Abstract: A hybrid bonded semiconductor structure includes a first substrate and a second substrate each having an interface joined in a hybrid bond. Each substrate has a die portion and a crackstop structure adjacent the die portion. One or more voids in the first substrate and the second substrate are formed in or about a portion of a periphery of each crackstop structure. At least some of the one or more voids in the first substrate and the second substrate are substantially aligned to form a unified void with airgaps across the hybrid bond interface.

Abstract: A semiconductor element includes a conductive pad. The semiconductor element further includes a first layer of a first polyimide material having an uppermost surface. The first layer includes a via trench extending through the first layer from the uppermost surface to the conductive pad. The semiconductor element further includes a second layer of a second polyimide material arranged in direct contact with the uppermost surface. The second layer includes a line trench extending to the uppermost surface. The semiconductor element further includes a conductive structure arranged in the via trench and the line trench such that copper is in direct contact with the second polyimide material.

Abstract: A multi-chip semiconductor device with multi-level structure including a substrate with a top substrate surface, a cavity with a depth in the substrate, a first chip having a top first chip surface with a first chip height, optionally including a second chip having a top second chip surface with a second chip height, and a connecting passive chip bridging the first chip, the second chip and the substrate by solder bumps wherein the solder bumps enable the connecting passive chip to be level.

Abstract: A method for constructing a composite solder transfer moldplate for flip chip wafer bumping of a substrate, comprising the steps of coating at least one polymer layer onto a first side of a transparent plate, the plate having a thermal expansion coefficient similar to that of the substrate; and forming a multiplicity of cavities in a polymer layer on one side of the plate, each cavity being for receiving solder. A moldplate made by the method. The structure has required behavior through temperature excursions between room temperature and various solder molten temperatures.

Abstract: Sealing a via using a soventless, low viscosity, high temperature stable polymer or a high solids content polymer solution of low viscosity, where the polymeric material is impregnated within the via at an elevated temperature. A supply chamber is introduced to administer the polymeric material at an elevated temperature, typically at a temperature high enough to liquefy the polymeric material. The polymeric material is introduced through heated supply lines under force from a pump, piston, or a vacuum held within said supply chamber.