Abstract: An x-ray source can include a housing with material with an atomic number of ?42 and a thermal conductivity of ?3 W/(m*K) to assist in removing heat from the x-ray source and to block x-rays emitted in undesirable directions. An x-ray source can include a shell that is electrically conductive and that encloses at least part of a voltage multiplier without enclosing a control circuit to minimize or eliminate electromagnetic interference in the control circuitry caused by the voltage multiplier. An x-ray source can include a negative voltage multiplier, a positive voltage multiplier, and a ground plane between the negative voltage multiplier and the positive voltage multiplier. The ground plane can minimize or eliminate electromagnetic interference between the negative voltage multiplier and the positive voltage multiplier. An air-filled channel, associated with the ground plane, can reduce weight of the x-ray source.

Abstract: A method of making a semiconductor device includes forming a gate stack on a substrate. The method further includes depositing a first spacer layer on a sidewall of the gate stack. The first spacer layer includes silicon and carbon. The method includes performing a first nitrogen plasma treatment process on the first spacer layer to increase a density of the first spacer layer. The method further includes depositing a second spacer layer on the first spacer layer. The second spacer layer includes silicon, carbon, and nitrogen.

Abstract: In order to reduce the amount of electrical insulation needed for voltage isolation of large voltages generated by a voltage multiplier, the voltage multiplier can be shaped to smooth out electric field gradients. The voltage multiplier can comprise multiple sections, each section located in a different plane. The voltage multiplier can comprise a negative voltage multiplier and a positive voltage multiplier, each inclined at different angles with respect to each other. The voltage multiplier can include a curved shape.

Abstract: A selection is made between single stage and multistage parachute deployment for a vehicle based at least in part on vehicle state information. In the event multistage parachute deployment is selected, a drogue parachute is deployed during a first deployment stage and afterwards, a main parachute is deployed during a second deployment stage. In the event single stage parachute deployment is selected, at least the main parachute is deployed in a single stage where in the event the drogue parachute is deployed during the single stage, the drogue and main parachute are deployed simultaneously.

Abstract: An apparatus may include a center section of a tower. The apparatus may further include at least a first support and a second support each comprising a telescoping assembly, wherein the telescoping assembly may include two or more members longitudinally moveable relative to one another for moving the center section of the tower between at least a first position and a second position.

Abstract: In an embodiment, a system to deploy a plurality of parachutes includes a plurality of parachute canopies each packed in a canister, a plurality of rockets adapted to extract an associated canopy from the canister, and a controller. The controller is configured to determine that an aircraft is at least one of: in a hover mode of operation and a forward flight mode of operation. In response to the determination that the aircraft is in the hover mode of operation, the controller applies a hover deployment sequence including by instructing the plurality of parachutes to deploy substantially simultaneously. In response to the determination that the aircraft is in the forward mode of operation and above a threshold airspeed, the controller applies a forward deployment sequence including by instructing the plurality of parachutes to deploy in a predefined sequence.

Abstract: Techniques for fin length variability control are provided. In one aspect, a method of patterning fins in a wafer includes: depositing a hardmask and a tone invert layer on the wafer; patterning trenches in the tone invert layer; forming inverse tone etch masks on the hardmask within the trenches, wherein the inverse tone etch masks include inner and outer inverse tone etch masks; forming a save mask with opposite ends thereof aligned with the outer inverse tone etch masks; using the save mask to selectively remove unmasked portions of the tone invert layer; removing the outer inverse tone etch masks, wherein the inner inverse tone etch masks that remain have a uniform length L; patterning the hardmask into individual fin hardmasks using the inner inverse tone etch masks; and patterning fins in the wafer using the fin hardmasks. A device having fins of a uniform length L is also provided.

Abstract: A blender system that includes a base that is selectively and operatively engaged with a container is shown and described herein. The base may include a near field communications chip that may communicate with a near field communications chip of a container. The base also includes a motor that is selectively and operatively engaged with a blade disposed within the container.

Abstract: Electron beam spot characteristics can be tuned in each x-ray tube by moving a focusing-ring along a longitudinal-axis of the x-ray tube. The focusing-ring can then be immovably fastened to the x-ray tube. An x-ray source can include an x-ray tube and a focusing-ring. The focusing-ring can at least partially encircle an electron-emitter, a cathode, an evacuated-enclosure, or combinations thereof. The focusing-ring can be located outside of a vacuum of the evacuated enclosure. The focusing-ring can adjust an electron-beam spot on a target material of the x-ray tube when moved along a longitudinal-axis extending linearly from the electron-emitter to the target material.

Abstract: An electrostatic dissipation device 10 can comprise an elongated enclosure 11 with a longitudinal axis 12. An x-ray source 13 can be oriented to emit x-rays 16 inside of and along the longitudinal axis 12. A fluid-flow device 14 can be oriented to cause fluid to flow across the x-ray source 13 then inside of and along the longitudinal axis 12, the fluid being ionized by the x-rays 16, forming ionized fluid, then out of the elongated enclosure through outlet opening(s) 15. The arrangement of the x-ray source 13 and the fluid-flow device 14 can allow (1) fluid from the fluid-flow device 14 to cool the x-ray source 13, and (2) ion generation along the length of the elongated enclosure 11.

Abstract: A gantry system for processing an aircraft includes a gantry receiving a fuselage of the aircraft having a gantry frame with an arched member. The gantry system includes first and second locating arms extending between inner and outer ends movably coupled to the gantry frame. The gantry system includes a bracket assembly having a first locating arm bracket pivotably coupled to the first locating arm, a second locating arm bracket pivotably coupled to the second locating arm, and a head assembly bracket with a head assembly coupled thereto having an end effector for processing the fuselage. The head assembly is variably positionable by the first and second locating arms moving along the gantry frame for positioning the end effector relative to the fuselage.

Abstract: Techniques for fin length variability control are provided. In one aspect, a method of patterning fins in a wafer includes: depositing a hardmask and a tone invert layer on the wafer; patterning trenches in the tone invert layer; forming inverse tone etch masks on the hardmask within the trenches, wherein the inverse tone etch masks include inner and outer inverse tone etch masks; forming a save mask with opposite ends thereof aligned with the outer inverse tone etch masks; using the save mask to selectively remove unmasked portions of the tone invert layer; removing the outer inverse tone etch masks, wherein the inner inverse tone etch masks that remain have a uniform length L; patterning the hardmask into individual fin hardmasks using the inner inverse tone etch masks; and patterning fins in the wafer using the fin hardmasks. A device having fins of a uniform length L is also provided.

Abstract: A finned semiconductor structure including sets of relatively wide and relatively narrow fins is obtained by employing hard masks having different quality. A relatively porous hard mask is formed over a first region of a semiconductor substrate and a relatively dense hard mask is formed over a second region of the substrate. Patterning of the different hard masks using a sidewall image transfer process causes greater lateral etching of the relatively porous hard mask than the relatively dense hard mask. A subsequent reactive ion etch to form semiconductor fins causes relatively narrow fins to be formed beneath the relatively porous hard mask and relatively wide fins to be formed beneath the relatively dense hard mask.

Abstract: In order to reduce the amount of electrical insulation needed for voltage isolation of large voltages generated by a voltage multiplier, the voltage multiplier can be shaped to smooth out electric field gradients. The voltage multiplier can comprise multiple sections, each section located in a different plane. The voltage multiplier can comprise a negative voltage multiplier and a positive voltage multiplier, each inclined at different angles with respect to each other. The voltage multiplier can include a curved shape.

Abstract: A shield around an x-ray tube, a voltage multiplier, or both can improve the manufacturing process by allowing testing earlier in the process and by providing a holder for liquid potting material. The shield can also improve voltage standoff. A shielded x-ray tube can be electrically coupled to a shielded power supply.

Abstract: In an embodiment, a system to deploy a plurality of parachutes includes a plurality of parachute canopies each packed in a canister, a plurality of rockets adapted to extract an associated canopy from the canister, and a controller. The controller is configured to determine that an aircraft is at least one of: in a hover mode of operation and a forward flight mode of operation. In response to the determination that the aircraft is in the hover mode of operation, the controller applies a hover deployment sequence including by instructing the plurality of parachutes to deploy substantially simultaneously. In response to the determination that the aircraft is in the forward mode of operation and above a threshold airspeed, the controller applies a forward deployment sequence including by instructing the plurality of parachutes to deploy in a predefined sequence.

Abstract: A transmission-target x-ray tube can include an x-ray window mounted on a window-housing. The window-housing can be made of a high density material (e.g. ?12 g/cm3) with a high atomic number (e.g. ?45), and can include an aperture with an increasing-inner-diameter region, with a smaller diameter closer to the electron-emitter and a larger diameter closer to the window-mount, for blocking x-rays and electrons. An example angle in the increasing-inner-diameter region is between 15 degrees and 35 degrees. The x-ray tube can further comprise a window-cap. The x-ray window can be sandwiched between the window-housing and the window-cap. The window-cap can be made of a high density material (e.g. ?12 g/cm3) with a high atomic number (e.g. ?45) for blocking x-rays in undesirable directions, and can include an aperture for allowing x-rays to transmit in desirable directions.

Abstract: A blender system that includes a base that is selectively and operatively engaged with a container is shown and described herein. The base may include a near field communications chip that may communicate with a near field communications chip of a container. The base also includes a motor that is selectively and operatively engaged with a blade disposed within the container.

Abstract: An x-ray tube can include an electron-emitter, which can include a tube-shape with a minimum inside diameter of at least 0.5 millimeters. The electron-emitter can provide field-emission of electrons, and thus can avoid the electrical power required for heating, and can avoid degradation due to high temperature of, a thermionic-emission electron-emitter. This type of electron-emitter, with a tube-shape, can have a relatively large electron-emission region, allowing high electrical current without excessive current density.

Abstract: Methods and devices for forming multiple fin lengths includes forming a material stack on vertical fins. A plurality of mandrels are formed on the material stack. Spacers are formed along the plurality of mandrels with the spacers width being a length of short fins. One or more of the plurality of mandrels are removed. The material stack is patterned to form the short fins beneath the spacers and long fins. The vertical fins are cut with the pattern of the material stack to form the short fins and the long fins.