Abstract: Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a chemical head. The chemical head including multiple first return conduits formed from a first flat region in a head surface and multiple second return conduits formed from a second flat region in the head surface. The second flat region being disposed immediately adjacent to the first flat region and the second flat region being in a plane substantially parallel to and offset from the first flat region. At least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface and the first angle being greater than about 20 degrees to a meniscus plane normal.

Abstract: A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

Abstract: A method for meniscus processing a substrate is provided. The method initiates with generating a meniscus spanning at least a length of the substrate. A pre-wetting liquid or vapor is dispensed. A substrate is moved through the dispensed pre-wetting liquid or vapor and the meniscus. The dispensed pre-wetting vapor condenses a pre-wetting liquid over a region of the substrate adjacent to a region of the substrate where the meniscus is generated. The pre-wetting liquid is deposited without substantially generating surface flow of the pre-wetting liquid on the substrate, and the pre-wetting liquid prevents the leading edge of the meniscus from contacting a dry surface region of the substrate.

Abstract: A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode.

Abstract: A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

Abstract: Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a first and a second chemical head that are disposed to cover at least a portion of a top and an underside surface of the semiconductor wafer. Each of the first and the second chemical heads include an angled inlet conduit at a leading edge of the respective chemical heads to deliver liquid chemistry into a pocket of meniscus in a single phase. The pocket of meniscus is defined over the portion of the top and underside surface of the semiconductor wafer covered by the chemical heads and is configured to receive and contain the liquid chemistry applied to the surface of the semiconductor wafer as a meniscus. A step is formed at a leading edge of the first and second chemical heads along an outer periphery of the pocket of meniscus to substantially confine the meniscus of the liquid chemistry within the pocket of meniscus.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.

Abstract: A plasma processing system is provided. The plasma processing system includes a radio frequency (RF) power generator configured to have a tunable frequency power output, the frequency output being adjustable within a range. A processing chamber having a bottom electrode and a top electrode is included. A plasma region being defined between the bottom and top electrodes and the processing chamber receives RF power from the RF power generator. A match network is coupled between the RF power generator and the processing chamber. The match network has a first tunable element and a second tunable element. The first tunable element adjusts a split between a first grounding pathway defined within an inner region of the plasma region and a second grounding pathway defined within an outer region of the plasma region. The second tunable element adjusts a load delivered to the processing chamber from the power generator.

Abstract: Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a chemical head. The chemical head including multiple first return conduits formed from a first flat region in a head surface and multiple second return conduits formed from a second flat region in the head surface. The second flat region being disposed immediately adjacent to the first flat region and the second flat region being in a plane substantially parallel to and offset from the first flat region. At least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface and the first angle being greater than about 20 degrees to a meniscus plane normal.

Abstract: Systems, methods and apparatus for making a chemical head including forming a first return chamber in the chemical head, forming a second return chamber in the chemical head, forming a plurality of first return conduits from a head surface to the first return chamber, forming a plurality of second return conduits from a head surface to the second return chamber and wherein at least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface, the first angle being greater than about 20 degrees to a meniscus plane normal.

Abstract: A carrier for supporting a substrate during processing by a meniscus fowled by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.

Abstract: Systems, apparatus and methods are provided for efficiently reclaiming solvents used to clean surfaces of semiconductor wafers, etc. More particularly, embodiments of the present invention provide a reclaim approach that prevents the evaporation of chemical solvents used to process wafers using proximity heads, by confining hot liquid solvents used to form fluid menisci on the wafer surface with cold liquid solvents of the same chemical composition.

Abstract: A method for meniscus processing a substrate is provided. The method initiates with generating a meniscus spanning at least a length of the substrate. A pre-wetting liquid or vapor is dispensed. A substrate is moved through the dispensed pre-wetting liquid or vapor and the meniscus. The dispensed pre-wetting vapor condenses a pre-wetting liquid over a region of the substrate adjacent to a region of the substrate where the meniscus is generated. The pre-wetting liquid is deposited without substantially generating surface flow of the pre-wetting liquid on the substrate, and the pre-wetting liquid prevents the leading edge of the meniscus from contacting a dry surface region of the substrate.

Abstract: A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

Abstract: Apparatuses and methods for drying a surface of a substrate includes a proximity drying head having a head body that includes a process surface configured to be disposed opposite a surface of a substrate when present. The process surface includes a first region, a second region and a third region. The first region is defined at a leading edge of the head body and includes a cavity region that is recessed into the head body. The cavity region includes a plurality of inlet ports that are used to introduce a vapor fluid to the cavity region. The second region is disposed proximate to the surface of the substrate when present and is located beside the first region. The third region is disposed proximate to the surface of the substrate when present and is located beside the second region. A plurality of vacuum ports is defined at the interface of the second region and the third region. The third region includes a plurality of angled inlet ports that are directed toward the second region.

Abstract: Systems, methods and apparatus for making a chemical head including forming a first return chamber in the chemical head, forming a second return chamber in the chemical head, forming a plurality of first return conduits from a head surface to the first return chamber, forming a plurality of second return conduits from a head surface to the second return chamber and wherein at least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface, the first angle being greater than about 20 degrees to a meniscus plane normal.

Abstract: A carrier for supporting a substrate during processing by a meniscus fowled by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.

Abstract: A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.

Abstract: A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.

Abstract: An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.