Abstract: A slider having a slider body is provided. An electrical connection is coupled to the slider body. A first actuator is coupled to the electrical connection and adapted to displace a first portion of the slider body. Additionally, a second actuator is coupled to the electrical connection and adapted to displace a second portion of the slider body.

Abstract: A slider having a slider body is provided. An electrical connection is coupled to the slider body. A first actuator is coupled to the electrical connection and adapted to displace a first portion of the slider body. Additionally, a second actuator is coupled to the electrical connection and adapted to displace a second portion of the slider body.

Abstract: A slider having a slider body is provided. An electrical connection is coupled to the slider body. A first actuator is coupled to the electrical connection and adapted to displace a first portion of the slider body. Additionally, a second heater is coupled to the electrical connection and adapted to displace a second portion of the slider body.

Abstract: A magnetic tunneling junction device has a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunnel barrier layer made of gallium oxide. The insulating tunneling barrier layer is deposited by RF sputtering of gallium oxide. The magnetic tunneling junction device has a resistance area product less than 7 ?·?m2.

Abstract: The invention includes a magnetic recording head that has at least one structure or substructure that is made of a semiconductor material that protects the head from damage or destruction arising from stray current flow or unwanted electrostatic discharge during manufacture, assembly or use. The semiconductor material acts as a dissipative pathway to drain unwanted charges from the structure. The invention also includes a magnetic recording head that includes a substrate and a reader portion in the substrate, the substrate comprising a semiconductor material.

Abstract: A magnetic recording head system is protected against electrostatic discharge (ESD) and electrical overstress (EOS). The system includes a transducing read element and a drive circuit for connection to operate the transducing read element. A microelectromechanical switch has an input to receive an electrical control signal that selectively switches between a first state for protecting the transducing read element and a second state for operating the transducing read element.

Abstract: This invention discloses a circuit including a magnetoresistive sensor and a tunnel junction device coupled to the MR sensor to dissipate the energy associated with an electrical signal exceeding operational voltages for the sensor. The tunnel junction can include a first conducting layer, a second conducting layer, and a barrier material positioned between the first and the second conducting layer. The barrier material can be positioned so that the first conducting layer and the second conducting layer do not make contact. The MR sensor can be connected in parallel to the first and second conducting layer. The tunnel junction can be made of a material with a resistance more than the MR sensor's resistance at operational voltages and a resistance below the MR sensor's resistance at larger voltages.

Abstract: A magnetoresistive head assembly of the present invention includes a magnetoresistive sensor and an electrostatic discharge and electrical overstress protection circuit. The magnetoresistive is capable of having conducted therethrough oppositely-directed first direction current and second direction current. The magnetoresistive sensor is sensitive to first direction currents in excess of a first predetermined value and to second direction currents in excess of a second predetermined value different than the first predetermined value. The electrostatic discharge and electrical overstress protection circuit is electrically connected to the magnetoresistive sensor for preventing only those first direction currents greater than the first predetermined value from flowing though the magnetoresistive sensor and only those second direction currents greater than the second predetermined value from flowing through the magnetoresistive sensor.