Patents by Inventor Eric Stiers

Eric Stiers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080269034
    Abstract: The invention relates to a nested pair of blanks on a unitary sheet which minimizes the amount of scrap sheet material (i.e., sheet scrap) upon separation of the blanks and construction of containers formed from the blanks. The nested pair of blanks provides a first blank for forming a container, a second blank for forming an identical container, and a non-linear separation interface that connects the first and second blanks to one another in a rotationally inverted relationship. The nested configuration reduces the amount of sheet scrap in the sheet. The invention further relates to a container formed from the first or second blank having features that reduce sheet scrap and offset the potential weakening of the container bottom resulting from reduced overlapping sheet material.
    Type: Application
    Filed: April 25, 2007
    Publication date: October 30, 2008
    Inventor: David Eric Stier
  • Publication number: 20080089375
    Abstract: A semiconductor laser diode comprises a p-n junction. The p-n junction comprises a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and a quantum well. The quantum well is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The substrate is formed from a first material system, the n-type semiconductor layer is formed from a second material system, the p-type semiconductor layer is formed from a third material system, and the quantum well is formed from a fourth material system. The second material system is different from the third material system. The second material system and the third material system are selected such that there is an increase in the rate of recombinations of the electrons from the n-type semiconductor layer and the holes from the p-type semiconductor layer in the quantum well. This results in a lower turn-on voltage for the semiconductor laser diode.
    Type: Application
    Filed: October 11, 2005
    Publication date: April 17, 2008
    Inventors: Manoj Kanskar, Thomas Earles, Eric Stiers