Abstract: Systems, methodologies, and other embodiments associated with a micro-electrical-mechanical system (MEMS) Fabry-Perot interferometric device (FPID) are described. Fabricating a MEMS FPID may include fabricating a pixel plate and a reflector plate so a Fabry-Perot cavity is defined therebetween. Fabrication may include producing a capacitor plate that facilitates electrostatically moving the pixel plate. Fabrication may include producing electrical connections between plates and producing circuitry to control plate voltages to facilitate creating an electrostatic force between plates. The MEMS FPID may include stops fabricated from a conductive material and circuitry for maintaining the stops and plates at an electrical potential that will yield a zero electric field contact event.

Abstract: Systems, methodologies, and other embodiments associated with a micro-electrical-mechanical system (MEMS) Fabry-Perot interferometric device (FPID) are described. Fabricating a MEMS FPID may include fabricating a pixel plate and a reflector plate so a Fabry-Perot cavity is defined therebetween. Fabrication may include producing a capacitor plate that facilitates electrostatically moving the pixel plate. Fabrication may include producing electrical connections between plates and producing circuitry to control plate voltages to facilitate creating an electrostatic force between plates. The MEMS FPID may include stops fabricated from a conductive material and circuitry for maintaining the stops and plates at an electrical potential that will yield a zero electric field contact event.

Abstract: An electronic light modulator device for at least partially displaying a pixel of an image, the device comprising first and second reflectors defining an optical cavity therebetween, the optical cavity being selective of an electromagnetic wavelength at an intensity by optical interference, the device having at least first and second optical states, at least one of the optical states being tunable and the other not tunable.

Abstract: A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

Abstract: A light modulator device includes a bottom charge plate; a pixel plate supported by at least one flexure, wherein the flexure is located substantially below said pixel plate, and a top charge plate.

Abstract: Methods and systems for forming compound slots in a substrate are described. In one exemplary implementation, a structure contains a plurality of slots in a substrate. The structure also has a trench in the substrate contiguous with the plurality of slots to form a compound slot.

Abstract: A light modulator device includes a bottom charge plate; a pixel plate supported by at least one flexure, wherein the flexure is located substantially below said pixel plate, and a top charge plate.

Abstract: A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

Abstract: A micro electromechanical system (MEMS) mirror, comprising a displaceable hinged member, a mirror plate, and a plurality of mirror support elements. The mirror plate has a planar mirror face affixed thereto. The plurality of mirror support elements extend between the displaceable hinged member and the mirror plate.

Abstract: An electronic device for at least partially displaying a pixel of an image, the device comprising first and second reflectors defining an optical cavity therebetween, the optical cavity being selective of an electromagnetic wavelength at an intensity by optical interference, the device having a concentric control structure comprising at least an inner and an outermost electrode, the optical cavity being controlled only by the inner electrode.

Abstract: A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the ac

Abstract: A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including, filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer.

Abstract: A microelectromechanical system (MEMS) device is created by forming mechanical structures supported by a substrate having a bond ring area laterally spaced from the mechanical structures and having a sacrificial layer surrounding the mechanical structures. A bond ring material is formed on top of the sacrificial layer and the bond ring area. Some of the bond ring material is then removed to create a bond ring.

Abstract: A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the ac