Patents by Inventor Erica L. Poelstra

Erica L. Poelstra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200111797
    Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.
    Type: Application
    Filed: October 3, 2018
    Publication date: April 9, 2020
    Applicant: Micron Technology, Inc.
    Inventors: Hong Li, Ramaswamy Ishwar Venkatanarayanan, Sanh D. Tang, Erica L. Poelstra
  • Publication number: 20200052113
    Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.
    Type: Application
    Filed: October 8, 2019
    Publication date: February 13, 2020
    Applicant: Micron Technology, Inc.
    Inventors: Sanh D. Tang, Hong Li, Erica L. Poelstra
  • Patent number: 10461185
    Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: October 29, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Sanh D. Tang, Hong Li, Erica L. Poelstra
  • Publication number: 20190198668
    Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.
    Type: Application
    Filed: May 10, 2018
    Publication date: June 27, 2019
    Applicant: Micron Technology, Inc.
    Inventors: Sanh D. Tang, Hong Li, Erica L. Poelstra