Abstract: A baseplate for a substrate support in a substrate processing system includes at least one coolant channel formed within the baseplate. The at least one coolant channel defines a volume within the baseplate configured to retain a coolant and follows a path configured to distribute the coolant in the volume throughout the baseplate. At least one fin is provided within the at least one coolant channel. The at least one fin extends from at least one of a top, a bottom, and a sidewall of the at least one coolant channel into the volume to increase a surface area of the at least one coolant channel.

Abstract: A baseplate for a substrate support in a substrate processing system includes at least one coolant channel formed within the baseplate. The at least one coolant channel defines a volume within the baseplate configured to retain a coolant and follows a path configured to distribute the coolant in the volume throughout the baseplate. At least one fin is provided within the at least one coolant channel. The at least one fin extends from at least one of a top, a bottom, and a sidewall of the at least one coolant channel into the volume to increase a surface area of the at least one coolant channel.

Abstract: A spark suppression apparatus for a helium line in an electrostatic chuck in a plasma processing chamber is provided. The spark suppression apparatus comprises a dielectric multilumen plug in the helium line, wherein the dielectric multilumen plug has a plurality of lumens, wherein the plurality of lumens are numbered between 30 to 100,000 lumens and have a width of between 1 micron and 200 microns.

Abstract: A component of a semiconductor processing chamber formed of a metal matrix component having an anodized layer on a surface thereof. The anodized layer comprises an aluminum oxide layer and is formed over an AlSic component. The anodized layer provides the component with protection against corrosion due to plasma processing gases, as the anodized layer provides a protective coating. A layer of aluminum is plated over a surface of the component and the aluminum layer is subsequently anodized to form the protective layer.

Abstract: A substrate support for a substrate processing system includes a baseplate and a spray coat layer arranged on the baseplate. The spray coat layer has a first thickness and a first thermal conductivity. A bond layer is arranged on the spray coat layer. The bond layer has a second thickness and a second thermal conductivity. A ceramic layer is arranged on the bond layer. At least one of the first thickness and the second thickness varies in at least one of a radial direction and an azimuthal direction such that a third thermal conductivity between the ceramic layer and the baseplate varies in the at least one of the radial direction and the azimuthal direction.

Abstract: A baseplate for a substrate support in a substrate processing system includes at least one coolant channel formed within the baseplate. The at least one coolant channel defines a volume within the baseplate configured to retain a coolant and follows a path configured to distribute the coolant in the volume throughout the baseplate. At least one fin is provided within the at least one coolant channel The at least one fin extends from at least one of a top, a bottom, and a sidewall of the at least one coolant channel into the volume to increase a surface area of the at least one coolant channel.

Abstract: A component for use inside a semiconductor chamber with a laser textured surface facing a vacuum region inside the semiconductor chamber is provided.

Abstract: A baseplate of a substrate support assembly for supporting a semiconductor substrate in a processing chamber comprises a first component made of a first material including a metal and a nonmetal. The first material has a first coefficient of thermal expansion. A layer coating the first component is made of a second material. The second material has a second coefficient of thermal expansion. The first and second coefficients of thermal expansion are different.

Abstract: A spark suppression apparatus for a helium line in an electrostatic chuck in a plasma processing chamber is provided. The spark suppression apparatus comprises a dielectric multilumen plug in the helium line, wherein the dielectric multilumen plug has a plurality of lumens, wherein the plurality of lumens are numbered between 30 to 100,000 lumens and have a width of between 1 micron and 200 microns.

Abstract: A system for controlling a parameter of a plant associated with a substrate processing chamber is disclosed. A measuring circuit measures a response of the plant associated with the substrate processing chamber when the parameter of the plant is changed. A model generating circuit determines a delay and a gain of the plant based on the response. The model generating circuit generates a model of the plant based on the delay, the gain, and a time constant of the plant. A predicting circuit receives a set point for the parameter and a measurement of the parameter, generates a value of a prediction of the parameter based on the set point for the parameter and the measurement of the parameter using the model, wherein the value of the prediction of the parameter does not include the delay, compares the value of the prediction of the parameter with the set point to generate a control signal, and controls the parameter of the plant based on the control signal.

Abstract: A system for controlling a parameter of a plant associated with a substrate processing chamber is disclosed. A measuring module measures a response of the plant associated with the substrate processing chamber when the parameter of the plant is changed. A model generating module determines a delay and a gain of the plant based on the response. The model generating module generates a model of the plant based on the delay, the gain, and a time constant of the plant. A predicting module receives a set point for the parameter and a measurement of the parameter, generates a prediction of a delay-free value of the parameter based on the set point for the parameter and the measurement of the parameter using the model, compares the prediction with the set point to generate a control signal, and controls the parameter of the plant based on the control signal.