Abstract: A magnetic device includes first and second electrodes and a sensor stack connected to the first and second electrodes proximate a sensing surface of the magnetic sensor. A resistive element is connected to the first and second electrodes in parallel or in series with the sensor stack and adjacent the sensing surface. In some embodiments, the resistive element is configured to generate signals related to changes in its resistance. A controller to respond to the resistive element signals can also be included.

Abstract: A tunneling magnetoresistive stack includes a first ferromagnetic layer, a tunnel barrier layer on the first ferromagnetic layer, and a second ferromagnetic layer on the tunnel barrier layer. The tunneling magnetoresistive stack exhibits a negative exchange coupling between the first ferromagnetic layer and the second ferromagnetic layer indicating that the tunneling magnetoresistive stack has a high quality tunnel barrier layer.

Abstract: A transducing head has a magnetoresistive sensor, a first bias element, and a second bias element. The magnetoresistive sensor is positioned between the first and second bias elements, and has a sensor width. The first bias element has a first length and the second bias element has a second length. The direction of the first and second lengths are substantially similar to the direction of the sensor width. The first and second lengths in the range of about one-tenth to about twenty times the sensor width.

Abstract: A transducing head has a magnetoresistive sensor, a first bias element, and a second bias element. The magnetoresistive sensor is positioned between the first and second bias elements, and has a sensor width. The first bias element has a first length and the second bias element has a second length. The direction of the first and second lengths are substantially similar to the direction of the sensor width. The first and second lengths in the range of about one-tenth to about twenty times the sensor width.

Abstract: A method of etching a structure including a magnetic material, the method includes providing a structure including a magnetic material, applying a mask material to at least a portion of the structure, and reactive ion beam etching the magnetic material using an etch process including a carbon based compound, wherein the mask material forms a material which etches slower than the magnetic material. The etch process can further include argon ions. The carbon based compound can be a compound selected from the group of C2H2, CHF3, and CO2. The etch process can alternatively include argon ions, oxygen and either C2H2 or CHF3. The magnetic material can comprise a compound including a material selected from the group of Fe, Ni, and Co. The mask material can comprise a layer of Ta, W, Mo, Si, Ti or a photoresist. Magnetic heads made using the process, and disc drives including such magnetic heads are also included.