Patents by Inventor Eric P. Hollar

Eric P. Hollar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
    Patent number: 7056560
    Abstract: A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.
    Type: Grant
    Filed: February 4, 2004
    Date of Patent: June 6, 2006
    Assignee: Applies Materials Inc.
    Inventors: Kang Sub Yim, Yi Zheng, Srinivas D. Nemani, Li-Qun Xia, Eric P. Hollar
  • Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
    Publication number: 20040156987
    Abstract: A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.
    Type: Application
    Filed: February 4, 2004
    Publication date: August 12, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Kang Sub Yim, Yi Zheng, Srinivas D. Nemani, Li-Qun Xia, Eric P. Hollar