Abstract: Some embodiments include a protective cover for a mobile display device including a housing, a backplane, a liner, and a lip. The housing includes an outer portion and an inner portion, where the outer portion of the housing has a rectangular frame structure to provide a protective shell along an outer edge of the mobile display device, and where the inner portion receives and secures the mobile display device. The backplane is comprised of a rigid material and is coupled to a backside of the housing and provides a protective shell along a back side of the mobile display device. The liner has a corrugated soft rubber or polymer construction including a successive pattern of protrusions separated by a distance and is coupled to the inner portion of the housing. The lip is coupled to a front side of the housing to retain the mobile display device within the housing.

Abstract: Embodiments of the present disclosure generally provide a method and apparatus for forming an IGZO active layer within a thin film transistor (TFT) device. In one embodiment, a method is provided for forming an IGZO active layer on a dielectric surface using a PECVD deposition process. In one embodiment, a method is provided for pretreating and passivating the dielectric surface for receiving the PECVD formed IGZO layer. In another embodiment, a method is provided for treating a PECVD formed IGZO layer after depositing said layer. In another embodiment, a method is provided for forming a multi-layer or complex layering structure of IGZO, within a PECVD processing chamber, for optimizing TFT electrical characteristics such as carrier density, contact resistance, and gate dielectric interfacial properties. In yet another embodiment, a method is provided for forming integrated layers for a TFT including IGZO within an in-situ environment of a cluster tool.

Abstract: Some embodiments include a protective cover for a mobile display device including a housing, a backplane, a liner, and a lip. The housing includes an outer portion and an inner portion, where the outer portion of the housing has a rectangular frame structure to provide a protective shell along an outer edge of the mobile display device, and where the inner portion receives and secures the mobile display device. The backplane is comprised of a rigid material and is coupled to a backside of the housing and provides a protective shell along a back side of the mobile display device. The liner has a corrugated soft rubber or polymer construction including a successive pattern of protrusions separated by a distance and is coupled to the inner portion of the housing. The lip is coupled to a front side of the housing to retain the mobile display device within the housing.

Abstract: Embodiments of the present disclosure generally provide a method and apparatus for forming an IGZO active layer within a thin film transistor (TFT) device. In one embodiment, a method is provided for forming an IGZO active layer on a dielectric surface using a PECVD deposition process. In one embodiment, a method is provided for pretreating and passivating the dielectric surface for receiving the PECVD formed IGZO layer. In another embodiment, a method is provided for treating a PECVD formed IGZO layer after depositing said layer. In another embodiment, a method is provided for forming a multi-layer or complex layering structure of IGZO, within a PECVD processing chamber, for optimizing TFT electrical characteristics such as carrier density, contact resistance, and gate dielectric interfacial properties. In yet another embodiment, a method is provided for forming integrated layers for a TFT including IGZO within an in-situ environment of a cluster tool.