Abstract: A method for the continuous vacuum cleaning of a substrate, characterized in that: a species is chosen that has a low sputtering efficiency and is chemically active with regard to the soiling matter; using at least one linear ion source, a plasma is generated from a gas mixture comprising predominantly the species having a low sputtering efficiency, especially one based on oxygen; and at least one surface portion of the substrate is subjected to the plasma so that said ionized species at least partly eliminates, by chemical reaction, the soiling matter possibly adsorbed or located on the surface portion.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam is crystallized.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam has a refractive index that can be adjusted according to the parameters of the ion source, said ion source being a linear source.

Abstract: Vacuum deposition process for depositing at least one thin film on a surface portion of a substrate, characterized in that: at least one sputtering species that is chemically inactive or active with respect to a material to be sputtered is selected; a collimated beam of ions comprising predominantly said sputtering species is generated using at least one linear ion source positioned within an installation of industrial size; said beam is directed onto at least one target based on the material to be sputtered; and at least one surface portion of said substrate is positioned so as to face said target in such a way that said material sputtered by the ion bombardment of the target or a material resulting from the reaction of said sputtered material with at least one of the sputtering species is deposited on said surface portion.

Abstract: Method for the continuous vacuum cleaning of a substrate, characterized in that: a species is chosen that has a low sputtering efficiency and is chemically active with regard to the soiling matter; using at least one linear ion source, a plasma is generated from a gas mixture comprising predominantly the species having a low sputtering efficiency, especially one based on oxygen; and at least one surface portion of said substrate is subjected to said plasma so that said ionized species at least partly eliminates, by chemical reaction, the soiling matter possibly adsorbed or located on said surface portion.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam is crystallized.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam has a refractive index that can be adjusted according to the parameters of the ion source, said ion source being a linear source.