Patents by Inventor Eric R. Dickey

Eric R. Dickey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200017970
    Abstract: Water-insensitive methods for forming metal oxide films disclosed herein can be used to form coated substrates. The methods can be used with moisture-laden substrates. Moisture-sensitive films can be deposited on the metal oxide films.
    Type: Application
    Filed: July 12, 2019
    Publication date: January 16, 2020
    Inventor: Eric R. Dickey
  • Patent number: 9647208
    Abstract: Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: May 9, 2017
    Assignee: Intel Corporation
    Inventors: Elijah V. Karpov, Brian S. Doyle, Charles C. Kuo, Robert S. Chau, Eric R. Dickey, Michael Stephen Bowen, Sey-Shing Sun
  • Publication number: 20170088951
    Abstract: The present disclosure relates to metal oxide barrier films and particularly to methods for depositing high-quality barrier films. Methods are disclosed that are capable of producing thin barrier films with water vapor transmission rates (WVTR) below 0.1 g/(m2·day) after exposure to extreme temperatures and humidity. Methods are disclosed for making such films on a continuous web.
    Type: Application
    Filed: October 16, 2015
    Publication date: March 30, 2017
    Inventors: Eric R. Dickey, Bryan Larson Danforth
  • Publication number: 20170025635
    Abstract: A method of forming a thin barrier film of a mixed metal-silicon-oxide is disclosed. For example, a method of forming an aluminum-silicon-oxide mixture having a refractive index of 1.8 or less comprises exposing a substrate to sequences of a non-hydroxylated silicon-containing precursor, activated oxygen species, and metal-containing precursor until a mixed metal-silicon-oxide film having a thickness of 500 ?ngstroms or less is formed on the substrate.
    Type: Application
    Filed: February 16, 2016
    Publication date: January 26, 2017
    Inventors: Eric R. Dickey, Bryan Larson Danforth
  • Patent number: 9469901
    Abstract: Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones and through a third precursor zone interposed between the first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides spaced apart along the first and second precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between the first and second precursor zones and through the third precursor zone, it passes through a first series of flow-restricting passageways of a first isolation region interposed between the first and third precursor zones and a second series of flow-restricting passageways of a second isolation region interposed between the second and third precursor zones.
    Type: Grant
    Filed: May 8, 2012
    Date of Patent: October 18, 2016
    Assignee: LOTUS APPLIED TECHONOLOGY, LLC
    Inventors: Eric R. Dickey, William A. Barrow
  • Patent number: 9435028
    Abstract: A system for depositing a thin film on a flexible substrate comprises a plurality of processing zones spaced apart by an isolation zone, a plasma generator for generating a plasma region proximal to a pathway along which the substrate travels, and a substrate transport mechanism for guiding the substrate back and forth between the processing zones so that the substrate is transported past and exposed to the plasma region when the system is in use.
    Type: Grant
    Filed: May 6, 2013
    Date of Patent: September 6, 2016
    Assignees: Lotus Applied Technology, LLC, Toppan Printing Co., Ltd.
    Inventor: Eric R. Dickey
  • Publication number: 20160108524
    Abstract: The present disclosure relates to metal oxide barrier films and particularly to high-speed methods for depositing such barrier films. Methods are disclosed that are capable of producing barrier films with water vapor transmission rates (WVTR) below 0.1 g/(m2·day). Methods are disclosed for continuously transporting a substrate within an atomic layer deposition (ALD) reactor and performing a limited number of ALD cycles to achieve a desired WVTR.
    Type: Application
    Filed: October 16, 2015
    Publication date: April 21, 2016
    Applicant: LOTUS APPLIED TECHNOLOGY, LLC
    Inventors: Eric R. Dickey, Bryan Larson Danforth
  • Patent number: 9297076
    Abstract: Systems and methods for depositing a thin film on a flexible substrate involve guiding the flexible substrate along a spiral transport path back and forth between spaced-apart first and second precursor zones so that the substrate transits through the first and second precursor zones multiple times and each time through an intermediate isolation zone without mechanically contacting an outer surface of the substrate with a substrate transport mechanism, thereby inhibiting mechanical damage to the thin film deposited on the outer surface, which may improve barrier layer performance of the thin film.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: March 29, 2016
    Assignee: Lotus Applied Technology, LLC
    Inventor: Eric R. Dickey
  • Publication number: 20160079523
    Abstract: Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
    Type: Application
    Filed: November 24, 2015
    Publication date: March 17, 2016
    Inventors: Elijah V. Karpov, Brian S. Doyle, Charles C. Kuo, Robert S. Chau, Eric R. Dickey, Michael Stephen Bowen, Sey-Shing Sun
  • Patent number: 9263359
    Abstract: A method of forming a thin barrier film of a mixed metal-silicon-oxide is disclosed. For example, a method of forming an aluminum-silicon-oxide mixture having a refractive index of 1.8 or less comprises exposing a substrate to sequences of a non-hydroxylated silicon-containing precursor, activated oxygen species, and metal-containing precursor until a mixed metal-silicon-oxide film having a thickness of 500 ?ngstroms or less is formed on the substrate.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: February 16, 2016
    Assignee: Lotus Applied Technology, LLC
    Inventors: Eric R. Dickey, Bryan Larson Danforth
  • Patent number: 9238868
    Abstract: Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides, such as rollers, spaced apart along the precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between precursor zones, it passes through a series of flow-restricting passageways of an isolation zone into which an inert gas is injected to inhibit migration of precursor gases out of the precursor zones. Also disclosed are systems and methods for utilizing more than two precursor chemicals and for recycling precursor gases exhausted from the precursor zones.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: January 19, 2016
    Assignee: Lotus Applied Technology, LLC
    Inventors: Eric R. Dickey, William A. Barrow
  • Patent number: 9231204
    Abstract: Embodiments include low voltage embedded memory having conductive oxide and electrode stacks. A material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: January 5, 2016
    Assignee: Intel Corporation
    Inventors: Elijah V. Karpov, Brian S. Doyle, Charles C. Kuo, Robert S. Chau, Eric R. Dickey, Michael Stephen Bowen, Sey-Shing Sun
  • Patent number: 9133546
    Abstract: A system for forming a thin film on a substrate uses a plasma to activate at least one gaseous precursor in a plasma generator fluidly coupled with a reaction space. The plasma generator is operative to generate a plasma from at least a portion of the precursor gas with at least one pair of plasma electrodes, one plasma electrode having a non-native electrically conductive adlayer exhibiting property characteristics that cause the adlayer to be substantially conserved and chemically active with at least one of the gases present within the plasma generation region.
    Type: Grant
    Filed: March 5, 2014
    Date of Patent: September 15, 2015
    Assignee: LOTUS APPLIED TECHNOLOGY, LLC
    Inventors: Eric R. Dickey, Bryan Larson Danforth, Masato Kon
  • Publication number: 20150252478
    Abstract: A system for forming a thin film on a substrate uses a plasma to activate at least one gaseous precursor in a plasma generator fluidly coupled with a reaction space. The plasma generator is operative to generate a plasma from at least a portion of the precursor gas with at least one pair of plasma electrodes, one plasma electrode having a non-native electrically conductive adlayer exhibiting property characteristics that cause the adlayer to be substantially conserved and chemically active with at least one of the gases present within the plasma generation region.
    Type: Application
    Filed: March 5, 2014
    Publication date: September 10, 2015
    Inventors: Eric R. Dickey, Bryan Larson Danforth, Masato Kon
  • Publication number: 20140329030
    Abstract: A system for depositing a thin film on a flexible substrate comprises a plurality of processing zones spaced apart by an isolation zone, a plasma generator for generating a plasma region proximal to a pathway along which the substrate travels, and a substrate transport mechanism for guiding the substrate back and forth between the processing zones so that the substrate is transported past and exposed to the plasma region when the system is in use.
    Type: Application
    Filed: May 6, 2013
    Publication date: November 6, 2014
    Inventor: Eric R. Dickey
  • Publication number: 20140242736
    Abstract: A method of forming a thin barrier film of a mixed metal-silicon-oxide is disclosed. For example, a method of forming an aluminum-silicon-oxide mixture having a refractive index of 1.8 or less comprises exposing a substrate to sequences of a non-hydroxylated silicon-containing precursor, activated oxygen species, and metal-containing precursor until a mixed metal-silicon-oxide film having a thickness of 500 ?ngstroms or less is formed on the substrate.
    Type: Application
    Filed: February 26, 2014
    Publication date: August 28, 2014
    Inventors: Eric R. Dickey, Bryan Larson Danforth
  • Publication number: 20140092666
    Abstract: Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
    Type: Application
    Filed: September 28, 2012
    Publication date: April 3, 2014
    Inventors: Elijah V. Karpov, Brian S. Doyle, Charles C. Kuo, Robert S. Chau, Eric R. Dickey, Michael Stephen Bowen, Sey-Shing Sun
  • Patent number: 8637117
    Abstract: Systems and methods for ALD thin film deposition include a mechanism for removing excess non-chemisorbed precursors from the surface of a substrate in a translation-based process involving multiple separate precursor zones. Excess precursor removal mechanisms according to the present disclosure may introduce localized high temperature conditions, high energy conditions, or azeotropes of the excess precursor, to liberate the excess precursor before it reaches a separate precursor zone, thereby inhibiting CVD deposition from occurring without causing heat-induced degradation of the substrate.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: January 28, 2014
    Assignee: Lotus Applied Technology, LLC
    Inventors: Eric R. Dickey, William A. Barrow
  • Patent number: 8637123
    Abstract: A method of radical-enhanced atomic layer deposition (REALD) involves alternating exposure of a substrate to a first precursor gas and to radicals, such as monatomic oxygen radicals (O.), generated from an oxygen-containing second precursor gas, while maintaining spatial or temporal separation of the radicals and the first precursor gas. Simplified reactor designs and process control are possible when the first and second precursor gases are nonreactive under normal processing conditions and can therefore be allowed to mix after the radicals recombine or otherwise abate. In some embodiments, the second precursor gas is an oxygen-containing compound, such as carbon dioxide (CO2) or nitrous oxide (N2O) for example, or a mixture of such oxygen-containing compounds, and does not contain significant amounts of normal oxygen (O2).
    Type: Grant
    Filed: December 28, 2010
    Date of Patent: January 28, 2014
    Assignee: Lotus Applied Technology, LLC
    Inventors: Eric R. Dickey, William A. Barrow
  • Publication number: 20130177760
    Abstract: A method of forming a thin barrier layer film of a mixed metal oxide, such as a mixture of aluminum, titanium, and oxygen (AlTiO), comprises sequential exposure of a substrate having a surface temperature less than 100° C. to a halide precursor, an oxygen plasma, and a metalorganic precursor. Barrier films formed by the method exhibit improved water vapor transmission rate (WVTR) over single metal oxide films and nanolaminates of two metal oxides having a similar overall thickness.
    Type: Application
    Filed: July 11, 2012
    Publication date: July 11, 2013
    Applicant: Lotus Applied Technology, LLC
    Inventor: Eric R. Dickey