Patents by Inventor Eric T. Stubbs
Eric T. Stubbs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20010028112Abstract: An embodiment of the present invention discloses a memory device having an array with digit lines arranged in complementary pairs, the array comprising; a substantially planar layer having trenches therein; a first level of digit lines residing at least partially in the trenches; a second level of digit lines residing on the surface of the layer, the second level extending in generally parallel relation to the digit lines in the first level. The first level of digit lines are in alternating positions with the second level of digit lines and the alternating positions comprise a repeating pattern of a first complementary pair of digit lines at the first level adjacent a second complementary pair of digit lines at the second level.Type: ApplicationFiled: June 18, 2001Publication date: October 11, 2001Inventors: Kin F. Ma, Eric T. Stubbs
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Patent number: 6286115Abstract: An integrated circuit includes an embedded memory device and an on-chip test circuit. The on-chip test circuit includes a multiplexer and one or more I/O circuits. The multiplexer allows the I/O circuits to interface with a plurality of inputs and outputs associated with the embedded memory device. As a result, the embedded memory device in the integrated circuit may be tested or repaired after the embedded memory array portion of the integrated circuit is formed, yet prior to fabrication of dedicated input/output circuitry. This allows evaluation of the embedded memory device in the integrated circuit prior to committing resources to complete fabrication of the entire integrated circuit.Type: GrantFiled: June 29, 1998Date of Patent: September 4, 2001Assignee: Micron Technology, Inc.Inventor: Eric T. Stubbs
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Publication number: 20010009522Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: July 26, 2001Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6259162Abstract: An embodiment of the present invention discloses a memory device having an array with digit lines arranged in complementary pairs, the array comprising; a substantially planar layer having trenches therein; a first level of digit lines residing at least partially in the trenches; a second level of digit lines residing on the surface of the layer, the second level extending in generally parallel relation to the digit lines in the first level. The first level of digit lines are in alternating positions with the second level of digit lines and the alternating positions comprise a repeating pattern of a first complementary pair of digit lines at the first level adjacent a second complementary pair of digit lines at the second level.Type: GrantFiled: September 9, 1998Date of Patent: July 10, 2001Assignee: Micron Technology, Inc.Inventors: Kin F. Ma, Eric T. Stubbs
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Publication number: 20010004333Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: June 21, 2001Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Publication number: 20010002888Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: June 7, 2001Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Publication number: 20010002889Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: June 7, 2001Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6226210Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: January 12, 2000Date of Patent: May 1, 2001Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6198676Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: January 11, 2000Date of Patent: March 6, 2001Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6188622Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: January 13, 2000Date of Patent: February 13, 2001Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6181617Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: January 14, 2000Date of Patent: January 30, 2001Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D Bruce, Eric T. Stubbs
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Patent number: 6052322Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: July 28, 1999Date of Patent: April 18, 2000Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6028799Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: March 1, 1999Date of Patent: February 22, 2000Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6026040Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: March 1, 1999Date of Patent: February 15, 2000Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6011731Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: March 1, 1999Date of Patent: January 4, 2000Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 5982687Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: March 1, 1999Date of Patent: November 9, 1999Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 5923672Abstract: An address detection circuit includes for each bit to be detected, a plurality of antifuse legs connected in parallel. Each of the antifuse legs includes a separate isolation transistor, so that each of the antifuse legs can be separately disabled. For blowing, only one of the antifuse legs is enabled at a time. During conventional operation, all of the antifuse legs are enabled so that the overall resistance of the antifuse legs equals the parallel combination of the resistances of the blown antifuses. Because the parallel combination of the blown antifuses is always less than or equal to the lower of the resistances of the antifuses, only one of the antifuses need be blown properly for the parallel combination to operate properly.Type: GrantFiled: June 4, 1997Date of Patent: July 13, 1999Assignee: Micron Technology, Inc.Inventors: Gordon D. Roberts, Jeffrey D. Bruce, Kurt D. Beigel, Eric T. Stubbs
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Patent number: 5877993Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: May 13, 1997Date of Patent: March 2, 1999Assignee: Micron Technology, Inc.Inventors: Kurt D. Biegel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 5854128Abstract: An embodiment of the present invention discloses a memory device having an array with digit lines arranged in complementary pairs, the array comprising; a substantially planar layer having trenches therein; a first level of digit lines residing at least partially in the trenches; a second level of digit lines residing on the surface of the layer, the second level extending in generally parallel relation to the digit lines in the first level. The first level of digit lines are in alternating positions with the second level of digit lines and the alternating positions comprise a repeating pattern of a first complementary pair of digit lines at the first level adjacent a second complementary pair of digit lines at the second level.Type: GrantFiled: April 29, 1996Date of Patent: December 29, 1998Assignee: Micron Technology, Inc.Inventors: Kin F. Ma, Eric T. Stubbs