Patents by Inventor Eric W. Lin

Eric W. Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • UNDERWATER USER INTERFACE
    Publication number: 20240143141
    Abstract: The present disclosure generally relates to underwater user interfaces.
    Type: Application
    Filed: January 5, 2024
    Publication date: May 2, 2024
    Inventors: Benjamin W. BYLENOK, Alan AN, Richard J. BLANCO, Andrew CHEN, Maxime CHEVRETON, Kyle B. CRUZ, Walton FONG, Ki Myung LEE, Sung Chang LEE, Cheng-I LIN, Kenneth H. MAHAN, Anya PRASITTHIPAYONG, Alyssa RAMDYAL, Eric SHI, Xuefeng WANG, Wei Guang WU
  • Monolithic, low-noise, synchronous direct detection receiver for passive microwave/millimeter-wave radiometric imaging systems
    Patent number: 6052024
    Abstract: A direct detection receiver for a passive microwave and millimeter wave radiometric imaging system. The receiver includes a balanced switch low-noise amplifier (BSLNA). A front-end, low-noise amplifier (LNA) is inserted before the BSLNA to achieve a low-noise figure, as well as provide sufficient gain to minimize the input noise figure degradation due to loss of the BSLNA. A high-electron mobility transistor (HEMT) diode is used as a power detector. The front-end amplifier, BSLNA and diode are process compatible for monolithic integration.
    Type: Grant
    Filed: August 26, 1997
    Date of Patent: April 18, 2000
    Assignee: TRW Inc.
    Inventors: Chung-Wen Dennis Lo, Barry R. Allen, Eric W. Lin, Gee Samuel Dow, Paul Shu Chung Lee
  • Monolithic, low-noise, synchronous direct detection receiver for passive microwave/millimeter-wave radiometric imaging systems
    Patent number: 5815113
    Abstract: A direct detection receiver for a passive microwave and millimeter wave radiometric imaging system. The receiver includes a balanced switch low-noise amplifier (BSLNA). A front-end, low-noise amplifier (LNA) is inserted before the BSLNA to achieve a low-noise figure, as well as provide sufficient gain to minimize the input noise figure degradation due to loss of the BSLNA. A high-electron mobility transistor (HEMT) diode is used as a power detector. The front-end amplifier, BSLNA and diode are process compatible for monolithic integration.
    Type: Grant
    Filed: August 13, 1996
    Date of Patent: September 29, 1998
    Assignee: TRW Inc.
    Inventors: Chung-Wen Dennis Lo, Barry R. Allen, Eric W. Lin, Gee Samuel Dow, Paul Shu Chung Lee