Abstract: The rate of oxygen precipitation in a semiconductor wafer during heat treatment is reduced by quickly inserting the wafer into a furnace which has been preheated to the heat treatment temperature. After performing the heat treatment, the wafer is slowly cooled to prevent warpage or cracking.

Abstract: A method or technique is disclosed for predicting precisely where oxygen precipitation will occur in semiconductor wafers that are being processed in connection with integrated circuit manufacture; the technique is based upon the discovery that such precipitation will occur at resistivity peaks measured prior to any thermal treatment of the wafers. In other words, the technique permits characterizing the wafers by the diametral resistivity profile that is obtained in the initial resistivity measurements, whereby a change in oxygen precipitation can be predicted precisely where compensated intrinsic regions have been measured in the initial measurements.

Abstract: A holding assembly for impact sound stressing semiconductor wafers and the like including a novel fixture for securing the wafer across a sound tube by clamping between Teflon rings. A cover membrane is also secured across the sound tube to create a closed space defined by the sound tube, cover membrane and semiconductor wafer. Tungsten spheres located in the closed space bounce between the wafer and the membrane when vibrations are propagated in the sound tube for impact sound stressing the semiconductor wafer.