Abstract: An example apparatus includes a non-volatile memory including a first memory having a first write rate and a second memory having a second write rate, the first write rate greater than the second write rate An example controller is to determine, based on a ratio, a first portion of the data to be written to the first memory, and a second portion of the data to be written to the second memory type, the second portion of the data not included in the first portion of the data.

Abstract: In one example, an apparatus may include a first tray cover portion substantially parallel to a first plane, a second tray cover portion coupleable to the first tray cover portion at a first end of the first tray cover portion, and a third tray cover portion coupleable to the first tray cover portion at a second end of the first tray cover portion. The second tray cover portion and the third tray cover portion may be substantially parallel to a second plane, and the first plane and the second plane may be substantially orthogonal to one another.

Abstract: An example apparatus includes a non-volatile memory including a first memory having a first write rate and a second memory having a second write rate, the first write rate greater than the second write rate An example controller is to determine, based on a ratio, a first portion of the data to be written to the first memory, and a second portion of the data to be written to the second memory type, the second portion of the data not included in the first portion of the data.

Abstract: An example apparatus includes a non-volatile memory including a first memory having a first write rate and a second memory having a second write rate, the first write rate greater than the second write rate An example controller is to determine, based on a ratio, a first portion of the data to be written to the first memory, and a second portion of the data to be written to the second memory type, the second portion of the data not included in the first portion of the data.

Abstract: Provided are a method and apparatus for remapping logical to physical addresses for a non-volatile memory having dies. Bands extend through the dies and planes in the dies extending through the bands define addressable blocks. A first remapping of a logical-to-physical mapping is performed by remapping logical addresses of blocks in a first end of the bands that map to defective physical blocks to map to good physical blocks at a second end of the bands. After performing the first remapping, a second remapping of the logical-to-physical mapping is performed by remapping logical addresses in the second end of bands that map to defective blocks to map to good physical blocks in the first end of bands.

Abstract: An example apparatus includes a non-volatile memory including a first memory having a first write rate and a second memory having a second write rate, the first write rate greater than the second write rate An example controller is to determine, based on a ratio, a first portion of the data to be written to the first memory, and a second portion of the data to be written to the second memory type, the second portion of the data not included in the first portion of the data.

Abstract: Provided are a method and apparatus for remapping logical to physical addresses for a non-volatile memory having dies. Bands extend through the dies and planes in the dies extending through the bands define addressable blocks. A first remapping of a logical-to-physical mapping is performed by remapping logical addresses of blocks in a first end of the bands that map to defective physical blocks to map to good physical blocks at a second end of the bands. After performing the first remapping, a second remapping of the logical-to-physical mapping is performed by remapping logical addresses in the second end of bands that map to defective blocks to map to good physical blocks in the first end of bands.

Abstract: A page data (e.g., upper page data) received from a host is stored in a transfer buffer of a controller of a solid state drive. Another page data (e.g., lower page data) is read from a non-volatile memory (e.g., a NAND memory) to store in the transfer buffer as an error corrected page data. The error corrected page data and the page data are written to the non-volatile memory. In additional embodiments, a controller loads a page data (e.g., upper page data) received from the host in one or more NAND page buffers. The controller reads another page data (e.g., lower page data) from a NAND memory to store in a transfer buffer as an error corrected page data. The error corrected page data stored in the transfer buffer is loaded to the one or more NAND page buffers.

Abstract: A page data (e.g., upper page data) received from a host is stored in a transfer buffer of a controller of a solid state drive. Another page data (e.g., lower page data) is read from a non-volatile memory (e.g., a NAND memory) to store in the transfer buffer as an error corrected page data. The error corrected page data and the page data are written to the non-volatile memory. In additional embodiments, a controller loads a page data (e.g., upper page data) received from the host in one or more NAND page buffers. The controller reads another page data (e.g., lower page data) from a NAND memory to store in a transfer buffer as an error corrected page data. The error corrected page data stored in the transfer buffer is loaded to the one or more NAND page buffers.