Abstract: Various magnetic thin film inductor structures are disclosed that include one or more magnetic thin film (MTF) materials. During operation, an electric field passes through one or more conductive windings which, in turn, generates a magnetic field for storing energy within these magnetic thin film inductor structures. The magnetic thin film (MTF) materials within these magnetic thin film inductor structures effectively attract magnetic flux lines of this magnetic field. As a result, any magnetic leakage resulting from the magnetic field generated by these magnetic thin film inductor structures onto nearby electrical, mechanical, and/or electro-mechanical devices is lessened when compared to magnetic leakage resulting from the magnetic field generated by other inductor structures not having the one or more MTF materials.

Abstract: Various magnetic thin film inductor structures are disclosed that include one or more magnetic thin film (MTF) materials. During operation, an electric field passes through one or more conductive windings which, in turn, generates a magnetic field for storing energy within these magnetic thin film inductor structures. The magnetic thin film (MTF) materials within these magnetic thin film inductor structures effectively attract magnetic flux lines of this magnetic field. As a result, any magnetic leakage resulting from the magnetic field generated by these magnetic thin film inductor structures onto nearby electrical, mechanical, and/or electro-mechanical devices is lessened when compared to magnetic leakage resulting from the magnetic field generated by other inductor structures not having the one or more MTF materials.

Abstract: An integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack, a first conductor and a second conductor from among multiple conductors, and a via. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The via physically and electrically connects the first conductor and the second conductor. The via, the first conductor, and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.

Abstract: An integrated circuit includes a first conductive path over a substrate, a coil structure over the substrate, and a ferromagnetic ring. The first conductive path is configured to generate a first time-varying magnetic field based on a first time-varying current. The coil structure is configured to generate an induced electrical potential responsive to the first time-varying magnetic field. The ferromagnetic ring includes an open portion. The first conductive path extending through the open portion of the ferromagnetic ring. The first conductive path includes a first conductive line on a first level that is below the ferromagnetic ring, a second conductive line on a second level that is above the ferromagnetic ring, and a first via on a third level that is coplanar with the ferromagnetic ring, the first via electrically coupling the first conductive line and the second conductive line together.

Abstract: Voltage reference circuits are provided. A voltage reference circuit includes a transistor, a flipped-gate transistor, a first current mirror unit, a second current mirror unit, and an output note. A gate and a drain of the flipped-gate transistor are coupled to a gate and a drain of the transistor. A bulk and a source of the flipped-gate transistor are coupled to a ground. The first current mirror unit is configured to provide a first current to the flipped-gate transistor and a mirroring current in response to a bias current. The second current mirror unit is configured to drain a second current from the first transistor in response to the mirroring current. The output node is coupled to a source of the transistor and the second current mirror unit, and configured to output a reference voltage. Size of the flipped-gate transistor is less than that of the first transistor.

Abstract: A method for forming an integrated transformer is disclosed. The integrated transformer includes a magnetic core situated in a first layer from among multiple layers of a semiconductor layer stack and a first conductor and a second conductor from among multiple conductors. The first conductor is situated within a second layer, above the first layer, from among the multiple layers of the semiconductor layer stack. The second conductor is situated within a third layer, below the first layer, from among the multiple layers of the semiconductor layer stack. The first conductor and the second conductor form a primary winding of the integrated transformer. The integrated transformer additionally includes a secondary winding, wrapped around the magnetic core, situated in the first layer, the second layer, and the third layer.

Abstract: A duty cycle measurement (DCM) device includes a charge pump circuit and a clocked comparator circuit. The charge pump circuit is configured to receive a clock signal that has an unknown duty cycle and to generate a capacitor voltage based on the duty cycle of the clock signal. The clocked comparator circuit is configured to receive the capacitor voltage and a reference voltage and to generate a digital output code based on the capacitor voltage and the reference voltage. The digital output code is indicative of the duty cycle of the clock signal. The charge pump circuit is further configured to receive the digital output code. A method of determining a duty cycle of a clock signal is also disclosed.

Abstract: An analog-to-digital converter (ADC) includes a first ADC stage with a first sub-ADC stage configured to sample the analog input voltage in response to a first phase clock signal and output a first digital value corresponding to an analog input voltage in response to a second phase clock signal. A current mode DAC stage is configured to convert the analog input voltage and the first digital value to respective first and second current signals, determine a residue current signal representing a difference between the first and the second current signal, and convert the residue current signal to an analog residual voltage signal. A second ADC stage is coupled to the first ADC stage to receive the analog residual voltage signal, and convert the analog residue voltage signal to a second digital value. An alignment and digital error correction stage is configured to combine the first and the second digital values.

Abstract: A power converter module includes a ground terminal, an input voltage terminal configured to receive a raw input voltage, and an interconnection terminal configured to provide a regulated output voltage to a load such as a SOC or SIP system to be powered. A voltage regulator is connected to the ground terminal and the input voltage terminal. An inductor has an inductor output connected to the interconnection terminal.

Abstract: A duty cycle measurement (DCM) device includes a charge pump circuit and a clocked comparator circuit. The charge pump circuit is configured to receive a clock signal that has an unknown duty cycle and to generate a capacitor voltage based on the duty cycle of the clock signal. The clocked comparator circuit is configured to receive the capacitor voltage and a reference voltage and to generate a digital output code based on the capacitor voltage and the reference voltage. The digital output code is indicative of the duty cycle of the clock signal. The charge pump circuit is further configured to receive the digital output code. A method of determining a duty cycle of a clock signal is also disclosed.

Abstract: An apparatus and method for analog to digital conversion of analog input signals are disclosed herein. In some embodiments, an analog-to-digital (ADC) may comprise: a first successive approximation register (SAR) circuit comprising a fast SAR (FSAR) circuit and a residue digital-to-analog converter (RDAC) circuit and a residue amplifier circuit, coupled to the RDAC circuit, comprising an amplifier circuit that is configured to amplify a residual signal generated by the RDAC circuit, wherein the amplifier circuit comprises a deadzone control circuit and a first, second and third inverter stages, wherein the third stage is biased to operate in a sub-threshold region.

Abstract: An amplifier includes an input circuit configured to receive an analog input signal and a feedback signal, and output an analog error signal based on the analog input signal and the feedback signal. An ADC is configured to convert the analog error signal into a digital signal in a phase domain. A digital control circuit is configured to generate a digital control signal based on the digital signal in the phase domain. An output circuit is configured to generate an amplified output signal based on the digital control signal, and a feedback circuit is configured generate the feedback signal based on the amplified output signal.

Abstract: A power converter module includes a ground terminal, an input voltage terminal configured to receive a raw input voltage, and an interconnection terminal configured to provide a regulated output voltage to a load such as a SOC or SIP system to be powered. A voltage regulator is connected to the ground terminal and the input voltage terminal. An inductor has an inductor output connected to the interconnection terminal.

Abstract: An analog-to-digital converter (“ADC”) includes an input terminal configured to receive an analog input signal. A first ADC circuit is coupled to the input terminal and includes a VCO. The first ADC circuit is configured to output a first digital signal in a frequency domain based on the analog input signal. The first digital signal includes an error component. A first DAC is configured to convert the first digital signal to an analog output signal. A first summation circuit is configured to receive the analog output signal, the analog input signal, and a loop filtered version of the analog input signal and extract the error component, and output a negative of the error component. A second ADC circuit is configured to convert the negative of the error component to a digital error signal. A second summation circuit is configured to receive the first digital signal and the digital error signal, and to output a digital output signal corresponding to the analog input at an output terminal.

Abstract: An analog-to-digital converter (“ADC”) includes an input terminal configured to receive an analog input signal. A first ADC circuit is coupled to the input terminal and includes a VCO. The first ADC circuit is configured to output a first digital signal in a frequency domain based on the analog input signal. The first digital signal includes an error component. A first DAC is configured to convert the first digital signal to an analog output signal. A first summation circuit is configured to receive the analog output signal, the analog input signal, and a loop filtered version of the analog input signal and extract the error component, and output a negative of the error component. A second ADC circuit is configured to convert the negative of the error component to a digital error signal. A second summation circuit is configured to receive the first digital signal and the digital error signal, and to output a digital output signal corresponding to the analog input at an output terminal.

Abstract: Voltage reference circuits are provided. A voltage reference circuit includes a transistor, a flipped-gate transistor, a first current mirror unit, a second current mirror unit, and an output note. A gate and a drain of the flipped-gate transistor are coupled to a gate and a drain of the transistor. A bulk and a source of the flipped-gate transistor are coupled to a ground. The first current mirror unit is configured to provide a first current to the flipped-gate transistor and a mirroring current in response to a bias current. The second current mirror unit is configured to drain a second current from the first transistor in response to the mirroring current. The output node is coupled to a source of the transistor and the second current mirror unit, and configured to output a reference voltage. Size of the flipped-gate transistor is less than that of the first transistor.

Abstract: A three-dimensional integrated circuit (3D IC) package is provided. The 3D IC package includes: a cache die including a low-dropout (LDO) regulator and a cache memory device; a compute die above the cache die, the compute die including a processor; and one or more first interconnect structures connecting the cache die and the compute die in a vertical direction.

Abstract: An integrated circuit includes a first conductive path over a substrate, a coil structure over the substrate, and a ferromagnetic ring. The first conductive path is configured to generate a first time-varying magnetic field based on a first time-varying current. The coil structure is configured to generate an induced electrical potential responsive to the first time-varying magnetic field. The ferromagnetic ring includes an open portion. The first conductive path extending through the open portion of the ferromagnetic ring. The first conductive path includes a first conductive line on a first level that is below the ferromagnetic ring, a second conductive line on a second level that is above the ferromagnetic ring, and a first via on a third level that is coplanar with the ferromagnetic ring, the first via electrically coupling the first conductive line and the second conductive line together.

Abstract: An amplifier includes an input circuit configured to receive an analog input signal and a feedback signal, and output an analog error signal based on the analog input signal and the feedback signal. An ADC is configured to convert the analog error signal into a digital signal in a phase domain. A digital control circuit is configured to generate a digital control signal based on the digital signal in the phase domain. An output circuit is configured to generate an amplified output signal based on the digital control signal, and a feedback circuit is configured generate the feedback signal based on the amplified output signal.

Abstract: Voltage reference circuits are provided. A voltage reference circuit includes a first transistor, a flipped-gate transistor, a first current mirror unit, a second current mirror unit, and an output note. The first transistor is formed by a plurality of second transistors. A gate and a drain of the flipped-gate transistor are coupled to a gate and a drain of each second transistor. The first current mirror unit is configured to provide a first current to the flipped-gate transistor and a mirroring current in response to a bias current. The second current mirror unit is configured to drain a second current from the first transistor in response to the mirroring current. The output node is coupled to a source of each second transistor and the second current mirror unit, and configured to output a reference voltage. Size of the flipped-gate transistor is less than that of the first transistor.