Patents by Inventor Eric Kihara Shono
Eric Kihara Shono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11959169Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: GrantFiled: September 30, 2022Date of Patent: April 16, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Kartik Shah, Hansel Lo, Tobin Kaufman-Osborn, Rene George, Lara Hawrylchak, Erika Hansen
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Patent number: 11885021Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.Type: GrantFiled: May 11, 2021Date of Patent: January 30, 2024Assignee: Applied Materials, Inc.Inventors: Kartik Shah, Vishwas Kumar Pandey, Kailash Pradhan, Sairaju Tallavarjula, Rene George, Eric Kihara Shono, Philip A. Bottini, Roger Curtis
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Publication number: 20230407471Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: ApplicationFiled: June 2, 2023Publication date: December 21, 2023Inventors: Vishwas Kumar PANDEY, Eric Kihara SHONO, Kartik SHAH, Christopher S. OLSEN, Agus Sofian TJANDRA, Tobin KAUFMAN-OSBORN, Taewan KIM, Hansel LO
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Patent number: 11732355Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: GrantFiled: October 24, 2019Date of Patent: August 22, 2023Assignee: Applied Materials, Inc.Inventors: Vishwas Kumar Pandey, Eric Kihara Shono, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Tobin Kaufman-Osborn, Taewan Kim, Hansel Lo
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Patent number: 11697875Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: GrantFiled: October 24, 2019Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Vishwas Kumar Pandey, Eric Kihara Shono, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Tobin Kaufman-Osborn, Taewan Kim, Hansel Lo
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Patent number: 11634813Abstract: Embodiments of the present disclosure provide apparatuses for improving gas distribution during thermal processing. In one or more embodiments, an apparatus includes a body, an angled gas source assembly, and a gas injection channel. The gas injection channel has a first half-angle and a second half-angle. The first half-angle is different from the second half-angle. The use of an improved side gas assembly in a processing chamber to direct gas from the center toward the edge of the substrate advantageously controls growth uniformity throughout the substrate. Surprisingly, directing gas through a gas channel with non-uniform half-angles will significantly increase the reaction at or near the edge of the substrate, thereby leading to an improved overall thickness uniformity of the substrate.Type: GrantFiled: November 30, 2021Date of Patent: April 25, 2023Assignee: APPLIED MATERIALS, INC.Inventor: Eric Kihara Shono
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Patent number: 11615944Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly located in a first side of a chamber body and two pumping ports located in a substrate support portion adjacent a second side of the chamber body opposite the first side. The liner assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the process chamber. The liner assembly may be fabricated from quartz minimize interaction with process gases, such as radicals. The liner assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. The two pumping ports can be individually controlled to tune the flow of the radicals through the processing region of the process chamber.Type: GrantFiled: March 27, 2018Date of Patent: March 28, 2023Assignee: Applied Materials, Inc.Inventors: Christopher S. Olsen, Eric Kihara Shono, Lara Hawrylchak, Agus Sofian Tjandra, Chaitanya A. Prasad, Sairaju Tallavarjula
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Publication number: 20230028054Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: ApplicationFiled: September 30, 2022Publication date: January 26, 2023Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Christopher S. OLSEN, Kartik SHAH, Hansel LO, Tobin KAUFMAN-OSBORN, Rene GEORGE, Lara HAWRYLCHAK, Erika HANSEN
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Patent number: 11529592Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.Type: GrantFiled: July 1, 2021Date of Patent: December 20, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Vishwas Kumar Pandey, Lara Hawrylchak, Eric Kihara Shono, Kartik Shah, Christopher S. Olsen, Sairaju Tallavarjula, Kailash Pradhan, Rene George, Johanes F. Swenberg, Stephen Moffatt
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Patent number: 11501954Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: GrantFiled: May 19, 2021Date of Patent: November 15, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Vishwas Kumar Pandey, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Hansel Lo, Eric Kihara Shono, Hemantha Raju
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Patent number: 11501945Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.Type: GrantFiled: November 23, 2020Date of Patent: November 15, 2022Assignee: Applied Materials, Inc.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn
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Patent number: 11486038Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: GrantFiled: January 29, 2020Date of Patent: November 1, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Kartik Shah, Hansel Lo, Tobin Kaufman-Osborn, Rene George, Lara Hawrylchak, Erika Hansen
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Publication number: 20220223383Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly that in one embodiment includes a body including a first opening and a second opening opposing the first opening, wherein the opening comprises a first end and a second end opposing the first end, and a flow valve disposed between the first opening and the second opening, the flow valve coupled to the body by a rotatable shaft that provides movement of the flow valve in angles between about 0 degrees and about 90 degrees relative to a central axis of the processing chamber.Type: ApplicationFiled: March 13, 2020Publication date: July 14, 2022Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Hansel LO, Christopher S. OLSEN, Tobin KAUFMAN-OSBORN, Tobin MAN-OSBORN, Rene GEORGE, Lara HAWRYLCHAK
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Publication number: 20220165547Abstract: Provided herein is a gas source comprising a flow conduit having an interior volume and an open end, a remote plasma source fluidly coupled to the flow conduit, a secondary gas source extending inwardly of the interior volume of the flow conduit, the secondary gas source including at least one gas port therein positioned to flow a secondary gas inwardly of the interior volume of the flow conduit.Type: ApplicationFiled: November 24, 2020Publication date: May 26, 2022Inventors: Vishwas Kumar PANDEY, Eric Kihara SHONO, Christopher S. OLSEN, Tobin KAUFMAN-OSBORN, Erika HANSEN, Rene GEORGE, Lara HAWRYLCHAK, Hansel LO, Kartik Bhupendra SHAH
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Publication number: 20220081767Abstract: Embodiments of the present disclosure provide apparatuses for improving gas distribution during thermal processing. In one or more embodiments, an apparatus includes a body, an angled gas source assembly, and a gas injection channel. The gas injection channel has a first half-angle and a second half-angle. The first half-angle is different from the second half-angle. The use of an improved side gas assembly in a processing chamber to direct gas from the center toward the edge of the substrate advantageously controls growth uniformity throughout the substrate. Surprisingly, directing gas through a gas channel with non-uniform half-angles will significantly increase the reaction at or near the edge of the substrate, thereby leading to an improved overall thickness uniformity of the substrate.Type: ApplicationFiled: November 30, 2021Publication date: March 17, 2022Inventor: Eric Kihara SHONO
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Patent number: 11220746Abstract: Embodiments of the present disclosure provide apparatuses for improving gas distribution during thermal processing. In one or more embodiments, an apparatus includes a body, an angled gas source assembly, and a gas injection channel. The gas injection channel has a first half-angle and a second half-angle. The first half-angle is different from the second half-angle. The use of an improved side gas assembly in a processing chamber to direct gas from the center toward the edge of the substrate advantageously controls growth uniformity throughout the substrate. Surprisingly, directing gas through a gas channel with non-uniform half-angles will significantly increase the reaction at or near the edge of the substrate, thereby leading to an improved overall thickness uniformity of the substrate.Type: GrantFiled: August 24, 2020Date of Patent: January 11, 2022Assignee: APPLIED MATERIALS, INC.Inventor: Eric Kihara Shono
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Publication number: 20210322934Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.Type: ApplicationFiled: July 1, 2021Publication date: October 21, 2021Inventors: Vishwas Kumar PANDEY, Lara HAWRYLCHAK, Eric Kihara SHONO, Kartik SHAH, Christopher S. OLSEN, Sairaju TALLAVARJULA, Kailash PRADHAN, Rene GEORGE, Johanes F. SWENBERG, Stephen MOFFATT
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Patent number: 11124878Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.Type: GrantFiled: July 30, 2018Date of Patent: September 21, 2021Assignee: Applied Materials, Inc.Inventors: Kartik Shah, Vishwas Kumar Pandey, Kailash Pradhan, Sairaju Tallavarjula, Rene George, Eric Kihara Shono, Philip A. Bottini, Roger Curtis
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Publication number: 20210272776Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: ApplicationFiled: May 19, 2021Publication date: September 2, 2021Inventors: Vishwas Kumar PANDEY, Kartik Bhupendra SHAH, Christopher S. OLSEN, Agus Sofian TJANDRA, Hansel LO, Eric Kihara SHONO, Hemantha RAJU
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Patent number: D1023987Type: GrantFiled: June 7, 2021Date of Patent: April 23, 2024Assignee: Applied Materials, Inc.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn