Abstract: A memory cell apparatus is provided. The apparatus comprises two or more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic characteristic and a first electrical characteristic and a second MTJ having a second magnetic characteristic and a second electrical characteristic. The first magnetic characteristic is distinct from the second magnetic characteristic. The apparatus further comprises a transistor having three terminals, where the first MTJ is coupled to a first terminal of the three terminals and a metallic separator coupling the first MTJ with the second MTJ. The first MTJ and the second MTJ are arranged in series.

Abstract: The various implementations described herein include methods, devices, and systems for fabricating magnetic memory devices. In one aspect, a method of fabricating a magnetic memory device includes: (1) providing a dielectric substrate with a metallic core protruding from the dielectric substrate, where: (a) a first portion of the metallic core is surrounded by the dielectric substrate and a second portion of the metallic core protrudes away from a surface of the dielectric substrate; and (b) the second portion includes: (i) a surface offset from the surface of the dielectric substrate and (ii) sidewalls extending away from the surface of the dielectric substrate to the offset surface; (2) depositing a first ferromagnetic layer on exposed surfaces of the metallic core and the dielectric substrate; (3) depositing a spacer layer on exposed surfaces of the first ferromagnetic layer; and (4) depositing a second ferromagnetic layer on exposed surfaces of the spacer layer.

Abstract: A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a first cylindrical ferromagnetic layer that surrounds the cylindrical core, (iii) a spacer layer that surrounds the first cylindrical ferromagnetic layer, and (iv) a second cylindrical ferromagnetic layer that surrounds the spacer layer. The cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction.

Abstract: A method for selectively writing to STT-MRAM using an AC current is provided. The method is performed in a memory device including two or more multilevel magnetic tunnel junctions (MTJs) arranged in series with respect to a single terminal of a transistor, where the two or more multilevel MTJs include a first MTJ having a first magnetic characteristic and first electrical characteristic and a second MTJ having a second magnetic characteristic that is distinct from the first magnetic characteristic and a second electrical characteristic. The method includes writing to an MTJ. The writing includes applying a DC current to the two or more MTJs and applying an AC current to the two or more MTJs, where the AC current is adjusted to a frequency that is tuned to a write assist frequency corresponding to the respective MTJ.

Abstract: The various implementations described herein include methods, devices, and systems for operating magnetic memory devices. In one aspect, a magnetic memory device includes: (1) a core; (2) a plurality of layers that surround the core in succession; (3) a first input terminal coupled to the core and configured to receive a first current, where: (a) the first current flows radially from the core through the plurality of layers; and (b) the radial flow of the first current imparts a torque on, at least, a magnetization of an inner layer of the plurality of layers; and (4) a second input terminal coupled to the core and configured to receive a second current, where: (i) the second current imparts a Spin Hall Effect (SHE) around a perimeter of the core; and (ii) the SHE contributes to the torque imparted on the magnetization of the inner layer by the first current.

Abstract: A magnetic storage device is provided. The magnetic storage device comprises a magnetic memory cell, which includes two or more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic characteristic and a first electrical characteristic and a second MTJ has a second magnetic characteristic and a second electrical characteristic, wherein the first magnetic characteristic is distinct from the second magnetic characteristic. The magnetic memory cell further comprises a bottom electrode and a top electrode, wherein the two or more MTJs are arranged between the top and bottom electrode in parallel with respect to each other. The magnetic storage device further comprises readout circuitry coupled to the bottom electrode or the top electrode of the magnetic memory cell and write circuitry coupled to the bottom electrode or the top electrode of the magnetic memory cell.

Abstract: A magnetic device, according to one approach, includes: a plurality of perpendicular magnetic tunnel junction (p-MTJ) cells, each p-MTJ cell having a transistor and a magnetic tunnel junction (MTJ) sensor. Moreover, each of the transistors includes a drain terminal, a source terminal, and a gate terminal. The magnetic device also includes: a first common word line coupled to the gate terminal of each transistor in a first subset of the plurality of p-MTJ cells, a first common bit line coupled to a first end of each MTJ sensor in a second subset of the plurality of p-MTJ cells, and a first common source line coupled to the drain terminal of each transistor in the first subset. A second end of each of the MTJ sensors in the second subset is coupled to the source terminal of each respective transistor in the second subset.

Abstract: The various implementations described herein include methods, devices, and systems for operating magnetic memory devices. In one aspect, a magnetic memory device includes: (1) a core; (2) a plurality of layers that surround the core in succession; (3) a first input terminal coupled to the core and configured to receive a first current, where: (a) the first current flows radially from the core through the plurality of layers; and (b) the radial flow of the first current imparts a torque on, at least, a magnetization of an inner layer of the plurality of layers; and (4) a second input terminal coupled to the core and configured to receive a second current, where: (i) the second current imparts a Spin Hall Effect (SHE) around a perimeter of the core; and (ii) the SHE contributes to the torque imparted on the magnetization of the inner layer by the first current.

Abstract: Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a STNO, an in-plane polarization magnetic layer, and a perpendicular MTJ.

Abstract: Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has plurality of magnetic tunnel junction (MTJ) stack having significantly improved performance of the free layers in the MTJ structures. The MRAM device utilizes a spin torque nano-oscillator (STNO), a metallic bit line and a plurality of orthogonal spin transfer magnetic tunnel junctions (OST-MTJs), each OST-MTJ comprising an in-plane polarizer, and a perpendicular MTJ.

Abstract: Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device also utilizes a three-terminal structure, thereby allowing efficient writing of the bit without a concomitant increase in read disturb.

Abstract: A Magnetic Random Access Memory (MRAM) structure having a thermally conductive, dielectric cladding material that contacts an outer side of a magnetic memory element. The magnetic memory element can be a magnetic tunnel junction element formed as a cylindrical pillar that extends between first and second electrically conductive lead layers. The cylinder of the magnetic memory element can have an outer periphery, and the cladding material can be formed to contact the entire periphery. In addition, a heat sink structure formed of a dielectric material having a high specific heat capacity can be formed to contact an outer periphery of the cladding material. The cladding material and heat sink structure efficiently conduct heat away from the sides of the memory element to prevent the temperature of the memory element to rise to unsafe levels. This advantageously assists in maintaining a high reliability and long life of the MRAM system.