Patents by Inventor Eric Pertermann

Eric Pertermann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor device with improved stability and method for producing the same
    Patent number: 9698138
    Abstract: A power semiconductor device includes a first contact, a second contact, and a semiconductor volume disposed between the first contact and the second contact. The semiconductor volume includes an n-doped field stop layer configured to spatially delimit an electric field that in the semiconductor volume during operation of the power semiconductor device, a heavily p-doped zone and a neighboring heavily n-doped zone, which together form a tunnel diode. The tunnel diode is located in the vicinity of, or adjacent to, or within the field stop layer. The tunnel diode is configured to provide protection against damage to the device due to a rise of an electron flow in an abnormal operating condition, by the fast provision of holes. Further, a method for producing such devices is provided.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: July 4, 2017
    Assignee: Infineon Technologies AG
    Inventors: Hans-Joachim Schulze, Josef Lutz, Eric Pertermann
  • Power Semiconductor Device with Improved Stability and Method for Producing the Same
    Publication number: 20160172352
    Abstract: A power semiconductor device includes a first contact, a second contact, and a semiconductor volume disposed between the first contact and the second contact. The semiconductor volume includes an n-doped field stop layer configured to spatially delimit an electric field that in the semiconductor volume during operation of the power semiconductor device, a heavily p-doped zone and a neighboring heavily n-doped zone, which together form a tunnel diode. The tunnel diode is located in the vicinity of, or adjacent to, or within the field stop layer. The tunnel diode is configured to provide protection against damage to the device due to a rise of an electron flow in an abnormal operating condition, by the fast provision of holes. Further, a method for producing such devices is provided.
    Type: Application
    Filed: December 14, 2015
    Publication date: June 16, 2016
    Inventors: Hans-Joachim Schulze, Josef Lutz, Eric Pertermann