Abstract: A private networked database system utilizing mobile devices offers centralized access, reconciliation, and sharing of data, for example consumer immunization information. The system provides technical features not previously available, including bidirectional data transmission and replication across government-controlled databases located in multiple states.

Abstract: A private networked database system utilizing mobile devices offers centralized access, reconciliation, and sharing of data, for example consumer immunization information. The system provides technical features not previously available, including bidirectional data transmission and replication across government-controlled databases located in multiple states.

Abstract: A private networked database system utilizing mobile devices offers centralized access, reconciliation, and sharing of data, for example consumer immunization information. The system provides technical features not previously available, including bidirectional data transmission and replication across government-controlled databases located in multiple states.

Abstract: A health records management system provides centralized access to and sharing of certain medical information, for example immunization information. Consumers may utilize the system to manage immunization information for a household, and to update state immunization registry information. The health records management system may provide immunization reminders to a consumer.

Abstract: A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.

Abstract: A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.

Abstract: An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the <110> direction of the single silicon crystal is tilted away by the angle ? from the normal to the wafer surface and the projection of the tilted <110> direction forms an angle ? with the direction <?110> in the wafer, and ? is given by 0???3° and 45°???90°, as well as for all symmetrically equivalent directions.

Abstract: A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm?3, a cumulative length of linear slippages ?3 cm and a cumulative area of areal slippage regions ?7 cm2, the front surface having <45 nitrogen-induced defects of >0.13 ?m LSE in the DNN channel, a layer at least 5 ?m thick, in which ?1·104 COPs/cm3 with a size of ?0.09 ?m occur, and a BMD-free layer ?5 ?m thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

Abstract: An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the <110> direction of the single silicon crystal is tilted away by the angle ? from the normal to the wafer surface and the projection of the tilted <110> direction forms an angle ? with the direction <?110> in the wafer, and ? is given by 0???3° and 45°???90°, as well as for all symmetrically equivalent directions.

Abstract: A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm?3, a cumulative length of linear slippages ?3 cm and a cumulative area of areal slippage regions ?7 cm2, the front surface having <45 nitrogen-induced defects of >0.13 ?m LSE in the DNN channel, a layer at least 5 ?m thick, in which ?1·104 COPs/cm3 with a size of ?0.09 ?m occur, and a BMD-free layer ?5 ?m thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

Abstract: A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*1016 atcm?3 and greater than 1*1012 atcm?3. A method for producing a semiconductor wafer from silicon includes separating the semiconductor wafer from a silicon single crystal, with the single silicon crystal being pulled from a melt, in the presence of hydrogen, using the Czochralski method. The hydrogen partial pressure during the pulling of the single silicon crystal is less than 3 mbar.

Abstract: A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*1016 atcm−3 and greater than 1*1012 atcm−3. A method for producing a semiconductor wafer from silicon includes separating the semiconductor wafer from a silicon single crystal, with the single silicon crystal being pulled from a melt, in the presence of hydrogen, using the Czochralski method. The hydrogen partial pressure during the pulling of the single silicon crystal is less than 3 mbar.