Abstract: A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more semiconductor materials and defines a wafer size that is equal to or larger than the semiconductor crystalline substrate for further wafer processing. The process also provides a unique platform for heterogeneous integration of diverse material systems and device technologies onto one single substrate.

Abstract: Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.

Abstract: Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.

Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more semiconductor materials and defines a wafer size that is equal to or larger than the semiconductor crystalline substrate for further wafer processing. The process also provides a unique platform for heterogeneous integration of diverse material systems and device technologies onto one single substrate.

Abstract: Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.

Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: In one embodiment of the invention, a computer-implemented method of configuring a programmable logic device (PLD) includes placing logical functions within logical resources of the PLD to implement a desired netlist; swapping the logical function of at least one logical resource with the logical function of at least one other logical resource within the PLD; and evaluating whether to accept or reject the swap using a simulated annealing process that calculates at least three cost function values based upon routing priority groups, timing priority groups, and a timing critical group.

Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.