Patents by Inventor Eric S. Shapiro
Eric S. Shapiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240146301Abstract: A common gate resistor bypass arrangement for a stacked arrangement of FET switches, the arrangement including a series combination of an nMOS transistor and a pMOS transistor connected across a common gate resistor. During at least a transition portion of the transition state of the stacked arrangement of FET switches, the nMOS transistor and the pMOS transistor are both in an ON state and bypass the common gate resistor. On the other hand, during at least a steady state portion of the ON steady state and the OFF steady state of the stacked arrangement of FET switches, one of the nMOS transistor and the pMOS transistor is in an OFF state and the other of the nMOS transistor and the pMOS transistor is in an ON state, thus not bypassing the common gate resistor.Type: ApplicationFiled: January 10, 2024Publication date: May 2, 2024Inventors: Alper GENC, Fleming LAM, Eric S. SHAPIRO, Ravindranath SHRIVASTAVA
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Patent number: 11955932Abstract: Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.Type: GrantFiled: May 23, 2023Date of Patent: April 9, 2024Assignee: pSemi CorporationInventors: Jonathan James Klaren, David Kovac, Eric S. Shapiro, Christopher C. Murphy, Robert Mark Englekirk, Keith Bargroff, Tero Tapio Ranta
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Publication number: 20240063789Abstract: A FET switch stack and a method to operate a FET switch stack. The FET switch stack includes a stacked arrangement of body bypass FET switches connected across respective common body resistors. The body bypass FET switches bypass the respective common body resistors during the OFF steady state of the FET switch stack and do not bypass the respective common body resistors during the ON steady state.Type: ApplicationFiled: September 25, 2023Publication date: February 22, 2024Inventors: Eric S. SHAPIRO, Ravindranath D. SHRIVASTAVA, Fleming LAM, Matt ALLISON
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Patent number: 11855611Abstract: Implementing a series gate resistor in a switching circuit results in several performance improvements. Few examples are better insertion loss, lower breakdown voltage requirements and a lower frequency corner. These benefits come at the expense of a slower switching time. Methods and devices offering solutions to this problem are described. Using a concept of bypassing the series gate resistor during transition time, a fast switching time can be achieved while the above-mentioned performance improvements are maintained.Type: GrantFiled: September 8, 2022Date of Patent: December 26, 2023Assignee: pSemi CorporationInventors: Payman Shanjani, Eric S. Shapiro
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Publication number: 20230387864Abstract: Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.Type: ApplicationFiled: May 23, 2023Publication date: November 30, 2023Inventors: Jonathan James Klaren, David Kovac, Eric S. Shapiro, Christopher C. Murphy, Robert Mark Englekirk, Keith Bargroff, Tero Tapio Ranta
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Patent number: 11742820Abstract: A phase shifter unit cell or a connected set of such cells that can be well isolated from external circuitry and which do not introduce insertion loss into an RF signal path, exhibit good return loss, and further provides additional advantages when combined with bracketing attenuator circuits. More particularly, embodiments integrate a high-isolation function within a phase shifter circuit by breaking the complimentary nature of the control signals to a phase shifter cell to provide greater control of switch states internal to the phase shifter cell and thus enable a distinct high-isolation state, and by including a switchable shunt termination resistor for use in the high-isolation state. Some embodiments are serially coupled to attenuator circuits to enable synergistic interaction that reduces overall die size and/or increases isolation. One such embodiment positions a high-isolation phase shifter cell in accordance with the present invention between bracketing programmable attenuators.Type: GrantFiled: July 21, 2021Date of Patent: August 29, 2023Assignee: pSemi CorporationInventors: Eric S. Shapiro, Peter Bacon
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Publication number: 20230208417Abstract: Methods and devices to address the undesired DC voltage distribution across switch stacks in OFF state are disclosed. The disclosed devices include charge control elements that sample the RF signal to generate superimposed voltages at specific points of the switch stack biasing circuit. The provided voltages help reducing the drooping voltages on drain/source/body terminals of the transistors within the stack by supplying the current drawn by drain/source terminals of the stacked transistors and/or by sinking the body leakage current exiting the body terminals of such transistors. Methods and techniques teaching how to provide proper tapping points in the biasing circuit to sample the RF signal are also disclosed.Type: ApplicationFiled: December 27, 2022Publication date: June 29, 2023Inventors: Eric S. SHAPIRO, Simon Edward WILLARD
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Patent number: 11670555Abstract: Method and devices to reduce integrated circuit fabrication process yield loss due to undesired interactions between PCMs and the wafer test probes during wafer sorting tests are disclosed. The described methods entail the use of a properly patterned metal layer on the PCM dies adjacent to the product dies under test. Such patterned metal layers shield traces of the wafer probes from the circuits of the PCM dies. Various exemplary metal layer patterns are also presented.Type: GrantFiled: December 18, 2020Date of Patent: June 6, 2023Assignee: PSEMI CORPORATIONInventors: Jacob Hamilton, Tran Kononova, Jay Kothari, Matt Allison, Kim T. Nguyen, Eric S. Shapiro
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Patent number: 11664769Abstract: Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.Type: GrantFiled: June 17, 2022Date of Patent: May 30, 2023Assignee: pSemi CorporationInventors: Jonathan James Klaren, David Kovac, Eric S. Shapiro, Christopher C. Murphy, Robert Mark Englekirk, Keith Bargroff, Tero Tapio Ranta
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Publication number: 20230140958Abstract: Implementing a series gate resistor in a switching circuit results in several performance improvements. Few examples are better insertion loss, lower breakdown voltage requirements and a lower frequency corner. These benefits come at the expense of a slower switching time. Methods and devices offering solutions to this problem are described. Using a concept of bypassing the series gate resistor during transition time, a fast switching time can be achieved while the above-mentioned performance improvements are maintained.Type: ApplicationFiled: September 8, 2022Publication date: May 11, 2023Inventors: Payman Shanjani, Eric S. Shapiro
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Patent number: 11569812Abstract: Methods and devices to address the undesired DC voltage distribution across switch stacks in OFF state are disclosed. The disclosed devices include charge control elements that sample the RF signal to generate superimposed voltages at specific points of the switch stack biasing circuit. The provided voltages help reducing the drooping voltages on drain/source/body terminals of the transistors within the stack by supplying the current drawn by drain/source terminals of the stacked transistors and/or by sinking the body leakage current exiting the body terminals of such transistors. Methods and techniques teaching how to provide proper tapping points in the biasing circuit to sample the RF signal are also disclosed.Type: GrantFiled: June 15, 2020Date of Patent: January 31, 2023Assignee: PSEMI CORPORATIONInventors: Eric S. Shapiro, Simon Edward Willard
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Publication number: 20220368287Abstract: Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.Type: ApplicationFiled: June 17, 2022Publication date: November 17, 2022Inventors: Jonathan James Klaren, David Kovac, Eric S. Shapiro, Christopher C. Murphy, Robert Mark Englekirk, Keith Bargroff, Tero Tapio Ranta
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Patent number: 11444614Abstract: Implementing a series gate resistor in a switching circuit results in several performance improvements. Few examples are better insertion loss, lower breakdown voltage requirements and a lower frequency corner. These benefits come at the expense of a slower switching time. Methods and devices offering solutions to this problem are described. Using a concept of bypassing the series gate resistor during transition time, a fast switching time can be achieved while the abovementioned performance improvements are maintained.Type: GrantFiled: November 18, 2020Date of Patent: September 13, 2022Assignee: pSemi CorporationInventors: Payman Shanjani, Eric S. Shapiro
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Patent number: 11405034Abstract: A FET switch stack and a method to operate a FET switch stack. The FET switch stack includes a stacked arrangement of body bypass FET switches connected across respective common body resistors. The body bypass FET switches bypass the respective common body resistors during the OFF steady state of the FET switch stack and do not bypass the respective common body resistors during the ON steady state.Type: GrantFiled: May 14, 2021Date of Patent: August 2, 2022Assignee: PSEMI CORPORATIONInventors: Eric S. Shapiro, Ravindranath D. Shrivastava, Fleming Lam, Matt Allison
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Patent number: 11405035Abstract: A common gate resistor bypass arrangement for a stacked arrangement of FET switches, the arrangement including a series combination of an nMOS transistor and a pMOS transistor connected across a common gate resistor. During at least a transition portion of the transition state of the stacked arrangement of FET switches, the nMOS transistor and the pMOS transistor are both in an ON state and bypass the common gate resistor. On the other hand, during at least a steady state portion of the ON steady state and the OFF steady state of the stacked arrangement of FET switches, one of the nMOS transistor and the pMOS transistor is in an OFF state and the other of the nMOS transistor and the pMOS transistor is in an ON state, thus not bypassing the common gate resistor.Type: GrantFiled: July 13, 2021Date of Patent: August 2, 2022Assignee: PSEMI CORPORATIONInventors: Alper Genc, Fleming Lam, Eric S. Shapiro, Ravindranath Shrivastava
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Patent number: 11374540Abstract: Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.Type: GrantFiled: July 22, 2020Date of Patent: June 28, 2022Assignee: pSemi CorporationInventors: Jonathan James Klaren, David Kovac, Eric S. Shapiro, Christopher C. Murphy, Robert Mark Englekirk, Keith Bargroff, Tero Tapio Ranta
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Publication number: 20220199475Abstract: Method and devices to reduce integrated circuit fabrication process yield loss due to undesired interactions between PCMs and the wafer test probes during wafer sorting tests are disclosed. The described methods entail the use of a properly patterned metal layer on the PCM dies adjacent to the product dies under test. Such patterned metal layers shield traces of the wafer probes from the circuits of the PCM dies. Various exemplary metal layer patterns are also presented.Type: ApplicationFiled: December 18, 2020Publication date: June 23, 2022Inventors: Jacob HAMILTON, Tran KONONOVA, Jay KOTHARI, Matt ALLISON, Kim T. NGUYEN, Eric S. SHAPIRO
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Publication number: 20220038097Abstract: Methods and devices to reduce gate induced drain leakage current in RF switch stacks are disclosed. The described devices utilize multiple discharge paths and/or less negative body bias voltages without compromising non-linear performance and power handling capability of power switches. Moreover, more compact bias voltage generation circuits with smaller footprint can be implemented as part of the disclosed devices.Type: ApplicationFiled: July 27, 2021Publication date: February 3, 2022Inventors: Alper GENC, Eric S. SHAPIRO
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Publication number: 20220021367Abstract: A phase shifter unit cell or a connected set of such cells that can be well isolated from external circuitry and which do not introduce insertion loss into an RF signal path, exhibit good return loss, and further provides additional advantages when combined with bracketing attenuator circuits. More particularly, embodiments integrate a high-isolation function within a phase shifter circuit by breaking the complimentary nature of the control signals to a phase shifter cell to provide greater control of switch states internal to the phase shifter cell and thus enable a distinct high-isolation state, and by including a switchable shunt termination resistor for use in the high-isolation state. Some embodiments are serially coupled to attenuator circuits to enable synergistic interaction that reduces overall die size and/or increases isolation. One such embodiment positions a high-isolation phase shifter cell in accordance with the present invention between bracketing programmable attenuators.Type: ApplicationFiled: July 21, 2021Publication date: January 20, 2022Inventors: Eric S. Shapiro, Peter Bacon
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Publication number: 20210391858Abstract: Methods and devices to address the undesired DC voltage distribution across switch stacks in OFF state are disclosed. The disclosed devices include charge control elements that sample the RF signal to generate superimposed voltages at specific points of the switch stack biasing circuit. The provided voltages help reducing the drooping voltages on drain/source/body terminals of the transistors within the stack by supplying the current drawn by drain/source terminals of the stacked transistors and/or by sinking the body leakage current exiting the body terminals of such transistors. Methods and techniques teaching how to provide proper tapping points in the biasing circuit to sample the RF signal are also disclosed.Type: ApplicationFiled: June 15, 2020Publication date: December 16, 2021Inventors: Eric S. SHAPIRO, Simon Edward WILLARD