Patents by Inventor Eric Porter Carlson

Eric Porter Carlson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6784085
    Abstract: A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group III nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal MIIIN layer thereon. The template material is removed, thereby providing a free-standing, single-crystal MIIIN article having a diameter of approximately 0.
    Type: Grant
    Filed: November 30, 2001
    Date of Patent: August 31, 2004
    Assignee: North Carolina State University
    Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
  • Patent number: 6692568
    Abstract: A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials.
    Type: Grant
    Filed: November 30, 2001
    Date of Patent: February 17, 2004
    Assignee: Kyma Technologies, Inc.
    Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
  • Publication number: 20020086534
    Abstract: A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group IIl nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal MIIIN layer thereon. The template material is removed, thereby providing a free-standing, single-crystal MIIIN article having a diameter of approximately 0.
    Type: Application
    Filed: November 30, 2001
    Publication date: July 4, 2002
    Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
  • Publication number: 20020078881
    Abstract: A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials.
    Type: Application
    Filed: November 30, 2001
    Publication date: June 27, 2002
    Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas