Abstract: Embodiments are disclosed for a system that includes a data scrubbing circuit, a magnetoresistive random access memory (MRAM) having a memory array, and an analog persistent vital information circuit (APVIC) that performs a method. The method includes resetting weights corresponding to blocks of the memory array. The method further includes adjusting the weights based on a timer, data accesses on the memory blocks, and weight change values corresponding to the weights. The method also includes determining, in response to the timer, a data scrubbing threshold based on ambient temperature and magnetic field strength. The method additionally includes determining one of the weights meets the data scrubbing threshold. Further, the method includes providing, in response to the determination, an indication that a data scrubber, scrub one of the memory blocks corresponding to the weight that meets the data scrubbing threshold. Also, the method includes resetting the weight.

Abstract: A memory system for storage access monitoring is provided. The memory system includes a media controller of a memory. An analog persistent circuit is coupled to the media controller and configured to monitor access to the memory. The analog persistent circuit stores persistent data related to memory access counts access signals from the command/address bus. A command/address bus is coupled to the analog persistent circuit. A memory array is communicatively coupled to the command address and the media controller.

Abstract: Skills and skills metadata may be used to define a process for building a data center. Skills of one service may depend on skills corresponding to the same or different service. A dependency graph may be generated based on these dependencies. The graph may specify an order by which orchestration operations are to be performed to build the services, thereby building the data center. During execution of the process for building the data center, health states corresponding to the skills may be tracked (based at least in part on alarms and/or namespaces associated with the skills). When an unhealthy skill is identified, the system may traverse the dependency graph to identify a root cause (e.g., failed operations corresponding to a skill on which the unhealthy skill directly/indirectly depends). A notification and/or various options may be provided to address the unhealthy state of one or both skills.

Abstract: A cloud-computing service (e.g., a “Puffin Service”) is described. The service may maintain service and skill catalogs corresponding to various services to be deployed to a region (e.g., during a region build). The service may host numerous user interfaces with which various service and skill metadata may be provided. In some embodiments, such data may include one or more dependencies between skills. The data managed by the cloud-computing service may be utilized to build a dependency graph. Navigation of the dependency graph may be performed via one or more user interfaces hosted by the cloud-computing service. An orchestration service (e.g., a Multi-Flock Orchestrator) may manage bootstrapping efforts for any suitable number of services during a region build based at least in part on dependencies between skills.

Abstract: A cloud-computing service (e.g., a “Puffin Service”) is described. The service may maintain backward and forward compatibility between skills and capabilities. Skills may be configured to enable improved tracking of a process for building data center. There may be occasions in which an orchestrator may use both skills and capabilities to drive build operations. To enable both constructs to be utilized, the Puffin Service maintains associations between skills and capabilities. These associations enable skills to be published when published capabilities are identified and corresponding capabilities to be published for published skills, which in turn allows the Orchestrator to drive build operations based on any suitable combination of capabilities and/or skills. Previously published capabilities may be identified and system-generated skills (“shadow skills”) may be used to represent the previously published capabilities, further enabling compatibility between constructs while avoiding burdensome data entry.

Abstract: A computer-implemented method is provided for detecting a dynamic object in a visual line of sight of an aircraft. The method includes implementing, by a computer system, the following operations: receiving at least two image frames; detecting a horizon within at least one of the at least two image frames; segmenting each of the at least two image frames into at least first and second search regions using the detected horizon, wherein the first search region is defined above the detected horizon in the at least two image frames and the second search region is defined below the horizon in the at least two image frames; determining, across the at least two image frames, a motion vector field within at least one of the first search region or the second search region; and identifying a detection proposal using the determined motion vector field.

Abstract: Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a flash controller and a first flash chip communicably coupled with the flash controller. The first flash chip may include a first flash cell array and a first voltage recalibration analog circuit (VRAC) configured to adjust a first threshold voltage for the first flash cell array based on a tracking of accesses to the first flash cell array.

Abstract: The present disclosure relates to an optical fiber having a core and a cladding, where the cladding is doped with a dopant. The cladding has a dopant concentration gradient in the radial direction such that a concentration of the dopant changes with respect to radial distance from a core-cladding interface. Doping the cladding of the optical fiber enables ablation of the fiber surface with a line source to provide an ablated wedge or crack such that cleaving can be achieved by applying a stress force to the fiber after ablation or by applying a pull force during ablation.

Abstract: Disclosed herein are embodiments of a cable assembly including an optical fiber cable connectorized at one or both ends. The optical fiber cable of the cable assembly includes a cable jacket having an inner surface and an outer surface. The inner surface defines a central bore extending along a longitudinal axis of the optical fiber cable, and the outer surface defines an outermost surface of the optical fiber cable. At least one tensile strand is disposed between the inner surface and the outer surface of the cable jacket, and at least one optical element is disposed within the central bore of the cable jacket. Also disclosed herein are a method of preparing a cable assembly by attaching a connector to the optical fiber cable as and a method of preparing the optical fiber cable.

Abstract: Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a top contact, a hard mask layer below the top contact, and a magnetic tunnel junction (MTJ) below the hard mask layer. The MRAM cell further comprises a diffusion barrier below the MTJ, a bottom contact below the diffusion barrier, and a magnetic liner arranged around the bottom contact.

Abstract: Embodiments are disclosed for a system that includes a data scrubbing circuit, a magnetoresistive random access memory (MRAM) having a memory array, and an analog persistent vital information circuit (APVIC) that performs a method. The method includes resetting weights corresponding to blocks of the memory array. The method further includes adjusting the weights based on a timer, data accesses on the memory blocks, and weight change values corresponding to the weights. The method also includes determining, in response to the timer, a data scrubbing threshold based on ambient temperature and magnetic field strength. The method additionally includes determining one of the weights meets the data scrubbing threshold. Further, the method includes providing, in response to the determination, an indication that a data scrubber, scrub one of the memory blocks corresponding to the weight that meets the data scrubbing threshold. Also, the method includes resetting the weight.

Abstract: A dolly has a frame; a plurality of rolling elements mounted on the frame for rotation about respective rotational axes generally parallel to the ground surface and defining a contact footprint of the dolly on the ground surface. The axes extend in a plane between a load contacting surface of the dolly and the ground surface at a distance between 30% and 50% of a height defined between the load contacting surface of the dolly and the ground surface. A swivel platform defines the load contacting surface extending at an elevation above the frame and mounted on the frame for rotation about a platform axis located within the contact footprint. An actuator unit is drivingly engaged to at least two rolling elements of the plurality of rolling elements, the at least two rolling elements disposed on opposite sides of the swivel platform. An on-board controller unit is operable to actuate the actuator unit.

Abstract: A memory system for storage access monitoring is provided. The memory system includes a media controller of a memory. An analog persistent circuit is coupled to the media controller and configured to monitor access to the memory. The analog persistent circuit stores persistent data related to memory access counts access signals from the command/address bus. A command/address bus is coupled to the analog persistent circuit. A memory array is communicatively coupled to the command address and the media controller.

Abstract: A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SHE rail, wherein the SOT-MRAM cell stack comprises a free layer, a tunnel junction layer, a reference layer, and a diode structure, forming a write line disposed in electrical contact with the SHE rail, forming a protective dielectric layer covering a portion of the SOT-MRAM cell stack, and forming a read line disposed above and adjacent to the diode structure.

Abstract: A structured optical fiber cabling system configured to connect first and second layers of switches in a mesh network is disclosed. The system comprises groups of fiber optic ports arranged side-by-side, with each group including a plurality of the fiber optic ports distributed in a vertical direction. A plurality of fiber optic jumper assemblies each include a horizontal segment and a plurality of legs and fiber optic connectors extending from the horizontal segment, with each fiber optic connector configured to connect to a corresponding fiber optic port of the plurality of the fiber optic ports at the same vertical location in each group of the array.

Abstract: A fiber optic cable assembly comprises first and second cable legs each including a tight buffer surrounding coated optical fibers, and a reduced thickness buffer connecting region, with cable leg being devoid of any surrounding jacket and any tensile strength member. A fiber optic cable assembly devoid of a tensile strength member mechanically coupled to a connector comprises a travel limiting feature that serves to limit travel of the ferrule and inhibit ferrule decoupling when tension is applied to a fiber optic cable.

Abstract: An embodiment of the invention may include a magnetic random-access memory (MRAM) structure and method of making the structure. The MRAM structure may include a magnetic tunnel junction stack. The MRAM structure may include a magnetic liner located between the magnetic tunnel junction stack and a top contact, where the magnetic liner may be a ferromagnetic material. This may enable the magnetic liner to act as an independent variable to balance many of the magnetic parameters in the MTJ film stack in order to achieve zero magnetic field at the MTJ layer.

Abstract: Rubber compositions comprising at least one diene based polymer, a precipitated silica, a coupling agent package comprising a mercapto-functional alkylalkoxysilane and a blocked mercapto-functional alkylalkoxysilane, a deblocking agent, a vulcanizing package comprising at least one vulcanizing agent comprising sulfur and at least one accelerator, and a scorch modifier are provided herein.

Abstract: A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SHE rail, wherein the SOT-MRAM cell stack comprises a free layer, a tunnel junction layer, a reference layer, and a diode structure, forming a write line disposed in electrical contact with the SHE rail, forming a protective dielectric layer covering a portion of the SOT-MRAM cell stack, and forming a read line disposed above and adjacent to the diode structure.

Abstract: Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a top contact, a hard mask layer below the top contact, and a magnetic tunnel junction (MTJ) below the hard mask layer. The MRAM cell further comprises a diffusion barrier below the MTJ, a bottom contact below the diffusion barrier, and a magnetic liner arranged around the bottom contact.