Abstract: The present invention concerns glass substrate (10) bearing a multilayer coating comprising a protective layer (P) of boron doped silicon oxide, wherein the boron doped silicon oxide comprises Si, O, B, and OH groups and wherein the boron content is comprised between 4 at 12 atomic %. The present invention further comprises a process for depositing on a glass substrate by linear hollow cathode type PECVD a boron doped silicon oxide layer comprising Si, O, B, and OH groups and wherein the boron content is comprised between 4 at 12 atomic %.

Abstract: The present invention concerns a polymer substrate bearing a decorative coating comprising a protective toplayer of boron doped silicon oxide, wherein the boron doped silicon oxide comprises Si, O, B, H and OH groups and wherein the boron content is comprised between 4 and 12 atomic %. The present invention further comprises a process for depositing on a polymer substrate by linear hollow cathode type PECVD a boron doped silicon oxide layer comprising Si, O, B, H and OH groups and wherein the boron content is comprised between 4 and 12 atomic %.

Abstract: The invention relates in an embodiment to a glass substrate with increased weathering and chemical resistance where a surface bears a SiOxCy coating wherein the O/Si atomic ratio is comprised between 1.75 and 1.95 and the SiOxCy coating thickness is comprised between 10 nm and 80 nm. Other embodiments relate to glazings having a glass substrate where a surface bears a SiOxCy coating wherein the O/Si atomic ratio is comprised between 1.2 and 1.95 and the SiOxCy coating thickness is comprised between 10 nm and 80 nm.

Abstract: A glass plate includes a first surface provided with a first film; and a second surface provided with a second film and opposite to the first surface. Each of the first film and the second film includes mainly tin oxide and has a sheet resistance value of 20 ?/? or less. When film thicknesses of the first and second films are ?1 nm and ?2 nm respectively, and when, in the glass plate, a haze value measured from the first surface side for a configuration provided with the first film only is H1 (%), and a haze value measured from the second surface side for a configuration provided with the second film only is H2 (%), a value of ?1 divided by H1 is 500 or more but 1200 or less, and a value of ?2 divided by H2 is 300 or more but 750 or less.

Abstract: The invention relates to triple glazing comprising at least one glass sheet that has a system of layers on one side which are produced using sputtering and include at least one metal layer that reflects infrared radiation. The at least one glass sheet has a set of low-emission layers on the other side, said set of layers comprising one or more oxide layers that are deposited using gas phase pyrolysis. The disclosed glazing has a minimum light transmittance of 60 percent (standard EN 410, illuminant D65 at 2°) with 4 mm thick glass sheets.

Abstract: An installation, comprising a chamber comprising two ends, a transport unit and a support unit which introduce a two-sided substrate into the chamber, a stabilized high-voltage high-frequency power supply of at least 200 kW, comprising an HF transformer comprising a primary and a secondary circuit connected to terminals, at least two electrodes being connected to the terminals of the secondary circuit, said electrodes being placed on each side of the substrate, at least one dielectric barrier placed between the at least two electrodes; a power supply regulation/control unit placed upstream of the HF transformer that is capable of increasing an active power/reactive power ratio, an introducing unit for introducing at least one reactive substance into the chamber, and an extracting unit for extracting residual substances, wherein an adjustable inductor is placed in the secondary circuit of the transformer in parallel with a circuit comprising the at least two electrodes, and the adjustable inductor enables a ph

Abstract: The invention relates in an embodiment to a glass substrate with increased weathering and chemical resistance where a surface bears a SiOxCy coating wherein the O/Si atomic ratio is comprised between 1.75 and 1.95 and the SiOxCy coating thickness is comprised between 10 nm and 80 nm. Other embodiments relate to glazings having a glass substrate where a surface bears a SiOxCy coating wherein the O/Si atomic ratio is comprised between 1.2 and 1.95 and the SiOxCy coating thickness is comprised between 10 nm and 80 nm.

Abstract: A glass plate includes a first surface provided with a first film; and a second surface provided with a second film and opposite to the first surface. Each of the first film and the second film includes mainly tin oxide and has a sheet resistance value of 20 ?/? or less. When film thicknesses of the first and second films are ?1 nm and ?2 nm respectively, and when, in the glass plate, a haze value measured from the first surface side for a configuration provided with the first film only is H1 (%), and a haze value measured from the second surface side for a configuration provided with the second film only is H2 (%), a value of ?1 divided by H1 is 500 or more but 1200 or less, and a value of ?2 divided by H2 is 300 or more but 750 or less.

Abstract: The invention relates to a method for producing metal or semiconductor oxide, nitride or oxynitride films on a substrate, by means of the PECVD method, including the steps that involve: (i) having a low-pressure PECVD device including at least one plasma source that includes at least one electrode connected to an AC, DC, or drawn DC generator for depositing said films on the substrate; and (ii) applying electrical power to the plasma source and applying, on the substrate, an oxide film gas precursor made of metal or semiconductor nitrides or oxynitrides and a reactive gas made of oxygen, oxygen derivatives, or nitrogen derivatives. The invention also relates to metal or semiconductor oxide, nitride, or oxynitride films obtained by the method.

Abstract: The invention relates to a transparent glass substrate having a coating including, in order: a first reflected color neutralization layer; a low-emissivity second layer essentially made up of SnO2:F and having a thickness between 455 and 800 nm; and a third layer that is essentially made up of SiOx, x being less than or equal to 2, and has a thickness between 40 and 65 nm or between 140 and 180 nm. The invention also relates to a double glass sheet and a triple glass sheet, manufactured from such a glass substrate, and to a window comprising said glass sheets.

Abstract: The present invention provides low-E thin film optical stacks with improved optical and infrared reflecting properties and methods of making the same. More specifically, the present invention provides for a metal oxide thin film coating that exhibits lower emissivity values than its predecessor due to the inclusion of an oxidizer in the metal oxide deposition process, such as a strong acid such as nitric acid. The present invention also provides for a method that increases the coating efficiencies of the thin films described herein.

Abstract: The invention relates to double glazing comprising at least one glass sheet that has a set of low-emission layers on each side, one side being coated with layers which are produced using sputtering and which include at least one metal layer that reflects infrared radiation. The other side of said at least one glass sheet comprises one or more metal oxide layers that are deposited using gas phase pyrolysis. The disclosed glazing has a minimum light transmittance of 60 percent (with 4 mm thick clear glass sheets).

Abstract: The invention relates to double glazing comprising at least one glass sheet that has a set of low-emission layers on each side, one side being coated with layers which are produced using sputtering and which include at least one metal layer that reflects infrared radiation. The other side of said at least one glass sheet comprises one or more metal oxide layers that are deposited using gas phase pyrolysis. The disclosed glazing has a minimum light transmittance of 60 percent (with 4 mm thick clear glass sheets).

Abstract: The invention relates to a device for treating the surface of a substrate by means of dielectric barrier discharge for generating a filamentary plasma, including a reaction chamber comprising a mixture having a composition such that, when in contact with the plasma, the mixture decomposes and generates species capable of deposition in the form of a layer mostly or totally on the substrate, wherein at least two electrodes area provided in said chamber, with one electrode being subjected to a high AC voltage, and are arranged on either side of the substrate, at least one dielectric barrier (DBD) arranged between said at least two electrodes, and a THT/HF transformer comprising a secondary circuit, in which a direct current (DC) power source is provided in series in the secondary circuit such that the chemical species generated in the plasma in the form of electrically positive or negative ions are selectively attracted by the target substrate inserted in the reaction chamber and arranged between said at least t

Abstract: The present invention relates to a process for preventing substrate damages in an installation for surface treatment by dielectric barrier discharge (DBD) and a surface treatment DBD installation for carrying out such process. It comprises:—detecting the amplitude of the voltage at the terminals of the electrodes and the amplitude of the current circulating between said electrodes;—defining the maximum number of alternations of voltage at the terminals of the electrodes in the presence of a hot electric arc (n max) in order not to exceed 50 Joules as dissipated energy in said substrate;—when a hot electric arc appears between said electrodes, modifying with inverse feedback the voltage at the terminals of said electrodes before the defined maximum number of alternations of voltage at the terminals of the electrodes is reached.

Abstract: The present invention relates to a process for preventing substrate damages in an installation for surface treatment by dielectric barrier discharge (DBD) and a surface treatment DBD installation for carrying out such process. It comprises:—detecting the amplitude of the voltage at the terminals of the electrodes and the amplitude of the current circulating between said electrodes;—defining the maximum number of alternations of voltage at the terminals of the electrodes in the presence of a hot electric arc (n max) in order not to exceed 50 Joules as dissipated energy in said substrate;—when a hot electric arc appears between said electrodes, modifying with inverse feedback the voltage at the terminals of said electrodes before the defined maximum number of alternations of voltage at the terminals of the electrodes is reached.

Abstract: A process for the simultaneous deposition of films onto both sides of a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (106, 206) or making said substrate run therethrough, in which chamber at least two electrodes (110, 210) are placed. At least one dielectric barrier (14, 114) is placed between these at least two electrodes (110, 210). An adjustable inductor (L) is placed in the secondary circuit of the transformer in parallel with the circuit comprising the at least two electrodes. A high-frequency electrical voltage is generated, said voltage being such that it generates a filamentary plasma (112, 212) on each side of the substrate between the at least two electrodes (110, 210).

Abstract: An installation, comprising a chamber comprising two ends, a transport unit and a support unit which introduce a two-sided substrate into the chamber, a stabilized high-voltage high-frequency power supply of at least 200 kW, comprising an HF transformer comprising a primary and a secondary circuit connected to terminals, at least two electrodes being connected to the terminals of the secondary circuit, said electrodes being placed on each side of the substrate, at least one dielectric barrier placed between the at least two electrodes; a power supply regulation/control unit placed upstream of the HF transformer that is capable of increasing an active power/reactive power ratio, an introducing unit for introducing at least one reactive substance into the chamber, and an extracting unit for extracting residual substances, wherein an adjustable inductor is placed in the secondary circuit of the transformer in parallel with a circuit comprising the at least two electrodes, and the adjustable inductor enables a ph

Abstract: A process for depositing a film onto a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (6, 106, 206), in which at least two electrodes (10, 110, 210) are placed. A high-frequency electrical voltage is generated, said voltage being such that it generates filamentary plasma (12, 112, 212) between the two electrodes (10, 110, 210). An adjustable inductor (L) placed in parallel with the inductor of the installation generating the electrical voltage is employed so as to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112, 212).

Abstract: The invention relates to a method for producing metal or semiconductor oxide, nitride or oxynitride films on a substrate, by means of the PECVD method, including the steps that involve: (i) having a low-pressure PECVD device including at least one plasma source that includes at least one electrode connected to an AC, DC, or drawn DC generator for depositing said films on the substrate; and (ii) applying electrical power to the plasma source and applying, on the substrate, an oxide film gas precursor made of metal or semiconductor nitrides or oxynitrides and a reactive gas made of oxygen, oxygen derivatives, or nitrogen derivatives. The invention also relates to metal or semiconductor oxide, nitride, or oxynitride films obtained by the method.