Abstract: One example discloses a capacitance device, including: a substrate; a bottom-plate coupled to the substrate; an insulator coupled to the bottom-plate; and a top-plate coupled to the insulator; wherein the top-plate includes a flat portion and a curved portion.

Abstract: A method for reducing transistor sensitivity to shallow trench isolation defects (STI) includes filling a trench formed in a substrate of a semiconductor device, at least partially, with a first oxide, the trench defines an STI and includes a defect extending from the substrate. A mask defines a planar area within the isolation region including a first lateral distance between an edge of the mask and an edge of the isolation region. The first oxide is at least partially removed beneath the planar area with an oxide etch to expose a top portion of the defect. The top portion of the defect is removed with a semiconductor etch. After removing the top portion of the defect, the trench is at least partially filled with a second oxide. A field plate of a split-gate transistor is formed over the STI.

Abstract: A method of manufacturing a semiconductor device includes forming a trench that includes a needle defect, depositing a high density plasma oxide over the trench including the needle defect, removing the part of the high density oxide and the liner oxide over the needle defect by applying an oxide etch, and after the step of applying the oxide etch, etching back the needle defect by applying a polysilicon etch.

Abstract: Consistent with an example embodiment, a wirebonding process comprises forming a bond pad with a roughened upper surface, lowering a copper wirebond ball onto the roughened bond bad, and applying a force to the wirebond ball against the roughened surface, A heat treatment is applied to form the bond between the wirebond ball and the roughened surface, wherein the bond is formed without use of ultrasonic energy. This process avoids the use of ultrasonic welding and thereby reduces the occurrence of microcracks and resulting Chip Out of the Bond (COUB) and Metal Peel Off (MPO) failures. The roughened surface of the bond pad improves the reliability of the connection.