Abstract: In a data processing system, a command stream provided to a processing resource to cause the processing resource to perform a processing task for an application executing on a host processor comprises a sequence of commands for execution by the processing resource to cause the processing resource to perform the processing operations for the processing task and one or more data save indicators that indicate data that is to be saved. In response to the processing resource receiving a request to suspend processing of the processing task, data indicated by one of the one or more data save indicators in the command stream is stored in memory.

Abstract: Aspects of the present disclosure relate to apparatus comprising execution circuitry comprising at least one execution unit to execute program instructions, and control circuitry. The control circuitry receives a stream of processing instructions, and issues each received instruction to one of said at least one execution unit. Responsive to determining that a first type of context switch is to be performed from an initial context to a new context, issuing continues until a pre-emption point in the stream of processing instructions is reached. Responsive to reaching the pre-emption point, state information is stored, and the new context is switched to. Responsive to determining that a context switch is to be performed to return from the new context to the initial context, the processing status is restored from the state information, and the stream of processing instructions is continued.

Abstract: A processor arranged to compress neural network activation data comprising an input module for obtaining neural network activation data. The processor also comprises a block creation module arranged to split the neural network activation data into a plurality of blocks; and a metadata generation module for generating metadata associated with at least one of the plurality of blocks. Based on the metadata generated a selection module selects a compression scheme for each of the plurality of blocks, and a compression module for applying the selected compression scheme to the corresponding block to produce compressed neural network activation data. An output module is also provided for outputting the compressed neural network activation data.

Abstract: The present disclosure advantageously provides a heterogenous system, and a method for generating an artificial neural network (ANN) for a heterogenous system. The heterogenous system includes a plurality of processing units coupled to a memory configured to store an input volume. The plurality of processing units includes first and second processing units. The first processing unit includes a first processor and is configured to execute a first ANN, and the second processing unit includes a second processor and is configured to execute a second ANN. The first and second ANNs respectively include an input layer, at least one processor-optimized hidden layer and an output layer. The second ANN hidden layers are different than the first ANN hidden layers.

Abstract: A display controller 93 in a data processing system includes a timewarp module (transformation circuitry) 100 that is operable to perform timewarp processing of a rendered frame 92 generated by a graphics processor (GPU) 91 for provision to a display panel 94. The timewarp module (transformation circuitry) 100 operates to transform an input surface 92 read by the display controller 93 based on received view orientation data to provide an appropriately “timewarped” transformed version of the input surface as an output transformed surface for display on the display 94.

Abstract: The present disclosure advantageously provides a heterogenous system, and a method for generating an artificial neural network (ANN) for a heterogenous system. The heterogenous system includes a plurality of processing units coupled to a memory configured to store an input volume. The plurality of processing units includes first and second processing units. The first processing unit includes a first processor and is configured to execute a first ANN, and the second processing unit includes a second processor and is configured to execute a second ANN. The first and second ANNs respectively include an input layer, at least one processor-optimized hidden layer and an output layer. The second ANN hidden layers are different than the first ANN hidden layers.

Abstract: A display controller 93 in a data processing system includes a timewarp module (transformation circuitry) 100 that is operable to perform timewarp processing of a rendered frame 92 generated by a graphics processor (GPU) 91 for provision to a display panel 94. The timewarp module (transformation circuitry) 100 operates to transform an input surface 92 read by the display controller 93 based on received view orientation data to provide an appropriately “timewarped” transformed version of the input surface as an output transformed surface for display on the display 94.

Abstract: An electrostatic discharge (ESD) protection circuit includes a substrate having a semiconductor surface that the ESD protection circuit formed thereon. A first ESD cell is stacked in series with at least a second ESD cell. An active shunt transistor is electrically in parallel with the first ESD cell or second ESD cell, where the active shunt includes a control node. A trigger circuit has a trigger input and a trigger output, wherein the trigger output is coupled to the control node.

Abstract: An integrated circuit may include an over-capability detection circuit coupled to an I/O pad which provides a shut-off signal to a latch controlling an ESD protection shunting component. The ESD protection shunting component is coupled between the I/O pad and a reference node of the integrated circuit. The over-capability detection circuit provides the shut-off signal when safe operating conditions are resumed after a voltage excursion at the I/O pad. After receiving the shut-off signal, the latch biases the ESD protection shunting component into an off-state.

Abstract: An ESD monitor device may take the form of an integrated circuit with a plurality of monitor components available at each I/O site of the ESD monitor device. Each monitor component has a physical structure which provides scalable ESD robustness. The monitor components are connected in parallel to an ESD bus. An integrated circuit may be formed by processing an ESD monitor device through one or more process steps of an integrated circuit manufacturing line, and subsequently measuring the ESD monitor device. Parameters of a process step of the manufacturing line may be adjusted to reduce ESD events at the process step, based on measurement results from the ESD monitor device. The integrated circuit may subsequently be processed through the adjusted process step.

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 5A) for an integrated circuit is disclosed. The integrated circuit includes a first ESD cell having a current path coupled between a first terminal and a second terminal. A second ESD cell has a current path coupled between the second terminal and a power supply terminal. A passive circuit is connected in parallel with one of the first and second ESD cells.

Abstract: An electrostatic discharge (ESD) protection circuit includes a substrate having a semiconductor surface that the ESD protection circuit formed thereon. A first ESD cell is stacked in series with at least a second ESD cell. An active shunt transistor is electrically in parallel with the first ESD cell or second ESD cell, where the active shunt includes a control node. A trigger circuit has a trigger input and a trigger output, wherein the trigger output is coupled to the control node.

Abstract: An integrated circuit with either a normally open MEMS ESD protection switch coupled between a bond pad and an internal circuit or a normally closed MEMS ESD protection switch coupled between the bond pad and a common reference of the integrated circuit. At least one of a control bond pad and an enable logic circuit is coupled to a control terminal of the MEMS ESD protection switch.

Abstract: An integrated circuit may include an over-capability detection circuit coupled to an I/O pad which provides a shut-off signal to a latch controlling an ESD protection shunting component. The ESD protection shunting component is coupled between the I/O pad and a reference node of the integrated circuit. The over-capability detection circuit provides the shut-off signal when safe operating conditions are resumed after a voltage excursion at the I/O pad. After receiving the shut-off signal, the latch biases the ESD protection shunting component into an off-state.

Abstract: Adapters for electrostatic discharge probe tips are disclosed herein. An embodiment of the adapter includes an attachment device that is attachable to the tip of the probe. A first conductor is affixed to the attachment device so that the first conductor contacts the tip when the attachment device is attached to the tip of the probe. A second conductor extends between the first electrical conductor and a point external to the attachment device.

Abstract: An integrated circuit may include an over-capability detection circuit coupled to an I/O pad which provides a shut-off signal to a latch controlling an ESD protection shunting component. The ESD protection shunting component is coupled between the I/O pad and a reference node of the integrated circuit. The over-capability detection circuit provides the shut-off signal when safe operating conditions are resumed after a voltage excursion at the I/O pad. After receiving the shut-off signal, the latch biases the ESD protection shunting component into an off-state.

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 5A) for an integrated circuit is disclosed. The integrated circuit includes a first ESD cell having a current path coupled between a first terminal and a second terminal. A second ESD cell has a current path coupled between the second terminal and a power supply terminal. A passive circuit is connected in parallel with one of the first and second ESD cells.

Abstract: An integrated circuit may include an over-capability detection circuit coupled to an I/O pad which provides a shut-off signal to a latch controlling an ESD protection shunting component. The ESD protection shunting component is coupled between the I/O pad and a reference node of the integrated circuit. The over-capability detection circuit provides the shut-off signal when safe operating conditions are resumed after a voltage excursion at the I/O pad. After receiving the shut-off signal, the latch biases the ESD protection shunting component into an off-state.

Abstract: An ESD monitor device may take the form of an integrated circuit with a plurality of monitor components available at each I/O site of the ESD monitor device. Each monitor component has a physical structure which provides scalable ESD robustness. The monitor components are connected in parallel to an ESD bus. An integrated circuit may be formed by processing an ESD monitor device through one or more process steps of an integrated circuit manufacturing line, and subsequently measuring the ESD monitor device. Parameters of a process step of the manufacturing line may be adjusted to reduce ESD events at the process step, based on measurement results from the ESD monitor device. The integrated circuit may subsequently be processed through the adjusted process step.

Abstract: An apparatus comprises a first PFET including a first intrinsic body diode; an electrostatic discharge (ESD) subcircuit coupled to a source of the first PFET; a reverse bias voltage element, such as a zener diode, an anode of which is coupled to a gate of the first PFET; a second PFET having a source coupled to a cathode of the zener diode a capacitor coupled to a gate the second PFET; and a first resistor coupled to the gate of the second PFET. The apparatus can protect against both positive and negative electro static transient discharge events.