Abstract: A system operates solid-state storage memory. The system determines that a portion of the solid-state storage memory is of a type that has a failure mode of threshold voltage shift over time from successive reads at time intervals. The system alters or turns off a background process that performs such successive reads to check for memory reliability, for at least the portion of the solid-state storage memory. Or, the system uses the portion of solid-state storage memory for data bits, not parity bits.

Abstract: A method of tracking flash memory in a storage system is provided. The method includes initializing a bad blocks threshold value and marking one or more planes or logical unit numbers (LUNs) of flash memory as bad, responsive to determining that bad blocks in the one or more planes or LUNs meet the bad blocks threshold value. The method includes adjusting the bad blocks threshold value, responsive to exceeding a threshold number or rate of retiring planes or LUNs of flash memory, and repeating the marking and the adjusting, with the bad blocks threshold value capped at a maximum threshold value.