Abstract: Methods of forming a 3D structure in a substrate are disclosed. A layer of resist is deposited on the substrate. The layer of resist is patterned to define an edge at a predetermined location. The resist is reflowed to form a tapered region extending from the etch. Both the reflowed resist and the substrate are concurrently etched to transfer the tapered profile of the reflowed resist into the underlying substrate to form an angled surface. The etching is discontinued before all of the resist is consumed by the etching.

Abstract: Methods of forming a 3D structure in a substrate are disclosed. A layer of resist is deposited on the substrate. The layer of resist is patterned to define an edge at a predetermined location. The resist is reflowed to form a tapered region extending from the etch. Both the reflowed resist and the substrate are concurrently etched to transfer the tapered profile of the reflowed resist into the underlying substrate to form an angled surface. The etching is discontinued before all of the resist is consumed by the etching.

Abstract: A processing method herein enables patterning a thin-film photovoltaic module into cells and/or sub-cells using an etch process. According to one aspect, an etch mixture is identified that is capable etching through a thin-film material such as CIGS with high selectivity to both photoresist and underlying layers such as metal. According to another aspect, the etch process enables patterning a photovoltaic device using lithographic techniques. Among other things, the invention enables forming interconnect structures with feature sizes that are substantially smaller than is possible with prior art techniques, and avoids many of the problems associated with laser and mechanical scribes, thus resulting in better and more efficient photovoltaic modules.