Abstract: Improving performance in solid state devices (SSDs) by controlling or throttling the depth of the request queue. In one implementation, a method includes monitoring a request queue in a solid state device (an SSD), the request queue comprising a first request and a second request having an actual time interval therebetween, determining a number of active memory dies of the SSD, determining a target interval based on the number of active memory dies and a target number of active memory dies, and responsive to the actual time interval being less than the target interval, delaying acting on the second request until after the target interval.

Abstract: Hard errors are determined for an unsuccessful decoding of codeword bits read from NAND memory cells via a read channel and input to a low-density parity check (LDPC) decoder. A bit error rate (BER) for the hard errors is estimated and BER for the read channel is estimated. Hard error regions are found using a single level cell (SLC) reading of the NAND memory cells. A log likelihood ratio (LLR) mapping of the codeword bits input to the LDPC decoder is changed based on the hard error regions, the hard error BER, and/or the read channel BER.

Abstract: Systems and methods presented herein provide for mitigating errors in a storage device. In one embodiment, a storage system includes a storage device comprising a plurality of storage areas operable to store data, and a controller operable to evaluate operating conditions of the storage device, to perform a background scan on a first of the storage areas to characterize a read retention of the first storage area, and to adjust a read signal of the first storage area based on the characterized read retention and the operating conditions of the storage device.

Abstract: Systems and methods presented herein provide for testing degradation in a storage device. In one embodiment, a storage controller is operable to test individual portions of a first of the plurality of storage areas of the storage device by: analyzing individual portions of the first storage area; determining that one or more of the individual portions of the first storage area have failed; and retire the failed one or more portions of the first storage area. The storage controller is further operable to write to the first storage area using an error correction code (ECC), and to test the remaining portions of the first storage area to determine whether the first storage area should be retired in response to writing to the first storage area.

Abstract: Improving performance in solid state devices (SSDs) by controlling or throttling the depth of the request queue. In one implementation, a method includes monitoring a request queue in a solid state device (an SSD), the request queue comprising a first request and a second request having an actual time interval therebetween, determining a number of active memory dies of the SSD, determining a target interval based on the number of active memory dies and a target number of active memory dies, and responsive to the actual time interval being less than the target interval, delaying acting on the second request until after the target interval.

Abstract: Improving performance in solid state devices (SSDs) by controlling or throttling the depth of the request queue. In one implementation, a method includes monitoring a request queue in a solid state device (an SSD), the request queue comprising a first request and a second request having an actual time interval therebetween, determining a number of active memory dies of the SSD, determining a target interval based on the number of active memory dies and a target number of active memory dies, and responsive to the actual time interval being less than the target interval, delaying acting on the second request until after the target interval.

Abstract: Hard errors are determined for an unsuccessful decoding of codeword bits read from NAND memory cells via a read channel and input to a low-density parity check (LDPC) decoder. A bit error rate (BER) for the hard errors is estimated and BER for the read channel is estimated. Hard error regions are found using a single level cell (SLC) reading of the NAND memory cells. A log likelihood ratio (LLR) mapping of the codeword bits input to the LDPC decoder is changed based on the hard error regions, the hard error BER, and/or the read channel BER.

Abstract: Improving performance in solid state devices (SSDs) by controlling or throttling the depth of the request queue. In one implementation, a method includes monitoring a request queue in a solid state device (an SSD), the request queue comprising a first request and a second request having an actual time interval therebetween, determining a queue depth for the request queue, determining a target interval based on the queue depth and a target queue depth, and responsive to the actual time interval being less than the target interval, delaying acting on the second request until after the target interval.

Abstract: Systems, methods and computer-readable memory for garbage collection in a storage device. One method comprises, upon a write of data to a first garbage collection unit (GCU) of the storage device, incrementing a number of logical mapping units stored in the first GCU along with a number of logical mapping units with valid data stored in the first GCU. A number of logical mapping units with invalid data stored in a second GCU is decremented based on the incremented number of logical mapping units with valid data stored in the first GCU. The second GCU is erased when a valid data rate of the second GCU is below a valid data rate of the first GCU.

Abstract: Improving performance in solid state devices (SSDs) by controlling or throttling the depth of the request queue. In one implementation, a method includes monitoring a request queue in a solid state device (an SSD), the request queue comprising a first request and a second request having an actual time interval therebetween, determining a number of active memory dies of the SSD, determining a target interval based on the number of active memory dies and a target number of active memory dies, and responsive to the actual time interval being less than the target interval, delaying acting on the second request until after the target interval.

Abstract: Improving performance in solid state devices (SSDs) by controlling or throttling an interval between requests. In one implementation, a method includes monitoring a request queue in a solid state device (an SSD), the request queue comprising a first request and a second request having an actual time interval therebetween, and responsive to the time interval being less than a target interval, delaying acting on the second request until after the target interval.

Abstract: Improving performance in solid state devices (SSDs) by controlling or throttling the depth of the request queue. In one implementation, a method includes monitoring a request queue in a solid state device (an SSD), the request queue comprising a first request and a second request having an actual time interval therebetween, determining a queue depth for the request queue, determining a target interval based on the queue depth and a target queue depth, and responsive to the actual time interval being less than the target interval, delaying acting on the second request until after the target interval.

Abstract: Hard errors are determined for an unsuccessful decoding of codeword bits read from NAND memory cells via a read channel and input to a low-density parity check (LDPC) decoder. A bit error rate (BER) for the hard errors is estimated and BER for the read channel is estimated. Hard error regions are found using a single level cell (SLC) reading of the NAND memory cells. A log likelihood ratio (LLR) mapping of the codeword bits input to the LDPC decoder is changed based on the hard error regions, the hard error BER, and/or the read channel BER.

Abstract: Systems, devices, and methods are presented that allow a data channel to adaptively vary a change in a reference voltage used to read data from a solid state memory. The change in the reference voltage may be determined based on a measured error statistic of the solid state memory. A hard decision low density parity check (HLDPC) decoder may be utilized in conjunction with a soft decision low density parity check (SLDPC).

Abstract: A method includes determining a portion of a block of a storage device to read after programming, and reading the portion of the block and determining a maximum error count for the portion of the block. The maximum error count is compared to a threshold. When the maximum error count exceeds the threshold, a code rate of an error correction coding used to program the block is adjusted, or a code rate test is performed on the entire block.

Abstract: A method includes programming data in a block of a storage device, and reading back the programmed data and determining a maximum error count for the block. A code rate index that satisfies correction of the maximum error count for the block is determined. A current code rate index is adjusted to the code rate index that satisfies correction of the maximum error count for the block.

Abstract: A device may include a SSD having multiple storage units and a deduplication control circuit configured to determine whether selected data content to be stored is a duplicate of previous data content already in a first buffer of data buffered to be stored in a set of storage units. The deduplication circuit may be further configured to, based on a determination that the selected data content is a duplicate of first previous data content already buffered in the first buffer, instead of buffering another copy of the selected data content, buffer a first header including a first pointer that associates the first header with the first previous data content already buffered in the first buffer. The deduplication circuit may also be configured to reorder the first buffer such that individual data contents in the first buffer are grouped near headers associated with the individual data contents.

Abstract: Systems and methods presented herein provide for mitigating errors in a storage device. In one embodiment, a storage system includes a storage device comprising a plurality of storage areas operable to store data, and a controller operable to evaluate operating conditions of the storage device, to perform a background scan on a first of the storage areas to characterize a read retention of the first storage area, and to adjust a read signal of the first storage area based on the characterized read retention and the operating conditions of the storage device.

Abstract: A method includes determining a portion of a block of a storage device to read after programming, and reading the portion of the block and determining a maximum error count for the portion of the block. The maximum error count is compared to a threshold. When the maximum error count exceeds the threshold, a code rate of an error correction coding used to program the block is adjusted, or a code rate test is performed on the entire block.

Abstract: A method includes programming data in a block of a storage device, and reading back the programmed data and determining a maximum error count for the block. A code rate index that satisfies correction of the maximum error count for the block is determined. A current code rate index is adjusted to the code rate index that satisfies correction of the maximum error count for the block.