Abstract: Embodiments in accordance with the present invention relate to the fabrication of thin (>1 ?m) polycrystalline, nanocrystalline, or amorphous silicon films on a substrate. Particular embodiments utilize liquid sources of silane, including but not limited to cyclohexasilane (CHS), cyclopentasilane (CPS) or related derivatives of these compounds. In one embodiment, the silane is applied in liquid form contained by the use of a series of raised walls. Subsequent polymerization results in the material being a solid form. In other embodiments, the silane is applied as a liquid which is then frozen, with subsequent localized melting allowing polymerization to convert the material into a stable solid form. Embodiments of the present invention are particularly suited for forming thick (>10 ?m) silicon films needed to achieve light absorption efficiencies deemed acceptable for thin film photovoltaic devices.