Abstract: One embodiment relates to an apparatus for generating a dual-energy electron beam. A first electron beam source is configured to generate a lower-energy electron beam, and a second electron beam source is configured to generate a higher-energy electron beam. A holey mirror is biased to reflect the lower-energy electron beam. The holey mirror also includes an opening therein through which passes the higher-energy electron beam, thereby forming the dual-energy electron beam. A prism array combiner introduces a first dispersion between the lower-energy electron beam and the higher-energy electron beam within the dual-energy electron beam. A prism array separator is configured to separate the dual-energy electron beam traveling to a substrate from a scattered electron beam traveling away from the substrate. The prism array separator introduces a second dispersion which compensates for the dispersion of the prism array combiner. Other embodiments are also disclosed.

Abstract: One embodiment disclosed relates to a Wien filter for a charged-particle beam apparatus. The charged-particle beam is transmitted through the Wien filter in a first direction. A magnetic field generation mechanism is configured to generate a magnetic field in a second direction which is perpendicular to the first direction, and an electrostatic field generation mechanism is configured to generate an electrostatic field in a third direction which is perpendicular to the first and second directions. The field generation mechanisms are further configured so as to have an offset between the positions of the magnetic and electrostatic fields along the first direction. Another embodiment disclosed relates to a Wien filter type device wherein the magnetic force is approximately twice in strength compared to the electrostatic force. Other embodiments are also disclosed.

Abstract: One embodiment disclosed relates to a scanning electron beam apparatus including an objective lens, scan deflectors, de-scan deflectors, an energy-filter drift tube, and a segmented detector. The objective lens may be an immersion lens configured with a high extraction field so as to preserve azimuthal angle discrimination of the electrons scattered from the specimen surface. The de-scan deflectors may be used to compensate for the scanning of the incident electron beam. The energy-filter drift tube is configured to align the scattered electrons according to polar angles of trajectory from the specimen surface.

Abstract: One embodiment disclosed relates to a scanning electron beam apparatus including an objective lens, scan deflectors, de-scan deflectors, an energy-filter drift tube, and a segmented detector. The objective lens may be an immersion lens configured with a high extraction field so as to preserve azimuthal angle discrimination of the electrons scattered from the specimen surface. The de-scan deflectors may be used to compensate for the scanning of the incident electron beam. The energy-filter drift tube is configured to align the scattered electrons according to polar angles of trajectory from the specimen surface.

Abstract: An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL™ electron patterning tool.

Abstract: An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL™ electron patterning tool.

Abstract: A compact magnetic energy filter having at least four magnetic fields to deflect the trajectory of an electron beam from the entrance window to the exit slit. A rotational symmetry axis is located midway between the second and third magnetic fields. The magnetic fields on the opposite sides of the rotational symmetry axis are opposite in polarity.

Abstract: An apparatus and method of focusing including a source for producing an electron beam, a mask and a projection column, through which the electron beam passes, and a wafer on which the electron beam is to be focused. The wafer is located in a plane where spherical aberrations of the projection column reduce the negative defocusing effect caused by chromatic aberrations in the projection column. The apparatus and method are applicable to general electron patterning tools, electron patterning tools where a thickness of the mask is smaller than an electron mean free path of the electron patterning tool, and the SCALPEL™ electron patterning tool.

Abstract: An apparatus for projection lithography is disclosed. The apparatus has at least one magnetic doublet lens. An aperture scatter filter is interposed between the two lenses of the magnetic doublet lens. The aperture scatter filter is in the back focal plane of the magnetic doublet lens system, or in an equivalent conjugate plane thereof. The apparatus also has two magnetic clamps interposed between the two lenses in the magnetic doublet lens. The clamps are positioned and configured to prevent substantial overlap of the magnetic lens fields. The magnetic clamps are positioned so that the magnetic fields from the lenses in the magnetic doublet lens do not extend to the aperture scatter filter.

Abstract: A method and apparatus for a charged particle scanning system and an automatic inspection system, including wafers and masks used in microcircuit fabrication. A charged particle beam is directed at the surface of a substrate for scanning that substrate and a selection of detectors are included to detect at least one of the secondary charged particles, back-scattered charged particles and transmitted charged particles from the substrate. The substrate is mounted on an x-y stage to provide at least one degree of freedom while the substrate is being scanned by the charged particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary charged particles. The system facilitates inspection at low beam energies on charge sensitive insulating substrates and has the capability to accurately measure the position of the substrate with respect to the charged particle beam.

Abstract: There is disclosed numerous embodiments of a method and apparatus for a particle scanning system and an automatic inspection system. In each of these a particle beam is directed at the surface of a substrate for scanning that substrate. Also included are a selection of detectors to detect at least one of the secondary particles, back-scattered particles and transmitted particles from the substrate. The substrate is mounted on an x-y stage to provide it with at least one degree of freedom while the substrate is being scanned by the/particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary particles. The system also has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment means for initially aligning the substrate beneath the,particle beam means.