Abstract: A resistor (14) and a resistive link (1,15) are provided in an integrated circuit structure, and a dielectric layer (30-2) is formed over the resistive link. The resistor and the resistive link are connected in parallel. The resistance of the resistor is trimmed by forming a cut entirely through the resistive link, by advancing a laser beam (3) through a trim region (4,4-1) of the resistive link in a direction at an angle in the range of approximately 0 to 60 degrees relative to a longitudinal axis of the resistive link so as to melt resistive link material. The advancing laser beam tends to sweep the melted material in the direction of beam movement. Re-solidified link debris accumulates sufficiently far apart and sufficiently far from a stub (15A) of the resistive link to prevent significant leakage current in the resistive link.

Abstract: A method and structure for controlling the surface properties in the dielectric layers in a thin film component can be provided for improving the trimming process of thin film element. A metal fill is configured with a uniform fill pattern beneath an array of thin film resistors, and can comprise a plurality of smaller features or peaks providing a finer fill pattern that improves the control of the topology of the dielectric layers. The fill pattern can be configured in various manners, such as fill patterns parallel to the thin film resistor, fill patterns perpendicular to the thin film resistor, or fill patterns comprising a checkerboard-like configuration.

Abstract: A method and structure for controlling the surface properties in the dielectric layers in a thin film component can be provided for improving the trimming process of thin film element. A metal fill is configured with a uniform fill pattern beneath an array of thin film resistors, and can comprise a plurality of smaller features or peaks providing a finer fill pattern that improves the control of the topology of the dielectric layers. The fill pattern can be configured in various manners, such as fill patterns parallel to the thin film resistor, fill patterns perpendicular to the thin film resistor, or fill patterns comprising a checkerboard-like configuration.

Abstract: A method and structure for controlling the surface properties in the dielectric layers in a thin film component can be provided for improving the trimming process of thin film element. A metal fill is configured with a uniform fill pattern beneath an array of thin film resistors, and can comprise a plurality of smaller features or peaks providing a finer fill pattern that improves the control of the topology of the dielectric layers. The fill pattern can be configured in various manners, such as fill patterns parallel to the thin film resistor, fill patterns perpendicular to the thin film resistor, or fill patterns comprising a checkerboard-like configuration.