Abstract: A torchiere style sanitizing device for disinfecting airborne pathogens while providing aesthetic area lighting. A reversible fan exchanges air between the upper room air plume and the lower air plume by passing the air through a center disinfecting section. The disinfection section may include a linear UV-C light, reflective tube, and light trap positioned at one or both ends of the disinfection section to maximize the exposure of the air to the UV-C light and contain the UV-C light within the device. The device includes a conventional illumination source in an upper shade and can selectively provide one of more of room air flow, room air disinfection, and room illumination.

Abstract: A method for synthesizing a phosphonic acid functionalized mesoporous metal oxide material (e.g., silica, titania, alumina, preferably silica material) is provided. Further, a method of using the phosphonic acid functionalized mesoporous silica material as a solid acid catalyst in a pinicole-pinacolone rearrangement reaction, and a method of using a phosphonic acid functionalized mesoporous silica material as a solid acid catalyst in a transesterification reaction is provided. A method for preparing a mesoporous titania film for use in a dye sensitized solar cell is also provided.

Abstract: An inflatable watercraft is provided with multiple reinforced panels that are configured to form a center hull having a V-form. The center hull supports a floor that is coupled to a U-form collar. The panels also form a pair of outer side hulls respectively disposed on opposite sides of the center hull and which define a tunnel between the center hull and each of the outer side hulls.

Abstract: A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface.

Abstract: A method for synthesizing a phosphonic acid functionalized mesoporous metal oxide material (e.g., silica, titania, alumina, preferably silica material) is provided. Further, a method of using the phosphonic acid functionalized mesoporous silica material as a solid acid catalyst in a pinicole-pinacolone rearrangement reaction, and a method of using a phosphonic acid functionalized mesoporous silica material as a solid acid catalyst in a transesterification reaction is provided. A method for preparing a mesoporous titania film for use in a dye sensitized solar cell is also provided.

Abstract: A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

Abstract: A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface.

Abstract: The present invention provides a radiofrequency plasma apparatus for the production of nanoparticles and method for producing nanoparticles using the apparatus. The apparatus is designed to provide high throughput and makes the continuous production of bulk quantities of high-quality crystalline nanoparticles possible. The electrode assembly of the plasma apparatus includes an outer electrode and a central electrode arranged in a concentric relationship to define an annular flow channel between the electrodes.

Abstract: A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.