Abstract: Structures for a photodetector and methods of forming a structure for a photodetector. The structure includes a semiconductor layer having a p-n junction and a deep trench isolation region extending through the semiconductor layer. The deep trench isolation region includes first layers and second layers that alternate with the first layers to define a Bragg mirror. The first layers contain a first material having a first refractive index, and the second layers contain a second material having a second refractive index that is greater than the first refractive index.

Abstract: Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor layer having a first well and a second well defining a p-n junction with the first well, and an interlayer dielectric layer on the semiconductor layer. A deep trench isolation region includes a conductor layer and a dielectric liner. The conductor layer penetrates through the semiconductor layer and the interlayer dielectric layer. The conductor layer has a first end, a second end, and a sidewall that connects the first end to the second end. The dielectric liner is arranged to surround the sidewall of the conductor layer. A metal feature is connected to the first end of the conductor layer.

Abstract: Structures for a photodetector and methods of forming a structure for a photodetector. The structure includes a semiconductor layer having a p-n junction and a deep trench isolation region extending through the semiconductor layer. The deep trench isolation region includes first layers and second layers that alternate with the first layers to define a Bragg mirror. The first layers contain a first material having a first refractive index, and the second layers contain a second material having a second refractive index that is greater than the first refractive index.

Abstract: Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor layer having a first well and a second well defining a p-n junction with the first well, and an interlayer dielectric layer on the semiconductor layer. A deep trench isolation region includes a conductor layer and a dielectric liner. The conductor layer penetrates through the semiconductor layer and the interlayer dielectric layer. The conductor layer has a first end, a second end, and a sidewall that connects the first end to the second end. The dielectric liner is arranged to surround the sidewall of the conductor layer. A metal feature is connected to the first end of the conductor layer.