Abstract: High frequency interconnect structures, electronic assemblies that utilize high frequency interconnect structures, and methods of operating the same. The high frequency interconnect structures include a plurality of dielectric waveguides and are configured to communicatively connect a plurality of transmitters with a plurality of receivers and to convey a plurality of signals therebetween. The plurality of signals may include a plurality of electromagnetic waves and may have a frequency of at least 200 GHz. The high frequency interconnect structures further may be configured to decrease a potential for crosstalk between a first signal that is conveyed by a first dielectric waveguide of the plurality of dielectric waveguides and a second signal that is conveyed by a second dielectric waveguide of the plurality of dielectric waveguides, such as through control of a passband of the first dielectric waveguide relative to the second dielectric waveguide and/or the use of a crosstalk mitigation structure.

Abstract: Systems and methods for simultaneous optical testing of a plurality of devices under test. These systems and methods may include the use of an optical probe assembly that includes a power supply structure that is configured to provide an electric current to a plurality of devices under test (DUTs) and an optical collection structure that is configured to simultaneously collect electromagnetic radiation that may be produced by the plurality of DUTs and to provide the collected electromagnetic radiation to one or more optical detection devices. The systems and methods also may include the use of the optical probe assembly in an optical probe system to evaluate one or more performance parameters of each of the plurality of DUTs.

Abstract: Systems and methods for non-contact and/or wireless transmission of power and/or data between and/or within electronic devices. These systems and methods may include the use of two or more wireless power modules to transmit a wireless power signal between a first electronic device and a second electronic device and/or the use of two or more wireless data modules to transmit a wireless data signal between the first electronic device and the second electronic device. The wireless power modules and/or the wireless data modules may include one or more near-field coupling devices. The wireless power modules and/or wireless data modules associated with the first electronic device may be arranged in complementary locations to the wireless power modules and/or wireless data modules associated with the second electronic device and the complementary modules may be separated by a distance of less than 10 um.

Abstract: High frequency interconnect structures, electronic assemblies that utilize high frequency interconnect structures, and methods of operating the same. The high frequency interconnect structures include a plurality of dielectric waveguides and are configured to communicatively connect a plurality of transmitters with a plurality of receivers and to convey a plurality of signals therebetween. The plurality of signals may include a plurality of electromagnetic waves and may have a frequency of at least 200 GHz. The high frequency interconnect structures further may be configured to decrease a potential for crosstalk between a first signal that is conveyed by a first dielectric waveguide of the plurality of dielectric waveguides and a second signal that is conveyed by a second dielectric waveguide of the plurality of dielectric waveguides, such as through control of a passband of the first dielectric waveguide relative to the second dielectric waveguide and/or the use of a crosstalk mitigation structure.

Abstract: Systems and methods for simultaneous optical testing of a plurality of devices under test. These systems and methods may include the use of an optical probe assembly that includes a power supply structure that is configured to provide an electric current to a plurality of devices under test (DUTs) and an optical collection structure that is configured to simultaneously collect electromagnetic radiation that may be produced by the plurality of DUTs and to provide the collected electromagnetic radiation to one or more optical detection devices. The systems and methods also may include the use of the optical probe assembly in an optical probe system to evaluate one or more performance parameters of each of the plurality of DUTs.

Abstract: The tolerance of Short-Open-Load (SOL) and Short-Open-Load-Reflect (SOLR) VNA calibration for variability in probe position is improved by using load and short calibration structures having impedance elements with a length at least two times the probe contact pitch and a width at least two times the sum of the combined pitches of the probe contacts.

Abstract: A probe with integral balun enables connecting a device utilizing differential signals to a source or a sink of single ended signals.

Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Abstract: A probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies may include a dielectric substrate that supports a signal path interconnecting test instrumentation and a probe tip and a ground path that shields both the signal oath and the probe tip.

Abstract: A probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies may include a dielectric substrate that supports a signal path interconnecting test instrumentation and a probe tip and a ground path that shields both the signal path and the probe tip.

Abstract: A probe measurement system having low, stable contact resistance for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Abstract: An interconnect assembly for evaluating a probe measurement network includes a base, respective inner and outer probing areas in mutually coplanar relationship on the upper face of the base, a reference junction, and a high-frequency transmission structure connecting the probing areas and the reference junction so that high-frequency signals can be uniformly transferred therebetween. A preferred method for evaluating the signal channels of the network includes connecting a reference unit to the reference junction and successively positioning each device-probing end that corresponds to a signal channel of interest on the inner probing area.

Abstract: A shielded probe for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies. The probe may include a probe tip that extends through a dielectric substrate that supports on a first surface a signal path to test instrumentation and on a second surface a ground path that shields both the signal path and the probe tip.

Abstract: An interconnect assembly for evaluating a probe measurement network includes a base, respective inner and outer probing areas in mutually coplanar relationship on the upper face of the base, a reference junction, and a high-frequency transmission structure connecting the probing areas and the reference junction so that high-frequency signals can be uniformly transferred therebetween. A preferred method for evaluating the signal channels of the network includes connecting a reference unit to the reference junction and successively positioning each device-probing end that corresponds to a signal channel of interest on the inner probing area.

Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Abstract: An interconnect assembly for evaluating a probe measurement network includes a base, respective inner and outer probing areas in mutually coplanar relationship on the upper face of the base, a reference junction, and a high-frequency transmission structure connecting the probing areas and the reference junction so that high-frequency signals can be uniformly transferred therebetween. A preferred method for evaluating the signal channels of the network includes connecting a reference unit to the reference junction and successively positioning each device-probing end that corresponds to a signal channel of interest on the inner probing area.

Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.

Abstract: An interconnect assembly for evaluating a probe measurement network includes a base, respective inner and outer probing areas in mutually coplanar relationship on the upper face of the base, a reference junction, and a high-frequency transmission structure connecting the probing areas and the reference junction so that high-frequency signals can be uniformly transferred therebetween despite, for example, variable positioning of the device-probing ends of the network on the probing areas. A preferred method for evaluating the signal channels of the network includes connecting a reference unit to the reference junction and successively positioning each device-probing end that corresponds to a signal channel of interest on the inner probing area.

Abstract: A probe measurement system for measuring the electrical characteristics of integrated circuits or other microelectronic devices at high frequencies.