Patents by Inventor Eric Ting

Eric Ting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190218680
    Abstract: A counterfeiting deterrent device according to one implementation of the disclosure includes a plurality of layers formed by an additive process. Each of the layers may have a thickness of less than 100 microns. At least one of the layers has a series of indentations formed in an outer edge of the layer such that the indentations can be observed to verify that the device originated from a predetermined source. According to another implementation, a counterfeiting deterrent device includes at least one raised layer having outer edges in the shape of a logo. A light source is configured and arranged to shine a light through a slit in a substrate layer of the device and past an intermediate layer to light up the outer edge of the raised layer. The layers of the device are formed by an additive process and have a thickness of less than 100 microns each.
    Type: Application
    Filed: November 7, 2018
    Publication date: July 18, 2019
    Applicant: Microfabrica Inc.
    Inventors: Gregory P. Schmitz, Michael S. Lockard, Ming-Ting Wu, Eric C. Miller, Adam L. Cohen
  • Patent number: 9023729
    Abstract: A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more semiconductor materials and defines a wafer size that is equal to or larger than the semiconductor crystalline substrate for further wafer processing. The process also provides a unique platform for heterogeneous integration of diverse material systems and device technologies onto one single substrate.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: May 5, 2015
    Assignee: Athenaeum, LLC
    Inventor: Eric Ting-Shan Pan
  • Publication number: 20140374924
    Abstract: Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.
    Type: Application
    Filed: August 29, 2014
    Publication date: December 25, 2014
    Inventor: Eric Ting-Shan Pan
  • Patent number: 8822309
    Abstract: Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: September 2, 2014
    Assignee: Athenaeum, LLC
    Inventor: Eric Ting-Shan Pan
  • Patent number: 8673752
    Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: March 18, 2014
    Assignee: Athenaeum, LLC
    Inventor: Eric Ting-Shan Pan
  • Patent number: 8541294
    Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: September 24, 2013
    Assignee: Athenaeum LLC
    Inventor: Eric Ting-Shan Pan
  • Patent number: 8530342
    Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: September 10, 2013
    Assignee: Athenaeum, LLC
    Inventor: Eric Ting-Shan Pan
  • Patent number: 8507370
    Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: August 13, 2013
    Assignee: Athenaeum LLC
    Inventor: Eric Ting-Shan Pan
  • Patent number: 8507371
    Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: August 13, 2013
    Assignee: Athenaeum LLC
    Inventor: Eric Ting-Shan Pan
  • Publication number: 20130200429
    Abstract: A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more semiconductor materials and defines a wafer size that is equal to or larger than the semiconductor crystalline substrate for further wafer processing. The process also provides a unique platform for heterogeneous integration of diverse material systems and device technologies onto one single substrate.
    Type: Application
    Filed: December 21, 2012
    Publication date: August 8, 2013
    Inventor: Eric Ting-Shan Pan
  • Publication number: 20130161834
    Abstract: Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.
    Type: Application
    Filed: December 21, 2012
    Publication date: June 27, 2013
    Inventor: Eric Ting-Shan Pan
  • Patent number: 8430056
    Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: April 30, 2013
    Assignee: Athenseum, LLC
    Inventor: Eric Ting-Shan Pan
  • Publication number: 20120238084
    Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Application
    Filed: June 4, 2012
    Publication date: September 20, 2012
    Inventor: Eric Ting-Shan Pan
  • Publication number: 20120238083
    Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Application
    Filed: June 4, 2012
    Publication date: September 20, 2012
    Inventor: Eric Ting-Shan Pan
  • Publication number: 20120238078
    Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Application
    Filed: June 4, 2012
    Publication date: September 20, 2012
    Inventor: Eric Ting-Shan Pan
  • Publication number: 20120238080
    Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Application
    Filed: June 4, 2012
    Publication date: September 20, 2012
    Inventor: Eric Ting-Shan Pan
  • Publication number: 20120238079
    Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Application
    Filed: June 4, 2012
    Publication date: September 20, 2012
    Inventor: Eric Ting-Shan Pan
  • Patent number: 8193078
    Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Grant
    Filed: October 28, 2009
    Date of Patent: June 5, 2012
    Assignee: Athenaeum, LLC
    Inventor: Eric Ting-Shan Pan
  • Patent number: 8181139
    Abstract: In one embodiment of the invention, a computer-implemented method of configuring a programmable logic device (PLD) includes placing logical functions within logical resources of the PLD to implement a desired netlist; swapping the logical function of at least one logical resource with the logical function of at least one other logical resource within the PLD; and evaluating whether to accept or reject the swap using a simulated annealing process that calculates at least three cost function values based upon routing priority groups, timing priority groups, and a timing critical group.
    Type: Grant
    Filed: December 22, 2008
    Date of Patent: May 15, 2012
    Assignee: Lattice Semicondutor Corporation
    Inventors: Xiaotao Chen, Eric Ting, Ruofan Xu, Yanhua Yi, Jun Zhao
  • Publication number: 20110247550
    Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
    Type: Application
    Filed: March 14, 2011
    Publication date: October 13, 2011
    Inventor: Eric Ting-Shan Pan