Abstract: The invention relates to an optoelectronic component (1) that is insensitive to dislocations, comprising: a semiconductor heterostructure (2) able to emit laser radiation, said semiconductor heterostructure being formed from first semiconductors comprising a cascade of gain-providing active regions (21) in which the inter-band radiative transition is of type II, and a carrier structure (30) comprising a non-native substrate (3) different from the first semiconductors, said semiconductor heterostructure (2) being formed by epitaxial growth on the carrier structure (30), wherein the active regions have a dislocation density higher than 107 .cm?2.

Abstract: An active zone for a light emission system including a series of layers at least a portion of which consists of antimony semiconductors III-V. The layers are arranged to form at least one quantum well surrounded by barriers for generating a light emission. The active zone also includes at least one layer forming an intermediate barrier arranged relative to the quantum well to form at least two quantum sub-wells coupled with each other. A heterostructure including at least one optical confinement layer surrounding at least one active zone; a laser emission system including one heterostructure deposited onto a substrate; and the use of an active zone for emitting a light beam having a wavelength of 1.55 ?m are disclosed.

Abstract: An active zone for a light emission system including a series of layers at least a portion of which consists of antimony semiconductors III-V. The layers are arranged to form at least one quantum well surrounded by barriers for generating a light emission. The active zone also includes at least one layer forming an intermediate barrier arranged relative to the quantum well to form at least two quantum sub-wells coupled with each other. A heterostructure including at least one optical confinement layer surrounding at least one active zone; a laser emission system including one heterostructure deposited onto a substrate; and the use of an active zone for emitting a light beam having a wavelength of 1.55 ?m are disclosed.