microelectronic substrate or between cleaning cycles. The liquid can also be supplied to the contact portion at a rate sufficient to remove particulates and other contaminants from a porous outer surface of the contact portion.

Abstract: A method and apparatus for cleaning a surface of a microelectronic substrate. In one embodiment, the apparatus can include a support member having a manifold in fluid communication with a source of liquid and in fluid communication with at least one exit aperture. A porous brush member can be coupled to the support member such that a contact portion of the brush is positioned against the exit aperture to receive liquid directly from the exit aperture. The liquid can flow from the exit aperture through the contact member and to the surface of the microelectronic substrate to keep the contact portion moist. The contact portion can be moistened as it cleans the microelectronic substrate or between cleaning cycles. The liquid can also be supplied to the contact portion at a rate sufficient to remove particulates and other contaminants from a porous outer surface of the contact portion.

Abstract: Washing a microelectronic substrate with an ozonated solution following planarization and proceeding removal of a native oxide layer through acid etching.

Abstract: A composition prepared from water, hydrofluoric acid (HF) and tetraalkylammonium hydroxide (TAAH, preferably tetramethylammonium hydroxide (TMAH)) or tetraalkylammonium fluoride and solvent with or without HF or TAAH is used to clean residue from a semiconductor wafer, where the residue is formed as a result of a planarization process, such as chemical mechanical polishing. Incorporation of TMAH into an aqueous HF composition retards the rate at which the composition dissolves borophosphosilicate (BPSG) without effecting the rate at which silica is dissolved. Thus, the aqueous HF/TMAH composition may be used to completely remove silica-containing residue from a BPSG surface, with a tolerable level of BPSG removal.

Abstract: A composition prepared from water, hydrofluoric acid (HF) and tetraalkylammonium hydroxide (TAAH, preferably tetramethylammonium hydroxide (TMAH)) or tetraalkylammonium fluoride and solvent with or without HF or TAAH is used to clean residue from a semiconductor wafer, where the residue is formed as a result of a planarization process, such as chemical mechanical polishing. Incorporation of TMAH into an aqueous HF composition retards the rate at which the composition dissolves borophosphosilicate (BPSG) without effecting the rate at which silica is dissolved. Thus, the aqueous HF/TMAH composition may be used to completely remove silica-containing residue from a BPSG surface, with a tolerable level of BPSG removal.