Abstract: A semiconductor device, for example an integrated circuit comprising insulate gate field effect transistors in which the gate electrodes comprise doped portions of a deposted layer of polycrystalline silicon, wherein a first conductive connection layer extends at least partly on insulating material present on one surface of a semiconductor body, said first layer being insulated from and crossing over an underlying, second conductive connection layer which is of semiconductor material locally deposited on said one surface of the semiconductor body, said second layer and the underlying portion of the semiconductor body comprising a quantity of doping substance introduced via said second layer, for example in the case of a silicon gate circuit introduced at the same time as simultaneously doping the gate electrodes and forming the source and drain regions.