Abstract: In mask inspection, the defects that are of interest are primarily those that will also show up on wafer exposure. The aerial images generated in the resist and by emulation should be as identical as possible. This also applies to methods in which an overall structure that is divided into at least two substructures on at least two masks. A system and a method are provided for emulating a photolithographic process for generating on a wafer an overall structure that is divided into at least two substructures on at least two masks. The method includes generating aerial images of the at least two substructures, at least one of the aerial images being captured with a mask inspection microscope; correcting, by using a processing unit, errors in the at least one aerial image captured with a mask inspection microscope; and overlaying the aerial images of the at least two substructures to form an overall aerial image with the overall structure.

Abstract: In mask inspection, the defects that are of interest are primarily those that will also show up on wafer exposure. The aerial images generated in the resist and by emulation should be as identical as possible. This also applies to methods in which an overall structure that is divided into at least two substructures on at least two masks. A system and a method are provided for emulating a photolithographic process for generating on a wafer an overall structure that is divided into at least two substructures on at least two masks. The method includes generating aerial images of the at least two substructures, at least one of the aerial images being captured with a mask inspection microscope; correcting, by using a processing unit, errors in the at least one aerial image captured with a mask inspection microscope; and overlaying the aerial images of the at least two substructures to form an overall aerial image with the overall structure.

Abstract: The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits.

Abstract: The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits.

Abstract: The present invention generally relates to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits.