Patents by Inventor Eric Scott Moyer
Eric Scott Moyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9023433Abstract: A silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin has the formula (PhSiO(3-x)/2(OR?)x)m(HSiO(3-x)/2(OR?)x)n(MeSiO(3-x)/2(OR?)x)o(RSiO(3-x)/2(OR?)x)p and a method of forming an antireflective coating on an electronic device comprising applying to an electronic device an antireflective coating composition comprising the silsesquioxane resin and a solvent, and removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.Type: GrantFiled: November 18, 2008Date of Patent: May 5, 2015Assignee: Dow Corning CorporationInventors: Peng-Fei Fu, Eric Scott Moyer
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Patent number: 8828252Abstract: A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).Type: GrantFiled: June 22, 2010Date of Patent: September 9, 2014Assignee: Dow Corning CorporationInventors: Michael L. Bradford, Eric Scott Moyer, Kasumi Takeuchi, Sheng Wang, Craig Rollin Yeakle
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Patent number: 8785113Abstract: A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).Type: GrantFiled: June 22, 2010Date of Patent: July 22, 2014Assignee: Dow Corning CorporationInventors: Michael L. Bradford, Eric Scott Moyer, Sheng Wang
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Patent number: 8728335Abstract: A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).Type: GrantFiled: June 22, 2010Date of Patent: May 20, 2014Assignee: Dow Corning CorporationInventors: Peng-Fei Fu, Eric Scott Moyer, Jason D. Suhr
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Patent number: 8658284Abstract: A polysilane-polysilazane copolymer contains a polysilane unit of formula (I), and a polysilazane unit of formula (II), where each R1 and each R2 are each independently selected from H, Si, and N atoms, R3 is selected from H, Si, or C atoms, a?1, b?1, and a quantity (a+b)?2. The polysilane-polysilazane copolymer may be formulated in a composition with a solvent. The polysilane-polysilazane copolymer may be used in PMD and STI applications for trench filling, where the trenches have widths of 100 nm or less and aspect ratios of at least (6). The polysilane-polysilazane copolymer can be prepared by amination of a perchloro polysilane having (2) or more silicon atoms per molecule with a primary amine.Type: GrantFiled: October 25, 2010Date of Patent: February 25, 2014Assignee: Dow Corning CorporationInventors: Wei Chen, Eric Scott Moyer, Binh Thanh Nguyen, Sheng Wang, Mark A. Wanous, Xiaobing Zhou
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Patent number: 8653217Abstract: A method of forming an antireflective coating on an electronic device comprising (A) applying to an electronic device an ARC composition comprising (i) a silsesquioxane resin having the formula (PhSiO(3-X)/2(OH)x)mHSiO(3-x)/2(OH)x)N(MeSiO(3-x)/2(OH)x)p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, and m+n+p?1; and (ii) a solvent; and (B) removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.Type: GrantFiled: August 18, 2011Date of Patent: February 18, 2014Assignee: Dow Corning CorporationInventors: Peng-Fei Fu, Eric Scott Moyer, Craig Rollin Yeakle
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Patent number: 8648125Abstract: Disclosed is silsesquioxane resin composition that contains a free radical curable functional group that is stabilized with a hydrophilic inhibitor. The hydrophilic inhibitor that has the capability to scavenge free radicals such as ascorbic acid or salicylic acid is used to stabilize the resin. The resins are useful in semiconductor formation such as for anti-reflective coatings, hardmasks or photoresist layers.Type: GrantFiled: December 2, 2010Date of Patent: February 11, 2014Assignee: Dow Corning CorporationInventors: Andrew MacMillan, Eric Scott Moyer, Michael Robert Reiter, Kasumi Takeuchi, Sheng Wang, Craig Rollin Yeakle
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Patent number: 8524439Abstract: A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.Type: GrantFiled: June 27, 2007Date of Patent: September 3, 2013Assignees: Dow Corning Corporation, Tokyo Ohka Kogyo Co., Ltd.Inventors: Sanlin Hu, Eric Scott Moyer
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Publication number: 20130189495Abstract: A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods.Type: ApplicationFiled: November 7, 2011Publication date: July 25, 2013Applicant: The Regents of the University of MichiganInventors: Peng-Fei Fu, Lingjie Jay Guo, Eric Scott Moyer, Carlos Pina-Hernandez
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Patent number: 8377634Abstract: This invention relates to acrylic functional resin compositions. More particularly, this invention relates to Poly [organ-co-(meth)acryloxyorgano]silsequioxane resins that are curable upon exposure to ultraviolet radiation with photo initiator or upon heating with or without a free radical generator. The resin compositions have high storage stability at room temperature and produces films that are useful as planarization layer, interlayer dielectric, passivation layer, gas permeable layer, negative photoresist, antireflective coating, conformal coating and IC packaging.Type: GrantFiled: June 3, 2005Date of Patent: February 19, 2013Assignee: Dow Corning CorporationInventors: John Dean Albaugh, Gregory Scott Becker, Sina Maghsoodi, Eric Scott Moyer, Sheng Wang, Craig Rollin Yeakle
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Patent number: 8304161Abstract: A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR?)x)m, (HSiO(3-x)/2(OR?)x)n?(MeSiO(3-x)/2(OR?)x)o?(RSiO(3-x)/2(OR?)x)p, (R1SiO(3-x)/2(OR?)x)q where Ph is a phenyl group, Me is a methyl group; R? is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.Type: GrantFiled: February 3, 2009Date of Patent: November 6, 2012Assignee: Dow Corning CorporationInventors: Michael L. Bradford, Eric Scott Moyer, Sheng Wang, Craig Rollin Yeakle
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Publication number: 20120252920Abstract: Disclosed is silsesquioxane resin composition that contains a free radical curable functional group that is stabilized with a hydrophilic inhibitor. The hydrophilic inhibitor that has the capability to scavenge free radicals such as ascorbic acid or salicylic acid is used to stabilize the resin. The resins are useful in semiconductor formation such as for anti-reflective coatings, hardmasks or photoresist layers.Type: ApplicationFiled: December 2, 2010Publication date: October 4, 2012Inventors: Andrew MacMillan, Eric Scott Moyer, Michael Robert Reiter, Kasumi Takeuchi, Sheng Wang, Craig Rollin Yeakle
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Patent number: 8263312Abstract: Antireflective coatings comprising (i) a silsesquioxane resin having the formula (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p=1; (ii) a polyethylene oxide fluid; and (iii) a solvent; and a method of forming said antireflective coatings on an electronic device.Type: GrantFiled: December 7, 2006Date of Patent: September 11, 2012Assignee: Dow Corning CorporationInventors: Peng-Fei Fu, Eric Scott Moyer
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Publication number: 20120214006Abstract: A polysilane?polysilazane copolymer contains a polysilane unit of formula (I), and a polysilazane unit of formula (II), where each R1 and each R2 are each independently selected from H, Si, and N atoms, R3 is selected from H, Si, or C atoms, a?1, b?1, and a quantity (a+b)?2. The polysilane?polysilazane copolymer may be formulated in a composition with a solvent. The polysilane-polysilazane copolymer may be used in PMD and STI applications for trench filling, where the trenches have widths of 100 nm or less and aspect ratios of at least (6). The polysilane?polysilazane copolymer can be prepared by amination of a perchloro polysilane having (2) or more silicon atoms per molecule with a primary amine.Type: ApplicationFiled: October 25, 2010Publication date: August 23, 2012Inventors: Wei Chen, Eric Scott Moyer, Binh Thanh Nguyen, Sheng Wang, Mark A. Wanous, Xiaobing Zhou
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Patent number: 8241707Abstract: This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin is comprised of the units (Ph(CH2)rSiO(3?x)/2(OR?)x)m (HSiO(3?x)/2(OR?)x)n (MeSiO(3?x)/2(OR?)x)o (RSiO(3?x)/2(OR?)x)p (R1SiO(3?x)/2(OR?)x)q where Ph is a phenyl group, Me is a methyl group; R? is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a hydroxyl producing group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q?1.Type: GrantFiled: February 3, 2009Date of Patent: August 14, 2012Assignee: Dow Corning CorporationInventors: Peng-Fei Fu, Eric Scott Moyer
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Publication number: 20120118856Abstract: A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).Type: ApplicationFiled: June 22, 2010Publication date: May 17, 2012Inventors: Peng-Fei Fu, Eric Scott Moyer, Jason D. Suhr
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Publication number: 20120122037Abstract: A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).Type: ApplicationFiled: June 22, 2010Publication date: May 17, 2012Inventors: Michael L. Bradford, Eric Scott Moyer, Sheng Wang
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Publication number: 20120123135Abstract: A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).Type: ApplicationFiled: June 22, 2010Publication date: May 17, 2012Inventors: Michael L. Bradford, Eric Scott Moyer, Kasumi Takeuchi, Sheng Wang, Craig Rollin Yeakle
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Patent number: 8148043Abstract: Silsesquioxane-based compositions that contain (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) least one organic base additive selected from bulky tertiary amines, imides, amides and the polymeric amines wherein the organic base additive contains an electron-attracting group with the provision that the organic base additive is not 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.Type: GrantFiled: June 27, 2007Date of Patent: April 3, 2012Assignee: Dow Corning CorporationInventors: Sanlin Hu, Eric Scott Moyer
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Patent number: 8088547Abstract: A resist composition comprising (A) a hydrogen silsesquioxane resin, (B) an acid dissociable group-containing compound, (C) a photo-acid generator, (D) an organic solvent and optionally (E) additives. The resist composition has improved lithographic properties (such as high etch-resistance, transparency, resolution, sensitivity, focus latitude, line edge roughness, and adhesion) suitable as a photoresist.Type: GrantFiled: September 20, 2005Date of Patent: January 3, 2012Assignee: Dow Corning CorporationInventors: Sanlin Hu, Sina Maghsoodi, Eric Scott Moyer, Sheng Wang