Abstract: Systems and techniques that detect and correct failure of data storage and communication operations, including obtaining a first plurality of values, selecting a first plurality of error correction values to generate a first codeword, wherein the first codeword is associated with a plurality of syndrome values that encode a second subset of the first plurality of values, and causing a first processing device or a second processing device to restore the first plurality of values based on the first codeword.

Abstract: The memory banks of a memory device are arranged and operated in groups and the groups are further arranged and operated as clusters of these groups. Successive accesses to banks that are within different bank group clusters may be issued at a first time interval. Successive accesses to banks that are within different bank groups within the same cluster can be issued no faster than a second time interval. And, successive accesses to banks that are within the same bank group may be issued no faster than a third time interval. The memory banks of a memory device may have multiple rows open at the same time. The rows that can be open at the same time is determined by the rows that are already open. These memory banks are also arranged and operated in groups that have three different minimum time intervals.

Abstract: First data is read out of a core storage array of a memory component over a first time interval constrained by data output bandwidth of the core storage array. After read out from the core storage array, the first data is output from the memory component over a second time interval that is shorter than the first time interval and that corresponds to a data transfer bandwidth greater than the data output bandwidth of the core storage array.

Abstract: When writing a block (e.g., cache line) of data to a memory, error detection and correction (EDC) information (check) symbols are calculated. The block of data, a first portion of the check symbols, and metadata are all written concurrently at a first address. The remaining portion of the check symbols are written at a second, different from the first, address. When reading the block of data, a first read command accesses the block of data, the first portion of the check symbols, and the metadata from the first address. Only the first portion of the check symbols is used to determine a first number of errors (if any) in the accessed data. If the first number of errors meets a threshold number of errors, a second read command is issued to access the second portion of the check symbols.

Abstract: A dynamic random access memory (DRAM) component (e.g., module or integrated circuit) can be configured to have multiple rows in the same bank open concurrently. The controller of the component divides the address space of the banks into segments based on row address ranges. These row address ranges do not necessarily correspond to row address ranges of the bank's subarrays (a.k.a. memory array tiles—MATs). When a command is sent to open a row, the controller marks a plurality of the segments as blocked. The controller thereby tracks address ranges in a bank where it will not open a second row unless and until the first row is closed. The memory component may store information about which, and how many, segments should be blocked in response to opening a row. This information may be read by the controller during initialization.

Abstract: A system and method of operation in a dynamic random access memory (DRAM) device. The method includes receiving, by the DRAM device from a controller, a refresh type flag indicating a refresh procedure for refreshing one or more rows of a memory cell array of the DRAM device. The method includes storing the refresh type flag in refresh control circuitry of the DRAM device. The method includes performing the row refresh of the DRAM device according to the refresh type flag stored in the refresh control circuitry.

Abstract: A memory system supports single- and dual-memory-module configurations, both supporting point-to-point communication between a host (e.g., a memory controller) and the memory module or modules. Each memory module includes an address-buffer component, data-buffer components, and two sets of memory dies, each set termed a “timing rank,” that can be accessed independently. The one memory module is configured in a wide mode for the single-memory-module configuration, in which case both timing ranks work together, as a “package rank,” to communicate full-width data. Each of two memory modules are configured in a narrow mode for the dual-memory-module configuration, in which case one timing rank from each memory module communicates data in parallel to appear to the host as single package ranks. The data-buffer components support separate and configurable write and read delays for the different timing ranks on each module to provide read and write leveling within and between memory modules.

Abstract: Data and error correction information may involve accessing multiple data channels (e.g., 8) and one error detection and correction channel concurrently. This technique requires a total of N+1 row requests for each access, where N is the number of data channels (e.g., 8 data row accesses and 1 error detection and correction row access equals 9 row accesses.) A single (or at least less than N) data channel row may be accessed concurrently with a single error detection and correction row. This reduces the number of row requests to two (2)—one for the data and one for the error detection and correction information. Because, row requests consume power, reducing the number of row requests is more power efficient.

Abstract: A buffer integrated circuit (IC) chip is disclosed. The buffer IC chip includes host interface circuitry to receive a request from at least one host. The request includes at least one command to access a memory. Memory interface circuitry couples to the memory. Message authentication circuitry performs a verification operation on the received request. Selective containment circuitry, during a containment mode of operation, (1) inhibits changes to the memory in response to the at least one command until completion of the verification operation, and (2) during performance of the verification operation, carries out at least one non-memory modifying sub-operation associated with the at least one command.

Abstract: During system initialization, each data buffer device and/or memory device on a memory module is configured with a unique (at least to the module) device identification number. In order to access a single device (rather than multiple buffers and/or memory devices), a target identification number is written to all of the devices using a command bus connected to all of the data buffer devices or memory devices, respectively. The devices whose respective device identification numbers do not match the target identification number are configured to ignore future command bus transactions (at least until the debug mode is turned off.) The selected device that is configured with a device identification number matching the target identification number is configured to respond to command bus transactions.

Abstract: Technologies for configurable adaptive double device data correction (ADDDC) are described. A memory buffer device includes error detection and correction (EDC) logic to autonomously detect errors in a region of memory and, upon detection of an error, calculate additional ECC check symbols for cache lines in the region and store the additional ECC check symbols as metadata associated with the cache lines.

Abstract: The embodiments are directed to technologies for variable pitch vertical interconnect design for scalable escape routing in semiconductor devices. One semiconductor device includes a circuit die, and an array of circuit die interconnects located on the circuit die. The array includes a first triangular octant of interconnects that are organized in rows and columns, each column incrementing its number of interconnects from a first side of the first triangular octant to a second side of the first triangular octant. A pitch size between the columns increases in a first repeating pattern from the first side to the second side.

Abstract: The memory banks of a memory device are arranged and operated in groups and the groups are further arranged and operated as clusters of these groups. Successive accesses to banks that are within different bank group clusters may be issued at a first time interval. Successive accesses to banks that are within different bank groups within the same cluster can be issued no faster than a second time interval. And, successive accesses to banks that are within the same bank group may be issued no faster than a third time interval. The memory banks of a memory device may have multiple rows open at the same time. The rows that can be open at the same time is determined by the rows that are already open. These memory banks are also arranged and operated in groups that have three different minimum time intervals.

Abstract: First data is read out of a core storage array of a memory component over a first time interval constrained by data output bandwidth of the core storage array. After read out from the core storage array, the first data is output from the memory component over a second time interval that is shorter than the first time interval and that corresponds to a data transfer bandwidth greater than the data output bandwidth of the core storage array.

Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.

Abstract: A memory device includes functionality (e.g., mode, command, etc.) to concurrently activate/access a plurality of rows across a corresponding plurality of memory banks. When concurrently accessing the memory banks, the row address and column address are provided to all of the memory banks being accessed. Multiplexer/demultiplexer (e.g., steering logic) may be used to route non-payload (e.g., metadata) from the concurrently activated memory banks to/from the data interface of the memory device. The steering logic may route and/or serialize the metadata from the concurrently activated memory banks of the bank group such that the non-payload data from a respective memory bank is communicated via the same data signal(s) (e.g., DQ[0], DQ[1], etc.) of the data interface.

Abstract: A memory module includes cache of relatively fast and durable dynamic, random-access memory (DRAM) in service of a larger amount of relatively slow and wear-sensitive non-volatile memory. Local controller manages communication between the DRAM cache and non-volatile memory to accommodate disparate access granularities, reduce the requisite number of memory transactions, and minimize the flow of data external to nonvolatile memory components.

Abstract: A memory system supports single- and dual-memory-module configurations, both supporting point-to-point communication between a host (e.g., a memory controller) and the memory module or modules. Each memory module includes an address-buffer component, data-buffer components, and two sets of memory dies, each set termed a “timing rank,” that can be accessed independently. The one memory module is configured in a wide mode for the single-memory-module configuration, in which case both timing ranks work together, as a “package rank,” to communicate full-width data. Each of two memory modules are configured in a narrow mode for the dual-memory-module configuration, in which case one timing rank from each memory module communicates data in parallel to appear to the host as single package ranks. The data-buffer components support separate and configurable write and read delays for the different timing ranks on each module to provide read and write leveling within and between memory modules.

Abstract: A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.

Abstract: A compute system includes an execution unit (e.g. of a CPU) with a memory controller providing access to a hybrid physical memory. The physical memory is “hybrid” in that it combines a cache of relatively fast, durable, and expensive memory (e.g. DRAM) with a larger amount of relatively slow, wear-sensitive, and inexpensive memory (e.g. flash). A hybrid controller component services memory commands from the memory controller component and additionally manages cache fetch and evict operations that keep the cache populated with instructions and data that have a high degree of locality of reference. The memory controller alerts the hybrid controller of available access slots to the cache so that the hybrid controller can use the available access slots for cache fetch and evict operations with minimal interference to the memory controller.