Abstract: A spectrometer apparatus for measuring spectra of a liquid sample, such as a beverage like wine. The apparatus has an integrating cavity with a reflective inner wall to receive a cuvette containing the liquid sample within the integrating cavity. A combination of light inlet ports and light outlet ports are provided to receive light from at least one light source and deliver light to a spectrometer. A light path adjuster is configured to selectively adjust a light path through the integrating cavity so at least two distinct light paths are provided wherein when the light path adjuster is in a first configuration, the apparatus is in transmission mode in which light from the light source follows a first light path; when the light path adjuster is in a second configuration, the apparatus is in a diffusely reflecting mode in which light from the light source follows a second light path.

Abstract: A spectrometer apparatus (1) is provided for measuring spectra of a liquid sample, such as a beverage such as wine. The apparatus (1) comprises an integrating cavity (3) comprising a reflective inner wall or walls (5), configured to receive a cuvette (7) containing the liquid sample within the integrating cavity (5). A combination of light inlet ports P1, P2 and light outlet ports P3, P4 are provided to receive light from at least one light source (9) and to deliver light to a spectrometer (11).

Abstract: A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas extending there through. The spacer layer then forms a template upon which quantum dots of an active layer may be formed with a surface with a surface density and formation that is influenced by the underlying first layer of quantum dots. This allows a choice of growth parameters more favourable to the formation of quantum dots in the active layer emitting at long wavelengths with a narrow inhomogeneous broadening. As an example, the active layer of quantum dots may be formed at a lower temperature than the first layer of quantum dots.