Patents by Inventor Eric Michael Gitlin

Eric Michael Gitlin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
    Patent number: 11313049
    Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: April 26, 2022
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin
  • CRYSTAL PULLING SYSTEM AND METHODS FOR PRODUCING MONOCRYSTALLINE INGOTS WITH REDUCED EDGE BAND DEFECTS
    Publication number: 20210340691
    Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.
    Type: Application
    Filed: July 16, 2021
    Publication date: November 4, 2021
    Inventors: Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin
  • Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
    Patent number: 11072870
    Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: July 27, 2021
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin
  • CRYSTAL PULLING SYSTEMS AND METHODS FOR PRODUCING MONOCRYSTALLINE INGOTS WITH REDUCED EDGE BAND DEFECTS
    Publication number: 20190136408
    Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.
    Type: Application
    Filed: December 31, 2018
    Publication date: May 9, 2019
    Inventors: Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin
  • CRYSTAL PULLING SYSTEMS AND METHODS FOR PRODUCING MONOCRYSTALLINE INGOTS WITH REDUCED EDGE BAND DEFECTS
    Publication number: 20170107639
    Abstract: A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.
    Type: Application
    Filed: October 19, 2016
    Publication date: April 20, 2017
    Inventors: Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin